Class information for:
Level 1: INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//CL 2 BASED PLASMA

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
24102 271 17.6 65%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
1317 8022 ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//SIO2 ETCHING

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING Author keyword 12 56% 6% 15
2 TI HARD MASK Author keyword 6 100% 1% 4
3 CL 2 BASED PLASMA Author keyword 4 75% 1% 3
4 ETCH PRODUCT Author keyword 4 75% 1% 3
5 CH3OH AR GAS Author keyword 2 67% 1% 2
6 COFEB THIN FILMS Author keyword 2 67% 1% 2
7 DRY ETCHING OF COPPER Author keyword 2 67% 1% 2
8 TIN HARD MASK Author keyword 2 67% 1% 2
9 THIN FILM MICROELECT Address 2 36% 1% 4
10 CH3OH AR Author keyword 1 100% 1% 2

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING 12 56% 6% 15 Search INDUCTIVELY+COUPLED+PLASMA+REACTIVE+ION+ETCHING Search INDUCTIVELY+COUPLED+PLASMA+REACTIVE+ION+ETCHING
2 TI HARD MASK 6 100% 1% 4 Search TI+HARD+MASK Search TI+HARD+MASK
3 CL 2 BASED PLASMA 4 75% 1% 3 Search CL+2+BASED+PLASMA Search CL+2+BASED+PLASMA
4 ETCH PRODUCT 4 75% 1% 3 Search ETCH+PRODUCT Search ETCH+PRODUCT
5 CH3OH AR GAS 2 67% 1% 2 Search CH3OH+AR+GAS Search CH3OH+AR+GAS
6 COFEB THIN FILMS 2 67% 1% 2 Search COFEB+THIN+FILMS Search COFEB+THIN+FILMS
7 DRY ETCHING OF COPPER 2 67% 1% 2 Search DRY+ETCHING+OF+COPPER Search DRY+ETCHING+OF+COPPER
8 TIN HARD MASK 2 67% 1% 2 Search TIN+HARD+MASK Search TIN+HARD+MASK
9 CH3OH AR 1 100% 1% 2 Search CH3OH+AR Search CH3OH+AR
10 CH4 O 2 AR GAS 1 100% 1% 2 Search CH4+O+2+AR+GAS Search CH4+O+2+AR+GAS

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 NIFECO 17 72% 5% 13
2 MRAM 4 14% 9% 24
3 CO NH3 3 100% 1% 3
4 COSM 3 100% 1% 3
5 NIFE 3 19% 6% 16
6 COZR 1 33% 1% 3
7 PLASMA CHEMISTRIES 1 33% 1% 2
8 FEMN 1 21% 1% 3
9 INITIAL GROWTH BEHAVIOUR 1 50% 0% 1
10 ULTRAVIOLET ILLUMINATION 1 22% 1% 2

Journals

Reviews



Title Publ. year Cit. Active
references
% act. ref.
to same field
Surface Reactions in Microelectronics Process Technology 2011 5 91 18%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
1 THIN FILM MICROELECT 2 36% 1.5% 4
2 DESIGN PLICAT MOL CATALYSTS 1 17% 1.5% 4
3 COMPLEX SYST ICS 8 0 33% 0.4% 1
4 LG PRC 0 33% 0.4% 1
5 SUNGKYUNKWAN UNIV ADV NANO TECHNOL 0 33% 0.4% 1
6 TIANJIN PHOTON MAT TECH 0 33% 0.4% 1
7 NANO FABRICAT TECHNOL 0 17% 0.7% 2
8 LOW POWER ELECT 0 11% 1.1% 3
9 GREEN PLATFORM S 0 10% 1.1% 3
10 SPIN DEVICE 0 14% 0.7% 2

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000256074 MEMS PATTERNING//ETCHING DAMAGE//RUOX PT
2 0.0000212889 ELECTROLYTIC COPPER ADDITION//BCL3 PLASMA//FIS CHIM SUPERFICI INTER E
3 0.0000166494 INT JOINT IMTAS//CORNELL MAT SCI//ELECTRON BEAM ACTION
4 0.0000133516 PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION
5 0.0000120446 PERFLUORINATED CARBOXYLATES//COPPER CVD//IR AND NMR
6 0.0000115847 CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION
7 0.0000101846 ELECT DEVICES MAT TECHNOL//SIO2 ETCHING//PLASMA ETCHING
8 0.0000088896 FUJIMI KU//GAAS OXIDE//REACTIVE ION BEAM ETCHING
9 0.0000087411 RECH PERFORMANCE ENTREPRISES//SLIDER FABRICATION//CMOS BASED MICROSYSTEM
10 0.0000087283 MAGNETIC TUNNEL JUNCTION//MAGNETIC TUNNEL JUNCTIONS//TUNNELING MAGNETORESISTANCE