Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
25232 | 239 | 14.2 | 50% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
2900 | 2299 | PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | WET OZONE | Author keyword | 14 | 100% | 3% | 7 |
2 | PHOTORESIST REMOVAL | Author keyword | 11 | 60% | 5% | 12 |
3 | RESIST REMOVAL | Author keyword | 5 | 47% | 3% | 8 |
4 | HOT WIRE CATALYZER | Author keyword | 4 | 75% | 1% | 3 |
5 | ION IMPLANTED RESIST | Author keyword | 4 | 75% | 1% | 3 |
6 | SEMICONDUCTOR CLEANING | Author keyword | 3 | 100% | 1% | 3 |
7 | INTEGRATED TECHNOL SYST | Address | 3 | 20% | 5% | 13 |
8 | SAICAS | Author keyword | 3 | 60% | 1% | 3 |
9 | OXIDE LOSS | Author keyword | 2 | 67% | 1% | 2 |
10 | T PJT MEMORY DEVICE SOLUT NETWORK | Address | 2 | 67% | 1% | 2 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | WET OZONE | 14 | 100% | 3% | 7 | Search WET+OZONE | Search WET+OZONE |
2 | PHOTORESIST REMOVAL | 11 | 60% | 5% | 12 | Search PHOTORESIST+REMOVAL | Search PHOTORESIST+REMOVAL |
3 | RESIST REMOVAL | 5 | 47% | 3% | 8 | Search RESIST+REMOVAL | Search RESIST+REMOVAL |
4 | HOT WIRE CATALYZER | 4 | 75% | 1% | 3 | Search HOT+WIRE+CATALYZER | Search HOT+WIRE+CATALYZER |
5 | ION IMPLANTED RESIST | 4 | 75% | 1% | 3 | Search ION+IMPLANTED+RESIST | Search ION+IMPLANTED+RESIST |
6 | SEMICONDUCTOR CLEANING | 3 | 100% | 1% | 3 | Search SEMICONDUCTOR+CLEANING | Search SEMICONDUCTOR+CLEANING |
7 | SAICAS | 3 | 60% | 1% | 3 | Search SAICAS | Search SAICAS |
8 | OXIDE LOSS | 2 | 67% | 1% | 2 | Search OXIDE+LOSS | Search OXIDE+LOSS |
9 | NOVOLAK RESIST | 1 | 38% | 1% | 3 | Search NOVOLAK+RESIST | Search NOVOLAK+RESIST |
10 | ATOMIC HYDROGEN ANNEAL | 1 | 100% | 1% | 2 | Search ATOMIC+HYDROGEN+ANNEAL | Search ATOMIC+HYDROGEN+ANNEAL |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | RESIST REMOVAL | 23 | 100% | 4% | 10 |
2 | HEATED CATALYZER | 17 | 72% | 5% | 13 |
3 | WET OZONE | 8 | 100% | 2% | 5 |
4 | PHOTORESIST REMOVAL | 3 | 43% | 3% | 6 |
5 | IMPLANTED PHOTORESIST | 2 | 67% | 1% | 2 |
6 | PHOTO RESIST | 2 | 50% | 1% | 3 |
7 | HEATED TUNGSTEN | 1 | 100% | 1% | 2 |
8 | ION IMPLANTED PHOTORESIST | 1 | 100% | 1% | 2 |
9 | ION IMPLANTED RESIST | 1 | 100% | 1% | 2 |
10 | CLEANING SYSTEM | 1 | 50% | 0% | 1 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Development of an Environmentally Friendly Resist-Removal Process Using Wet Ozone | 2012 | 0 | 24 | 75% |
The chemistry of the semiconductor industry | 1996 | 8 | 11 | 18% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | INTEGRATED TECHNOL SYST | 3 | 20% | 5.4% | 13 |
2 | T PJT MEMORY DEVICE SOLUT NETWORK | 2 | 67% | 0.8% | 2 |
3 | UCT S | 1 | 100% | 0.8% | 2 |
4 | PROC ENGN 5 | 1 | 40% | 0.8% | 2 |
5 | BIONANO TECHNOL MAT SCI ENGN | 1 | 50% | 0.4% | 1 |
6 | CHEM PHYS ANALYT CHEM | 1 | 50% | 0.4% | 1 |
7 | MKS RUMENTS | 1 | 50% | 0.4% | 1 |
8 | TOKYO SALES OFF | 1 | 50% | 0.4% | 1 |
9 | MICROWAVE MIXED SIGNAL TECHNOL | 0 | 33% | 0.4% | 1 |
10 | PLASMA PROC C2P | 0 | 33% | 0.4% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000209317 | CLEANROOM//FAN FILTER UNIT//ORGANIC CONTAMINATION |
2 | 0.0000141421 | HYDROGEN TERMINATION//SHIZUOKA TORY//LAYER BY LAYER OXIDATION |
3 | 0.0000085130 | MICRO WETTABILITY//MACRO WETTING//MICRO CONTAMINANT |
4 | 0.0000081358 | EXPANDED CORE FIBER//FINE WIRING//H2 REDUCTION |
5 | 0.0000080045 | SPRAY ETCHING//ETCH FACTOR//ETCHING FACTOR |
6 | 0.0000077154 | CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION |
7 | 0.0000069761 | CATALYTIC OZONATION//OZONE-SCIENCE & ENGINEERING//OZONATION |
8 | 0.0000064294 | BILEVEL STRUCTURE//PLASMA BLANKING//WT ADDITIVITY |
9 | 0.0000055923 | ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING |
10 | 0.0000051832 | HIGH PRESSURE PHASE BEHAVIOR//CHEM VENABLE KENAN S//SUPERCRITICAL FLUID SOLVENTS |