Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
23478 | 289 | 14.6 | 32% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
913 | 10550 | EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SURFACE AND INTERFACE PHENOMENA | Author keyword | 2 | 67% | 1% | 2 |
2 | TELECOMMUN ADVANCEMENTS ORG | Address | 2 | 67% | 1% | 2 |
3 | SENDAI | Address | 1 | 14% | 3% | 9 |
4 | ALXGA1 XP | Author keyword | 1 | 100% | 1% | 2 |
5 | VAPOR PRESSURE CONTROL | Author keyword | 1 | 100% | 1% | 2 |
6 | ANTISITE ATOMS | Author keyword | 1 | 50% | 0% | 1 |
7 | AOBA YAMA 02 | Address | 1 | 50% | 0% | 1 |
8 | ETCH PIT DISTRIBUTION | Author keyword | 1 | 50% | 0% | 1 |
9 | GAP N | Author keyword | 1 | 50% | 0% | 1 |
10 | GAPAS | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SURFACE AND INTERFACE PHENOMENA | 2 | 67% | 1% | 2 | Search SURFACE+AND+INTERFACE+PHENOMENA | Search SURFACE+AND+INTERFACE+PHENOMENA |
2 | ALXGA1 XP | 1 | 100% | 1% | 2 | Search ALXGA1+XP | Search ALXGA1+XP |
3 | VAPOR PRESSURE CONTROL | 1 | 100% | 1% | 2 | Search VAPOR+PRESSURE+CONTROL | Search VAPOR+PRESSURE+CONTROL |
4 | ANTISITE ATOMS | 1 | 50% | 0% | 1 | Search ANTISITE+ATOMS | Search ANTISITE+ATOMS |
5 | ETCH PIT DISTRIBUTION | 1 | 50% | 0% | 1 | Search ETCH+PIT+DISTRIBUTION | Search ETCH+PIT+DISTRIBUTION |
6 | GAP N | 1 | 50% | 0% | 1 | Search GAP++N | Search GAP++N |
7 | GAPAS | 1 | 50% | 0% | 1 | Search GAPAS | Search GAPAS |
8 | SLANT PROPAGATION | 1 | 50% | 0% | 1 | Search SLANT+PROPAGATION | Search SLANT+PROPAGATION |
9 | STEP APPROXIMATION | 1 | 50% | 0% | 1 | Search STEP+APPROXIMATION | Search STEP+APPROXIMATION |
10 | STIMULATED RAMAN GAIN SPECTROSCOPY | 1 | 50% | 0% | 1 | Search STIMULATED+RAMAN+GAIN+SPECTROSCOPY | Search STIMULATED+RAMAN+GAIN+SPECTROSCOPY |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | TEMPERATURE DIFFERENCE METHOD | 11 | 65% | 4% | 11 |
2 | CONTROLLED VAPOR PRESSURE | 11 | 67% | 3% | 10 |
3 | PUMP LIGHT | 1 | 100% | 1% | 2 |
4 | STOICHIOMETRY CONTROLLED GAP | 1 | 100% | 1% | 2 |
5 | VIRTUAL ENTHALPIES | 1 | 21% | 1% | 4 |
6 | WURTZITE TYPE SEMICONDUCTORS | 1 | 21% | 1% | 4 |
7 | PERFECT CRYSTAL GROWTH | 1 | 50% | 0% | 1 |
8 | NATIVE DEFECT | 0 | 10% | 0% | 1 |
9 | ANTISTRUCTURE PAIR FORMATION | 0 | 100% | 0% | 1 |
10 | ISOLATED ANTISITE DEFECTS | 0 | 100% | 0% | 1 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
STOICHIOMETRY OF III-V COMPOUNDS | 1994 | 28 | 33 | 9% |
On persistent photoconductivity in A(III)B(V) semiconductor compounds | 1999 | 1 | 9 | 11% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | TELECOMMUN ADVANCEMENTS ORG | 2 | 67% | 0.7% | 2 |
2 | SENDAI | 1 | 14% | 3.1% | 9 |
3 | AOBA YAMA 02 | 1 | 50% | 0.3% | 1 |
4 | KAWAUCHI AOBA KU | 1 | 50% | 0.3% | 1 |
5 | SEMICOND FDN | 0 | 25% | 0.3% | 1 |
6 | TELECOMMUN ADVANCEMENT ORG | 0 | 10% | 0.3% | 1 |
7 | LENINSKII PROSP 53 | 0 | 100% | 0.3% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000128367 | PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF |
2 | 0.0000127129 | CHARGE FLOW MECHANISM//HEAT TREATMENT METHOD//RECOMBINATION ENHANCED DIFFUSION |
3 | 0.0000126775 | GAP N//PICOSECOND TIMING RESOLUTION//SI H BOND DISSOCIATION |
4 | 0.0000125342 | MAGNET SENSOR//GROUP III V EXCEPT NITRIDES//COPPER VACANCY COMPLEX |
5 | 0.0000101812 | DOT IN A WELL STRUCTURES//EXCITATION POWER DEPENDENCES//RECOMBINATION BARRIER |
6 | 0.0000090848 | DX CENTERS//DX CENTER//DX CENTRE |
7 | 0.0000090387 | ELECTRON BEAM INDUCED CURRENT//ELECTRON BEAM APPLICATION//SEMICONDUCTOR MATERIAL MEASUREMENTS |
8 | 0.0000082132 | CURRENT VOLTAGE CHARACTERISTICS//2DEG DENSITY//AU EVAPORATION |
9 | 0.0000080364 | ING ELECT SEES//SECC PUEBLA//ALLOY SOURCE |
10 | 0.0000072380 | TIN PEST//ALLOTROPIC TRANSITION//STRUCTURAL INTEGRITY IN ELECTRONICS |