Class information for:
Level 1: WET OZONE//PHOTORESIST REMOVAL//RESIST REMOVAL

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
25232 239 14.2 50%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
2900 2299 PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 WET OZONE Author keyword 14 100% 3% 7
2 PHOTORESIST REMOVAL Author keyword 11 60% 5% 12
3 RESIST REMOVAL Author keyword 5 47% 3% 8
4 HOT WIRE CATALYZER Author keyword 4 75% 1% 3
5 ION IMPLANTED RESIST Author keyword 4 75% 1% 3
6 SEMICONDUCTOR CLEANING Author keyword 3 100% 1% 3
7 INTEGRATED TECHNOL SYST Address 3 20% 5% 13
8 SAICAS Author keyword 3 60% 1% 3
9 OXIDE LOSS Author keyword 2 67% 1% 2
10 T PJT MEMORY DEVICE SOLUT NETWORK Address 2 67% 1% 2

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 WET OZONE 14 100% 3% 7 Search WET+OZONE Search WET+OZONE
2 PHOTORESIST REMOVAL 11 60% 5% 12 Search PHOTORESIST+REMOVAL Search PHOTORESIST+REMOVAL
3 RESIST REMOVAL 5 47% 3% 8 Search RESIST+REMOVAL Search RESIST+REMOVAL
4 HOT WIRE CATALYZER 4 75% 1% 3 Search HOT+WIRE+CATALYZER Search HOT+WIRE+CATALYZER
5 ION IMPLANTED RESIST 4 75% 1% 3 Search ION+IMPLANTED+RESIST Search ION+IMPLANTED+RESIST
6 SEMICONDUCTOR CLEANING 3 100% 1% 3 Search SEMICONDUCTOR+CLEANING Search SEMICONDUCTOR+CLEANING
7 SAICAS 3 60% 1% 3 Search SAICAS Search SAICAS
8 OXIDE LOSS 2 67% 1% 2 Search OXIDE+LOSS Search OXIDE+LOSS
9 NOVOLAK RESIST 1 38% 1% 3 Search NOVOLAK+RESIST Search NOVOLAK+RESIST
10 ATOMIC HYDROGEN ANNEAL 1 100% 1% 2 Search ATOMIC+HYDROGEN+ANNEAL Search ATOMIC+HYDROGEN+ANNEAL

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 RESIST REMOVAL 23 100% 4% 10
2 HEATED CATALYZER 17 72% 5% 13
3 WET OZONE 8 100% 2% 5
4 PHOTORESIST REMOVAL 3 43% 3% 6
5 IMPLANTED PHOTORESIST 2 67% 1% 2
6 PHOTO RESIST 2 50% 1% 3
7 HEATED TUNGSTEN 1 100% 1% 2
8 ION IMPLANTED PHOTORESIST 1 100% 1% 2
9 ION IMPLANTED RESIST 1 100% 1% 2
10 CLEANING SYSTEM 1 50% 0% 1

Journals

Reviews



Title Publ. year Cit. Active
references
% act. ref.
to same field
Development of an Environmentally Friendly Resist-Removal Process Using Wet Ozone 2012 0 24 75%
The chemistry of the semiconductor industry 1996 8 11 18%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 INTEGRATED TECHNOL SYST 3 20% 5.4% 13
2 T PJT MEMORY DEVICE SOLUT NETWORK 2 67% 0.8% 2
3 UCT S 1 100% 0.8% 2
4 PROC ENGN 5 1 40% 0.8% 2
5 BIONANO TECHNOL MAT SCI ENGN 1 50% 0.4% 1
6 CHEM PHYS ANALYT CHEM 1 50% 0.4% 1
7 MKS RUMENTS 1 50% 0.4% 1
8 TOKYO SALES OFF 1 50% 0.4% 1
9 MICROWAVE MIXED SIGNAL TECHNOL 0 33% 0.4% 1
10 PLASMA PROC C2P 0 33% 0.4% 1

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000209317 CLEANROOM//FAN FILTER UNIT//ORGANIC CONTAMINATION
2 0.0000141421 HYDROGEN TERMINATION//SHIZUOKA TORY//LAYER BY LAYER OXIDATION
3 0.0000085130 MICRO WETTABILITY//MACRO WETTING//MICRO CONTAMINANT
4 0.0000081358 EXPANDED CORE FIBER//FINE WIRING//H2 REDUCTION
5 0.0000080045 SPRAY ETCHING//ETCH FACTOR//ETCHING FACTOR
6 0.0000077154 CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION
7 0.0000069761 CATALYTIC OZONATION//OZONE-SCIENCE & ENGINEERING//OZONATION
8 0.0000064294 BILEVEL STRUCTURE//PLASMA BLANKING//WT ADDITIVITY
9 0.0000055923 ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING
10 0.0000051832 HIGH PRESSURE PHASE BEHAVIOR//CHEM VENABLE KENAN S//SUPERCRITICAL FLUID SOLVENTS