Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
24102 | 271 | 17.6 | 65% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1317 | 8022 | ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//SIO2 ETCHING |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING | Author keyword | 12 | 56% | 6% | 15 |
2 | TI HARD MASK | Author keyword | 6 | 100% | 1% | 4 |
3 | CL 2 BASED PLASMA | Author keyword | 4 | 75% | 1% | 3 |
4 | ETCH PRODUCT | Author keyword | 4 | 75% | 1% | 3 |
5 | CH3OH AR GAS | Author keyword | 2 | 67% | 1% | 2 |
6 | COFEB THIN FILMS | Author keyword | 2 | 67% | 1% | 2 |
7 | DRY ETCHING OF COPPER | Author keyword | 2 | 67% | 1% | 2 |
8 | TIN HARD MASK | Author keyword | 2 | 67% | 1% | 2 |
9 | THIN FILM MICROELECT | Address | 2 | 36% | 1% | 4 |
10 | CH3OH AR | Author keyword | 1 | 100% | 1% | 2 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING | 12 | 56% | 6% | 15 | Search INDUCTIVELY+COUPLED+PLASMA+REACTIVE+ION+ETCHING | Search INDUCTIVELY+COUPLED+PLASMA+REACTIVE+ION+ETCHING |
2 | TI HARD MASK | 6 | 100% | 1% | 4 | Search TI+HARD+MASK | Search TI+HARD+MASK |
3 | CL 2 BASED PLASMA | 4 | 75% | 1% | 3 | Search CL+2+BASED+PLASMA | Search CL+2+BASED+PLASMA |
4 | ETCH PRODUCT | 4 | 75% | 1% | 3 | Search ETCH+PRODUCT | Search ETCH+PRODUCT |
5 | CH3OH AR GAS | 2 | 67% | 1% | 2 | Search CH3OH+AR+GAS | Search CH3OH+AR+GAS |
6 | COFEB THIN FILMS | 2 | 67% | 1% | 2 | Search COFEB+THIN+FILMS | Search COFEB+THIN+FILMS |
7 | DRY ETCHING OF COPPER | 2 | 67% | 1% | 2 | Search DRY+ETCHING+OF+COPPER | Search DRY+ETCHING+OF+COPPER |
8 | TIN HARD MASK | 2 | 67% | 1% | 2 | Search TIN+HARD+MASK | Search TIN+HARD+MASK |
9 | CH3OH AR | 1 | 100% | 1% | 2 | Search CH3OH+AR | Search CH3OH+AR |
10 | CH4 O 2 AR GAS | 1 | 100% | 1% | 2 | Search CH4+O+2+AR+GAS | Search CH4+O+2+AR+GAS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | NIFECO | 17 | 72% | 5% | 13 |
2 | MRAM | 4 | 14% | 9% | 24 |
3 | CO NH3 | 3 | 100% | 1% | 3 |
4 | COSM | 3 | 100% | 1% | 3 |
5 | NIFE | 3 | 19% | 6% | 16 |
6 | COZR | 1 | 33% | 1% | 3 |
7 | PLASMA CHEMISTRIES | 1 | 33% | 1% | 2 |
8 | FEMN | 1 | 21% | 1% | 3 |
9 | INITIAL GROWTH BEHAVIOUR | 1 | 50% | 0% | 1 |
10 | ULTRAVIOLET ILLUMINATION | 1 | 22% | 1% | 2 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Surface Reactions in Microelectronics Process Technology | 2011 | 5 | 91 | 18% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | THIN FILM MICROELECT | 2 | 36% | 1.5% | 4 |
2 | DESIGN PLICAT MOL CATALYSTS | 1 | 17% | 1.5% | 4 |
3 | COMPLEX SYST ICS 8 | 0 | 33% | 0.4% | 1 |
4 | LG PRC | 0 | 33% | 0.4% | 1 |
5 | SUNGKYUNKWAN UNIV ADV NANO TECHNOL | 0 | 33% | 0.4% | 1 |
6 | TIANJIN PHOTON MAT TECH | 0 | 33% | 0.4% | 1 |
7 | NANO FABRICAT TECHNOL | 0 | 17% | 0.7% | 2 |
8 | LOW POWER ELECT | 0 | 11% | 1.1% | 3 |
9 | GREEN PLATFORM S | 0 | 10% | 1.1% | 3 |
10 | SPIN DEVICE | 0 | 14% | 0.7% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000256074 | MEMS PATTERNING//ETCHING DAMAGE//RUOX PT |
2 | 0.0000212889 | ELECTROLYTIC COPPER ADDITION//BCL3 PLASMA//FIS CHIM SUPERFICI INTER E |
3 | 0.0000166494 | INT JOINT IMTAS//CORNELL MAT SCI//ELECTRON BEAM ACTION |
4 | 0.0000133516 | PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION |
5 | 0.0000120446 | PERFLUORINATED CARBOXYLATES//COPPER CVD//IR AND NMR |
6 | 0.0000115847 | CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION |
7 | 0.0000101846 | ELECT DEVICES MAT TECHNOL//SIO2 ETCHING//PLASMA ETCHING |
8 | 0.0000088896 | FUJIMI KU//GAAS OXIDE//REACTIVE ION BEAM ETCHING |
9 | 0.0000087411 | RECH PERFORMANCE ENTREPRISES//SLIDER FABRICATION//CMOS BASED MICROSYSTEM |
10 | 0.0000087283 | MAGNETIC TUNNEL JUNCTION//MAGNETIC TUNNEL JUNCTIONS//TUNNELING MAGNETORESISTANCE |