Class information for:
Level 1: SURFACE AND INTERFACE PHENOMENA//TELECOMMUN ADVANCEMENTS ORG//SENDAI

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
23478 289 14.6 32%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
913 10550 EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
1 SURFACE AND INTERFACE PHENOMENA Author keyword 2 67% 1% 2
2 TELECOMMUN ADVANCEMENTS ORG Address 2 67% 1% 2
3 SENDAI Address 1 14% 3% 9
4 ALXGA1 XP Author keyword 1 100% 1% 2
5 VAPOR PRESSURE CONTROL Author keyword 1 100% 1% 2
6 ANTISITE ATOMS Author keyword 1 50% 0% 1
7 AOBA YAMA 02 Address 1 50% 0% 1
8 ETCH PIT DISTRIBUTION Author keyword 1 50% 0% 1
9 GAP N Author keyword 1 50% 0% 1
10 GAPAS Author keyword 1 50% 0% 1

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
LCSH search Wikipedia search
1 SURFACE AND INTERFACE PHENOMENA 2 67% 1% 2 Search SURFACE+AND+INTERFACE+PHENOMENA Search SURFACE+AND+INTERFACE+PHENOMENA
2 ALXGA1 XP 1 100% 1% 2 Search ALXGA1+XP Search ALXGA1+XP
3 VAPOR PRESSURE CONTROL 1 100% 1% 2 Search VAPOR+PRESSURE+CONTROL Search VAPOR+PRESSURE+CONTROL
4 ANTISITE ATOMS 1 50% 0% 1 Search ANTISITE+ATOMS Search ANTISITE+ATOMS
5 ETCH PIT DISTRIBUTION 1 50% 0% 1 Search ETCH+PIT+DISTRIBUTION Search ETCH+PIT+DISTRIBUTION
6 GAP N 1 50% 0% 1 Search GAP++N Search GAP++N
7 GAPAS 1 50% 0% 1 Search GAPAS Search GAPAS
8 SLANT PROPAGATION 1 50% 0% 1 Search SLANT+PROPAGATION Search SLANT+PROPAGATION
9 STEP APPROXIMATION 1 50% 0% 1 Search STEP+APPROXIMATION Search STEP+APPROXIMATION
10 STIMULATED RAMAN GAIN SPECTROSCOPY 1 50% 0% 1 Search STIMULATED+RAMAN+GAIN+SPECTROSCOPY Search STIMULATED+RAMAN+GAIN+SPECTROSCOPY

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 TEMPERATURE DIFFERENCE METHOD 11 65% 4% 11
2 CONTROLLED VAPOR PRESSURE 11 67% 3% 10
3 PUMP LIGHT 1 100% 1% 2
4 STOICHIOMETRY CONTROLLED GAP 1 100% 1% 2
5 VIRTUAL ENTHALPIES 1 21% 1% 4
6 WURTZITE TYPE SEMICONDUCTORS 1 21% 1% 4
7 PERFECT CRYSTAL GROWTH 1 50% 0% 1
8 NATIVE DEFECT 0 10% 0% 1
9 ANTISTRUCTURE PAIR FORMATION 0 100% 0% 1
10 ISOLATED ANTISITE DEFECTS 0 100% 0% 1

Journals

Reviews



Title Publ. year Cit. Active
references
% act. ref.
to same field
STOICHIOMETRY OF III-V COMPOUNDS 1994 28 33 9%
On persistent photoconductivity in A(III)B(V) semiconductor compounds 1999 1 9 11%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
1 TELECOMMUN ADVANCEMENTS ORG 2 67% 0.7% 2
2 SENDAI 1 14% 3.1% 9
3 AOBA YAMA 02 1 50% 0.3% 1
4 KAWAUCHI AOBA KU 1 50% 0.3% 1
5 SEMICOND FDN 0 25% 0.3% 1
6 TELECOMMUN ADVANCEMENT ORG 0 10% 0.3% 1
7 LENINSKII PROSP 53 0 100% 0.3% 1

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000128367 PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF
2 0.0000127129 CHARGE FLOW MECHANISM//HEAT TREATMENT METHOD//RECOMBINATION ENHANCED DIFFUSION
3 0.0000126775 GAP N//PICOSECOND TIMING RESOLUTION//SI H BOND DISSOCIATION
4 0.0000125342 MAGNET SENSOR//GROUP III V EXCEPT NITRIDES//COPPER VACANCY COMPLEX
5 0.0000101812 DOT IN A WELL STRUCTURES//EXCITATION POWER DEPENDENCES//RECOMBINATION BARRIER
6 0.0000090848 DX CENTERS//DX CENTER//DX CENTRE
7 0.0000090387 ELECTRON BEAM INDUCED CURRENT//ELECTRON BEAM APPLICATION//SEMICONDUCTOR MATERIAL MEASUREMENTS
8 0.0000082132 CURRENT VOLTAGE CHARACTERISTICS//2DEG DENSITY//AU EVAPORATION
9 0.0000080364 ING ELECT SEES//SECC PUEBLA//ALLOY SOURCE
10 0.0000072380 TIN PEST//ALLOTROPIC TRANSITION//STRUCTURAL INTEGRITY IN ELECTRONICS