Class information for:
Level 1: ULTRAHIGH FREQUENCY SEMICOND ELECT//INALAS INGAAS//HIGH ELECTRON MOBILITY TRANSISTORS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
2421 2181 13.6 65%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1771 5849 LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ULTRAHIGH FREQUENCY SEMICOND ELECT Address 36 77% 1% 24
2 INALAS INGAAS Author keyword 18 53% 1% 23
3 HIGH ELECTRON MOBILITY TRANSISTORS Author keyword 15 19% 3% 74
4 METAMORPHIC Author keyword 12 27% 2% 39
5 GATE VOLTAGE SWING Author keyword 11 65% 1% 11
6 T GATE Author keyword 10 39% 1% 20
7 PSEUDOMORPHIC Author keyword 10 48% 1% 15
8 PHEMT Author keyword 9 17% 2% 47
9 DCFET Author keyword 8 100% 0% 5
10 DEVICE LINEARITY Author keyword 8 100% 0% 5

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 INALAS INGAAS 18 53% 1% 23 Search INALAS+INGAAS Search INALAS+INGAAS
2 HIGH ELECTRON MOBILITY TRANSISTORS 15 19% 3% 74 Search HIGH+ELECTRON+MOBILITY+TRANSISTORS Search HIGH+ELECTRON+MOBILITY+TRANSISTORS
3 METAMORPHIC 12 27% 2% 39 Search METAMORPHIC Search METAMORPHIC
4 GATE VOLTAGE SWING 11 65% 1% 11 Search GATE+VOLTAGE+SWING Search GATE+VOLTAGE+SWING
5 T GATE 10 39% 1% 20 Search T+GATE Search T+GATE
6 PSEUDOMORPHIC 10 48% 1% 15 Search PSEUDOMORPHIC Search PSEUDOMORPHIC
7 PHEMT 9 17% 2% 47 Search PHEMT Search PHEMT
8 DCFET 8 100% 0% 5 Search DCFET Search DCFET
9 DEVICE LINEARITY 8 100% 0% 5 Search DEVICE+LINEARITY Search DEVICE+LINEARITY
10 PSEUDOMORPHIC HFET 8 100% 0% 5 Search PSEUDOMORPHIC+HFET Search PSEUDOMORPHIC+HFET

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 HEMTS 70 19% 15% 331
2 DOPED CHANNEL 45 94% 1% 16
3 INALAS INGAAS HEMTS 40 61% 2% 43
4 PSEUDOMORPHIC HEMTS 24 56% 1% 29
5 ELECTRON MOBILITY TRANSISTORS 19 13% 6% 133
6 PHEMT 18 56% 1% 22
7 DRAIN AVALANCHE BREAKDOWN 18 89% 0% 8
8 HEMT 17 23% 3% 66
9 OFF STATE BREAKDOWN 17 70% 1% 14
10 INGAAS CHANNEL 15 82% 0% 9

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
Reliability physics of compound semiconductor transistors for microwave applications 2001 20 53 49%
Hot electron effects and degradation of GaAs and InP HEMTs for microwave and millimetre-wave applications 1998 13 24 88%
ULTRA-HIGH-SPEED MODULATION-DOPED FIELD-EFFECT TRANSISTORS - A TUTORIAL REVIEW 1992 83 37 51%
Nanofabrication by electron beam lithography and its applications: A review 2015 0 87 20%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ULTRAHIGH FREQUENCY SEMICOND ELECT 36 77% 1.1% 24
2 MICROWAVE SEMICOND ELECT 6 47% 0.4% 9
3 MILLIMETER WAVE INNOVAT TECHNOL 5 23% 0.9% 19
4 KANSAI ELECT S 5 34% 0.5% 11
5 MICROWAVE DEVICES TEAM 4 67% 0.2% 4
6 ULTRAFAST SYST GRP 4 75% 0.1% 3
7 SYST ELECT S 3 11% 1.1% 25
8 ULTRA HIGH FREQUENCY SEMICOND ELECT 2 38% 0.2% 5
9 WIRELESS COMMUN DEVICES 2 38% 0.2% 5
10 DEVICES 3 5 2 67% 0.1% 2

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000191063 PSEUDOMORPHIC MODFET//DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTOR DG HEMT//AC MOBILITY
2 0.0000182510 DRAIN CURRENT TRANSIENT//FUNCT ELEMENTS CONTROL SYST//GATE LAG
3 0.0000155659 INALAS INP//INALAS ALLOYS//INALAS ALASSB
4 0.0000094310 LARGE SIGNAL MODEL//NONLINEAR MEASUREMENTS//MESFETS
5 0.0000083334 MISFIT DISLOCATIONS//GRADED BUFFER LAYER//DISLOCATION COMPENSATION
6 0.0000078336 DELTA DOPING//SELF CONSISTENTLY//DELTA DOPED QUANTUM WELLS
7 0.0000072076 ATSUGI ELECT COMMUN S FUNCT DEVICE DEV//INTEGRATED PROD BUSINESS UNIT//SINGLE VOLTAGE SUPPLY
8 0.0000071726 CARL EMILY FUCHS MICROELECT//CEFIM//EUROPEAN QUAL
9 0.0000065250 T R SWITCH//TRANSMIT RECEIVE T R SWITCH//BODY FLOATING
10 0.0000058539 BALLISTIC MOBILITY//HIGH ELECTRIC FIELD TRANSPORT//TRANSIT TIME DELAY