Class information for:
Level 1: TRIMETHYLINDIUM//CHEMICAL BEAM EPITAXY CBE//MOLECULAR LAYER EPITAXY

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
2435 2176 19.9 63%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
260 18934 GAAS ON SI//GAAS SI//GAINP

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 TRIMETHYLINDIUM Author keyword 16 58% 1% 18
2 CHEMICAL BEAM EPITAXY CBE Author keyword 9 64% 0% 9
3 MOLECULAR LAYER EPITAXY Author keyword 8 62% 0% 8
4 TERTIARYBUTYLPHOSPHINE Author keyword 6 48% 0% 10
5 OMVPE IL Address 6 80% 0% 4
6 MOLECULAR LAYER EPITAXY MLE Author keyword 6 100% 0% 4
7 METALORGANICS Author keyword 5 54% 0% 7
8 TRIMETHYLGALLIUM Author keyword 5 28% 1% 14
9 MOMBE Author keyword 4 18% 1% 21
10 NITROGEN CARRIER GAS Author keyword 4 75% 0% 3

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 TRIMETHYLINDIUM 16 58% 1% 18 Search TRIMETHYLINDIUM Search TRIMETHYLINDIUM
2 CHEMICAL BEAM EPITAXY CBE 9 64% 0% 9 Search CHEMICAL+BEAM+EPITAXY+CBE Search CHEMICAL+BEAM+EPITAXY+CBE
3 MOLECULAR LAYER EPITAXY 8 62% 0% 8 Search MOLECULAR+LAYER+EPITAXY Search MOLECULAR+LAYER+EPITAXY
4 TERTIARYBUTYLPHOSPHINE 6 48% 0% 10 Search TERTIARYBUTYLPHOSPHINE Search TERTIARYBUTYLPHOSPHINE
5 MOLECULAR LAYER EPITAXY MLE 6 100% 0% 4 Search MOLECULAR+LAYER+EPITAXY+MLE Search MOLECULAR+LAYER+EPITAXY+MLE
6 METALORGANICS 5 54% 0% 7 Search METALORGANICS Search METALORGANICS
7 TRIMETHYLGALLIUM 5 28% 1% 14 Search TRIMETHYLGALLIUM Search TRIMETHYLGALLIUM
8 MOMBE 4 18% 1% 21 Search MOMBE Search MOMBE
9 NITROGEN CARRIER GAS 4 75% 0% 3 Search NITROGEN+CARRIER+GAS Search NITROGEN+CARRIER+GAS
10 ATOMIC LAYER EPITAXY 4 12% 1% 29 Search ATOMIC+LAYER+EPITAXY Search ATOMIC+LAYER+EPITAXY

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 TRIETHYLGALLIUM 87 66% 4% 81
2 TRIMETHYLGALLIUM 67 40% 6% 130
3 TERTIARY BUTYLPHOSPHINE 42 94% 1% 15
4 CBE 41 65% 2% 40
5 ARSINE 35 36% 4% 79
6 TERTIARYBUTYLPHOSPHINE 34 57% 2% 40
7 TERTIARYBUTYLARSINE 32 43% 3% 57
8 MOMBE GROWTH 29 72% 1% 23
9 TERTIARY BUTYLARSINE 29 88% 1% 14
10 MOMBE 28 36% 3% 63

Journals


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 ACTA POLYTECHNICA SCANDINAVICA-CHEMICAL TECHNOLOGY SERIES 1 16% 0% 8

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
METALORGANIC PRECURSORS FOR VAPOR-PHASE EPITAXY 1993 83 151 60%
Developments in metalorganic precursors for semiconductor growth from the vapour phase 1997 36 33 45%
ORGANOMETALLIC PRECURSORS IN THE GROWTH OF EPITAXIAL THIN-FILMS OF GROUPS III-V SEMICONDUCTORS BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION 1991 61 142 68%
Organometallic vapor phase epitaxy (OMVPE) 1999 25 55 33%
Fundamental aspects of organometallic vapor phase epitaxy 2001 17 96 39%
COMPOUND SEMICONDUCTOR GROWTH BY METALLORGANIC MOLECULAR-BEAM EPITAXY (MOMBE) 1995 12 106 59%
MECHANISMS OF GAAS ATOMIC LAYER EPITAXY - A REVIEW OF PROGRESS 1994 13 46 76%
ORGANOMETALLIC MOLECULAR PRECURSORS FOR LOW-TEMPERATURE MOCVD OF III-V SEMICONDUCTORS 1991 27 45 89%
Role of surface chemistry in semiconductor thin film processing 1996 53 168 16%
ATOMIC LAYER EPITAXY OF III-V COMPOUNDS USING METALORGANIC AND HYDRIDE SOURCES 1992 23 92 78%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 OMVPE IL 6 80% 0.2% 4
2 SENDAI 3 19% 0.6% 12
3 ENGN MECHATRON PRECIS ENGN 1 100% 0.1% 2
4 SHIPLEY METALORGAN 1 100% 0.1% 2
5 TELECOMMUN ADVANCEMENT ORG J AN 1 33% 0.1% 3
6 TELECOMMUN ADV ORG J AN 1 40% 0.1% 2
7 35 TECHNOL 1 50% 0.0% 1
8 CHEM BIOCHEM MAT CHEM 1 50% 0.0% 1
9 DFALPD 1 50% 0.0% 1
10 ELECT SEMICOND 1 50% 0.0% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000221170 CARBON DOPING//CBR4//C DOPED GAAS
2 0.0000193059 ING ELECT SEES//SECC PUEBLA//ALLOY SOURCE
3 0.0000182915 SELECTIVE AREA GROWTH//TERTIARYBUTYLCHLORIDE//SELECTIVE EPITAXY
4 0.0000174144 DIMETHYLZINC ADDUCTS//MOCVD METAL ORGANIC CHEMICAL VAPOR DEPOSITION//PHASE RULES
5 0.0000154280 INASP INP//INASP//QUANTUM PHOTOVOLTA GRP
6 0.0000147232 PARASITIC REACTION//CVD REACTOR//MOCVD REACTOR
7 0.0000125098 OVAL DEFECTS//SEEIE//GA AS BI SOLUTION
8 0.0000092440 SURFACE PHOTOABSORPTION//REFLECTANCE ANISOTROPY SPECTROSCOPY//REFLECTION ANISOTROPY SPECTROSCOPY
9 0.0000081021 LUMILEDS LIGHTING//ZINC DIFFUSION//ACCEPTOR DIFFUSION
10 0.0000076778 ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS