Class information for:
Level 1: HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
2430 2179 16.0 53%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 HOT CARRIER Author keyword 30 30% 4% 86
2 CHANNEL INITIATED SECONDARY ELECTRON CHISEL Author keyword 24 91% 0% 10
3 HOT CARRIER DEGRADATION Author keyword 17 41% 1% 32
4 CHARGE PUMPING CP Author keyword 16 47% 1% 25
5 HOT CARRIER EFFECT Author keyword 13 38% 1% 26
6 CHARGE PUMPING Author keyword 12 25% 2% 42
7 HOT CARRIER INDUCED DEGRADATION Author keyword 11 60% 1% 12
8 CHANNEL HOT ELECTRON CHE Author keyword 11 69% 0% 9
9 EFFECTIVE CHANNEL LENGTH Author keyword 9 41% 1% 17
10 HOT CARRIERS HCS Author keyword 9 83% 0% 5

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 HOT CARRIER 30 30% 4% 86 Search HOT+CARRIER Search HOT+CARRIER
2 CHANNEL INITIATED SECONDARY ELECTRON CHISEL 24 91% 0% 10 Search CHANNEL+INITIATED+SECONDARY+ELECTRON+CHISEL Search CHANNEL+INITIATED+SECONDARY+ELECTRON+CHISEL
3 HOT CARRIER DEGRADATION 17 41% 1% 32 Search HOT+CARRIER+DEGRADATION Search HOT+CARRIER+DEGRADATION
4 CHARGE PUMPING CP 16 47% 1% 25 Search CHARGE+PUMPING+CP Search CHARGE+PUMPING+CP
5 HOT CARRIER EFFECT 13 38% 1% 26 Search HOT+CARRIER+EFFECT Search HOT+CARRIER+EFFECT
6 CHARGE PUMPING 12 25% 2% 42 Search CHARGE+PUMPING Search CHARGE+PUMPING
7 HOT CARRIER INDUCED DEGRADATION 11 60% 1% 12 Search HOT+CARRIER+INDUCED+DEGRADATION Search HOT+CARRIER+INDUCED+DEGRADATION
8 CHANNEL HOT ELECTRON CHE 11 69% 0% 9 Search CHANNEL+HOT+ELECTRON+CHE Search CHANNEL+HOT+ELECTRON+CHE
9 EFFECTIVE CHANNEL LENGTH 9 41% 1% 17 Search EFFECTIVE+CHANNEL+LENGTH Search EFFECTIVE+CHANNEL+LENGTH
10 HOT CARRIERS HCS 9 83% 0% 5 Search HOT+CARRIERS+HCS Search HOT+CARRIERS+HCS

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 LDD MOSFETS 77 75% 3% 56
2 HOT CARRIER DEGRADATION 54 53% 3% 71
3 DEVICE DEGRADATION 36 60% 2% 40
4 MOSFET DEGRADATION 35 57% 2% 42
5 CHANNEL MOSFETS 33 38% 3% 68
6 INDUCED MOSFET DEGRADATION 27 72% 1% 21
7 EFFECTIVE CHANNEL LENGTH 24 59% 1% 27
8 CHARGE PUMPING TECHNIQUE 21 51% 1% 29
9 DYNAMIC DEGRADATION 18 89% 0% 8
10 LIFETIME PREDICTION METHOD 18 89% 0% 8

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Characterization of total safe operating area of lateral DMOS transistors 2006 37 13 46%
A review of hot-carrier degradation mechanisms in MOSFETs 1996 31 88 74%
UNDERSTANDING HOT-ELECTRON TRANSPORT IN SILICON DEVICES - IS THERE A SHORTCUT 1995 157 75 20%
DRAIN-ENGINEERED HOT-ELECTRON-RESISTANT DEVICE STRUCTURES - A REVIEW 1989 54 8 100%
HOT-CARRIER DEGRADATION IN SUBMICROMETER MOSFETS - FROM UNIFORM INJECTION TOWARDS THE REAL OPERATING-CONDITIONS 1995 25 28 50%
Experimental methods for investigating the defect properties of SiO2 in metal oxide semiconductor transistors 1998 2 32 91%
HOT-CARRIER-RELATED DEVICE RELIABILITY FOR DIGITAL AND ANALOG CMOS CIRCUITS 1995 4 21 95%
Hot-carrier injections in SiO2 1998 9 135 44%
Reliability phenomena under AC stress 1998 12 3 33%
HOT-ELECTRON DEVICE MONITORING AND CHARACTERIZATION - A REVIEW 1988 1 13 69%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 EXPLORATORY DEVICE 6 100% 0.2% 4
2 IUT ROUEN 6 50% 0.4% 8
3 FLORIDA SOLID STATE ELECT 5 55% 0.3% 6
4 PROC DEV IMPLEMENTAT 4 67% 0.2% 4
5 PHYS COMPOSANTS SEMICONDUCTEURS 4 75% 0.1% 3
6 SAGE ENISO 3 100% 0.1% 3
7 CHIP DESIGN RELIABIL 3 40% 0.3% 6
8 ELECT ENGN ADV OPTOELECT 2 67% 0.1% 2
9 CHRISTIAN DOPPLER RELIABIL ISSUES MICROELECT 2 50% 0.1% 3
10 SEMICOND TECHNOL PLICAT GRP 2 26% 0.3% 6

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000208903 CRYOGENIC CMOS//LOW TEMPERATURE ELECTRONICS//LOW TEMPERATURE CIRCUIT
2 0.0000191145 SID4//DEUTERIUM D ANNEALING//TRAP CREATION
3 0.0000181850 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//CHRISTIAN DOPPLER TCAD
4 0.0000167480 NONQUASI STATIC NQS EFFECT//QUCS//RSCE
5 0.0000121439 SIDEWALL OXIDATION//COMPUTAT ELECT//MEMORY DEVICE BUSINESS
6 0.0000119673 STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD
7 0.0000108739 DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS
8 0.0000104208 CARL EMILY FUCHS MICROELECT//CEFIM//EUROPEAN QUAL
9 0.0000079467 SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE BV//LDMOS
10 0.0000074304 OXIDE TRAPPED CHARGE//ELDRS//TOTAL IONIZING DOSE