Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
25008 | 245 | 14.2 | 24% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
913 | 10550 | EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | DOT IN A WELL STRUCTURES | Author keyword | 1 | 50% | 0% | 1 |
2 | EXCITATION POWER DEPENDENCES | Author keyword | 1 | 50% | 0% | 1 |
3 | RECOMBINATION BARRIER | Author keyword | 1 | 50% | 0% | 1 |
4 | SPECIAL TECHNOL DESIGN OFF | Address | 1 | 50% | 0% | 1 |
5 | LO PHONON PLASMON COUPLED MODES | Author keyword | 0 | 33% | 0% | 1 |
6 | SEMICOND DEVICES PHYS | Address | 0 | 10% | 0% | 1 |
7 | ALGAAS DIODES | Author keyword | 0 | 100% | 0% | 1 |
8 | ALGAASSI | Author keyword | 0 | 100% | 0% | 1 |
9 | HEAVILY DOPED N GAAS | Author keyword | 0 | 100% | 0% | 1 |
10 | P DEGREES REGION | Author keyword | 0 | 100% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | DOT IN A WELL STRUCTURES | 1 | 50% | 0% | 1 | Search DOT+IN+A+WELL+STRUCTURES | Search DOT+IN+A+WELL+STRUCTURES |
2 | EXCITATION POWER DEPENDENCES | 1 | 50% | 0% | 1 | Search EXCITATION+POWER+DEPENDENCES | Search EXCITATION+POWER+DEPENDENCES |
3 | RECOMBINATION BARRIER | 1 | 50% | 0% | 1 | Search RECOMBINATION+BARRIER | Search RECOMBINATION+BARRIER |
4 | LO PHONON PLASMON COUPLED MODES | 0 | 33% | 0% | 1 | Search LO+PHONON+PLASMON+COUPLED+MODES | Search LO+PHONON+PLASMON+COUPLED+MODES |
5 | ALGAAS DIODES | 0 | 100% | 0% | 1 | Search ALGAAS+DIODES | Search ALGAAS+DIODES |
6 | ALGAASSI | 0 | 100% | 0% | 1 | Search ALGAASSI | Search ALGAASSI |
7 | HEAVILY DOPED N GAAS | 0 | 100% | 0% | 1 | Search HEAVILY+DOPED+N+GAAS | Search HEAVILY+DOPED+N+GAAS |
8 | P DEGREES REGION | 0 | 100% | 0% | 1 | Search P+DEGREES+REGION | Search P+DEGREES+REGION |
9 | SINGLE STEP LPE | 0 | 100% | 0% | 1 | Search SINGLE+STEP+LPE | Search SINGLE+STEP+LPE |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | 2 ROOTS MODEL | 1 | 100% | 1% | 2 |
2 | DOPANT INTERACTIONS | 1 | 29% | 1% | 2 |
3 | INP SINGLE CRYSTALS | 0 | 13% | 1% | 2 |
4 | P TYPE DOPANT | 0 | 20% | 0% | 1 |
5 | VIRTUAL ENTHALPIES | 0 | 11% | 1% | 2 |
6 | WURTZITE TYPE SEMICONDUCTORS | 0 | 11% | 1% | 2 |
7 | ENHANCED TRANSFORMATION | 0 | 11% | 0% | 1 |
8 | CHELATE ORGANOMETALLIC COMPOUNDS | 0 | 100% | 0% | 1 |
9 | POINT DEFECT CONCENTRATION | 0 | 100% | 0% | 1 |
10 | PRECISION DENSITY | 0 | 100% | 0% | 1 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III-V semiconductors | 2010 | 9 | 69 | 10% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SPECIAL TECHNOL DESIGN OFF | 1 | 50% | 0.4% | 1 |
2 | SEMICOND DEVICES PHYS | 0 | 10% | 0.4% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000125329 | MAGNET SENSOR//GROUP III V EXCEPT NITRIDES//COPPER VACANCY COMPLEX |
2 | 0.0000101812 | SURFACE AND INTERFACE PHENOMENA//TELECOMMUN ADVANCEMENTS ORG//SENDAI |
3 | 0.0000097244 | SYMPLECTIC ORTHOGONALITY//CYLINDRICAL ANISOTROPY//STATE SPACE FORMALISM |
4 | 0.0000096582 | ZNOLI FILMS//AUTOEMISSION//HOPPING AND DRIFT MECHANISMS |
5 | 0.0000091090 | EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE |
6 | 0.0000073867 | FE DOPED INP//PHOSPHORUS VAPOR PRESSURE//WAFER ANNEALING |
7 | 0.0000072436 | TYPE304 STAINLESS STEEL//INDIUM OXIDE CERAMICS//HYDROCHLORIC ACID REGENERATION |
8 | 0.0000070465 | OVAL DEFECTS//SEEIE//GA AS BI SOLUTION |
9 | 0.0000069634 | GASB//GALLIUM ANTIMONIDE//GAINASSB |
10 | 0.0000064616 | AL SB//ALSB//BILAYER MIXING |