Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
2434 | 2176 | 28.1 | 66% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SERIES RESISTANCE | Author keyword | 81 | 35% | 9% | 185 |
2 | BARRIER INHOMOGENEITY | Author keyword | 72 | 91% | 1% | 30 |
3 | IDEALITY FACTOR | Author keyword | 56 | 40% | 5% | 110 |
4 | BARRIER HEIGHT | Author keyword | 51 | 31% | 6% | 136 |
5 | BARRIER HEIGHT INHOMOGENEITY | Author keyword | 44 | 100% | 1% | 16 |
6 | VOCAT MED SCI | Address | 31 | 82% | 1% | 18 |
7 | BARRIER INHOMOGENEITIES | Author keyword | 29 | 72% | 1% | 23 |
8 | ORGANIC INORGANIC SEMICONDUCTOR CONTACT | Author keyword | 27 | 92% | 1% | 11 |
9 | SCHOTTKY DIODE | Author keyword | 27 | 17% | 7% | 144 |
10 | MIS SCHOTTKY DIODES | Author keyword | 26 | 100% | 1% | 11 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SERIES RESISTANCE | 81 | 35% | 9% | 185 | Search SERIES+RESISTANCE | Search SERIES+RESISTANCE |
2 | BARRIER INHOMOGENEITY | 72 | 91% | 1% | 30 | Search BARRIER+INHOMOGENEITY | Search BARRIER+INHOMOGENEITY |
3 | IDEALITY FACTOR | 56 | 40% | 5% | 110 | Search IDEALITY+FACTOR | Search IDEALITY+FACTOR |
4 | BARRIER HEIGHT | 51 | 31% | 6% | 136 | Search BARRIER+HEIGHT | Search BARRIER+HEIGHT |
5 | BARRIER HEIGHT INHOMOGENEITY | 44 | 100% | 1% | 16 | Search BARRIER+HEIGHT+INHOMOGENEITY | Search BARRIER+HEIGHT+INHOMOGENEITY |
6 | BARRIER INHOMOGENEITIES | 29 | 72% | 1% | 23 | Search BARRIER+INHOMOGENEITIES | Search BARRIER+INHOMOGENEITIES |
7 | ORGANIC INORGANIC SEMICONDUCTOR CONTACT | 27 | 92% | 1% | 11 | Search ORGANIC+INORGANIC+SEMICONDUCTOR+CONTACT | Search ORGANIC+INORGANIC+SEMICONDUCTOR+CONTACT |
8 | SCHOTTKY DIODE | 27 | 17% | 7% | 144 | Search SCHOTTKY+DIODE | Search SCHOTTKY+DIODE |
9 | MIS SCHOTTKY DIODES | 26 | 100% | 1% | 11 | Search MIS+SCHOTTKY+DIODES | Search MIS+SCHOTTKY+DIODES |
10 | INSULATOR LAYER | 23 | 74% | 1% | 17 | Search INSULATOR+LAYER | Search INSULATOR+LAYER |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | I V | 150 | 80% | 4% | 94 |
2 | C V CHARACTERISTICS | 141 | 81% | 4% | 85 |
3 | SERIES RESISTANCE | 137 | 42% | 12% | 251 |
4 | SCHOTTKY BARRIER DIODES | 121 | 52% | 8% | 164 |
5 | IDEALITY FACTORS | 118 | 95% | 2% | 39 |
6 | CONDUCTANCE TECHNIQUE | 107 | 93% | 2% | 40 |
7 | EXCESS CAPACITANCE | 90 | 88% | 2% | 43 |
8 | CAPACITANCE VOLTAGE CHARACTERISTICS | 89 | 62% | 4% | 91 |
9 | CURRENT VOLTAGE CHARACTERISTICS | 79 | 23% | 14% | 306 |
10 | INTERSECTING BEHAVIOR | 72 | 91% | 1% | 30 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
The physics and chemistry of the Schottky barrier height | 2014 | 54 | 353 | 12% |
Embedded Nanoparticles in Schottky and Ohmic Contacts: A Review | 2015 | 1 | 72 | 32% |
Recent advances in Schottky barrier concepts | 2001 | 525 | 343 | 20% |
The barrier height inhornogeneity in Al/p-Si Schottky barrier diodes with native insulator layer | 2006 | 41 | 23 | 96% |
Hydrostatic pressure dependence of interface state density of Cd/n-type GaAs Schottky barrier diodes | 2010 | 13 | 19 | 84% |
Electrical and photoconductivity properties of p-Si/P3HT/Al and p-Si/P3HT:MEH-PPV/Al organic devices: Comparison study | 2012 | 12 | 153 | 38% |
Evaluation of the hydrostatic pressure effect on Mn/p-Si Schottky barrier diode electrical parameters and interface states | 2012 | 4 | 45 | 73% |
Study and modeling of the transport mechanism in a semi insulating GaAs Schottky diode | 2012 | 0 | 14 | 100% |
Review and test of methods for determination of the Schottky diode parameters | 2015 | 0 | 39 | 72% |
Electrical properties of gallium arsenide surfaces and interfaces treated by Ru(3+) ions | 2009 | 1 | 7 | 71% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | VOCAT MED SCI | 31 | 82% | 0.8% | 18 |
2 | OPTICIANRY | 26 | 80% | 0.7% | 16 |
3 | NUCL ELECT RUMENTAT | 14 | 100% | 0.3% | 7 |
4 | YSR ENGN | 8 | 75% | 0.3% | 6 |
5 | MADEN HIGHER VOCAT | 6 | 53% | 0.4% | 8 |
6 | SEMICOND DISPOSITIFS ELECT | 3 | 57% | 0.2% | 4 |
7 | GRP PESQUISA CIENCIA MAT | 3 | 100% | 0.1% | 3 |
8 | MICROELECT PL | 3 | 25% | 0.5% | 11 |
9 | SPRC | 2 | 10% | 0.9% | 20 |
10 | OPTOELECT COMPOSANTS | 2 | 24% | 0.4% | 8 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000159019 | NANOMETER SIZED SCHOTTKY CONTACT//METAL DOT ARRAY//NANO DIODE |
2 | 0.0000103366 | INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM |
3 | 0.0000082031 | DIFFUSION TEMPERATURE//DEVICE FUNCT SECT//TWO DIMENSIONAL DEVICE SIMULATION |
4 | 0.0000077373 | P GAN//OHMIC CONTACT//OHMIC CONTACTS |
5 | 0.0000072288 | OHMIC CONTACT//OHMIC CONTACTS//P TYPE SIC |
6 | 0.0000070018 | LASER MOL BEAM EPITAXY//PTSI//IRIDIUM SILICIDES |
7 | 0.0000068744 | BALLISTIC ELECTRON EMISSION MICROSCOPY//BALLISTIC ELECTRON EMISSION MICROSCOPY BEEM//BEEM |
8 | 0.0000065088 | AB INITIO CLUSTER CALCULATIONS//FINITE FIELD DFT CALCULATION//GAAS111A SURFACE |
9 | 0.0000062185 | EDUC SCANNING PROBE MICROSCOPY//LOBACHEVSKY PHYS TECH//PHOTOELECTRIC SPECTROSCOPY |
10 | 0.0000057887 | SEMICOND INTEGRATED CIRCUIT//SCI TECH FES SAIS//HIGFET |