Class information for:
Level 1: SIDEWALL OXIDATION//COMPUTAT ELECT//MEMORY DEVICE BUSINESS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
22933 307 12.6 41%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SIDEWALL OXIDATION Author keyword 2 67% 1% 2
2 COMPUTAT ELECT Address 2 27% 2% 7
3 MEMORY DEVICE BUSINESS Address 2 43% 1% 3
4 SHALLOW TRENCH ISOLATION Author keyword 2 11% 5% 14
5 DEVICE TECHNOL MODELING Address 1 100% 1% 2
6 INVERSE NARROW CHANNEL EFFECT Author keyword 1 100% 1% 2
7 NARROW CHANNEL TRANSISTOR Author keyword 1 100% 1% 2
8 OXIDE RECESS Author keyword 1 100% 1% 2
9 PROC ENGN 5 Address 1 40% 1% 2
10 TRENCH ISOLATION Author keyword 1 14% 2% 6

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 SIDEWALL OXIDATION 2 67% 1% 2 Search SIDEWALL+OXIDATION Search SIDEWALL+OXIDATION
2 SHALLOW TRENCH ISOLATION 2 11% 5% 14 Search SHALLOW+TRENCH+ISOLATION Search SHALLOW+TRENCH+ISOLATION
3 INVERSE NARROW CHANNEL EFFECT 1 100% 1% 2 Search INVERSE+NARROW+CHANNEL+EFFECT Search INVERSE+NARROW+CHANNEL+EFFECT
4 NARROW CHANNEL TRANSISTOR 1 100% 1% 2 Search NARROW+CHANNEL+TRANSISTOR Search NARROW+CHANNEL+TRANSISTOR
5 OXIDE RECESS 1 100% 1% 2 Search OXIDE+RECESS Search OXIDE+RECESS
6 TRENCH ISOLATION 1 14% 2% 6 Search TRENCH+ISOLATION Search TRENCH+ISOLATION
7 INVERSE NARROW WIDTH EFFECT 1 33% 1% 2 Search INVERSE+NARROW+WIDTH+EFFECT Search INVERSE+NARROW+WIDTH+EFFECT
8 NARROW WIDTH 1 33% 1% 2 Search NARROW+WIDTH Search NARROW+WIDTH
9 SHALLOW TRENCH 1 33% 1% 2 Search SHALLOW+TRENCH Search SHALLOW+TRENCH
10 30 A 1 50% 0% 1 Search 30+A Search 30+A

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 BONDED WAFERS 3 60% 1% 3
2 BURIED OXIDE THICKNESS 1 100% 1% 2
3 ISOLATED SOI 1 100% 1% 2
4 SMALL GEOMETRY MOSFET 1 50% 1% 2
5 ANOMALOUS LEAKAGE CURRENT 0 25% 0% 1
6 IGFETS 0 13% 0% 1
7 MAGNETOTRANSISTOR 0 11% 0% 1
8 SUBMICRON CMOS TECHNOLOGIES 0 11% 0% 1
9 INSULATOR BONDED WAFERS 0 100% 0% 1
10 NARROW WIDTH MOSFETS 0 100% 0% 1

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases 1999 13 6 83%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 COMPUTAT ELECT 2 27% 2.3% 7
2 MEMORY DEVICE BUSINESS 2 43% 1.0% 3
3 DEVICE TECHNOL MODELING 1 100% 0.7% 2
4 PROC ENGN 5 1 40% 0.7% 2
5 INHA SEMICOND THIN FILM TECHNOL 1 33% 0.7% 2
6 CHARTERED SEMICOND MFG 1 50% 0.3% 1
7 DAN NOBLE 1 50% 0.3% 1
8 DEEP SUBMICRON INTEGRATED CIRCUITS 1 50% 0.3% 1
9 LOGIC TECHNOL 1 50% 0.3% 1
10 SEMICONDUCT DEV 1 50% 0.3% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000232384 FILM EDGE//SHAPE ENGINEERING//SILICON TECHNOLOGIES
2 0.0000149697 CAPACITORLESS DRAM//1T DRAM//CAPACITORLESS 1T DRAM
3 0.0000121439 HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION
4 0.0000120490 IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE//P N JUNCTION LEAKAGE
5 0.0000108054 NONQUASI STATIC NQS EFFECT//QUCS//RSCE
6 0.0000102696 DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS
7 0.0000096007 DATA RETENTION TIME//VOLTAGE DOWN CONVERTER//FERROELECTRIC MEMORY
8 0.0000092755 MOS TUNNELING DIODE//ELECTRON HOLE PLASMA RECOMBINATION//LATERAL NONUNIFORMITY LNU
9 0.0000091942 MULTIPLE SCALING ASYMPTOTIC EXPANSIONS//DRIFT DIFFUSION PROCESSES//MOTION OF CHARGED PARTICLES
10 0.0000083545 TRANSFINITE GRAPHS//HYPERREAL VOLTAGES AND CURRENTS//NODE VOLTAGES