Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 22917 | 308 | 16.0 | 41% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 372 | 16511 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | OPTIMIZATION OF ANNEALING | Author keyword | 8 | 100% | 2% | 5 |
| 2 | ERBIUM RELATED CENTRES | Author keyword | 4 | 75% | 1% | 3 |
| 3 | SELF ASSEMBLED SILICON QUANTUM WELLS | Author keyword | 4 | 75% | 1% | 3 |
| 4 | SILICON MICROCAVITY | Author keyword | 3 | 57% | 1% | 4 |
| 5 | DECREASING OF DEPTH OF P N JUNCTIONS | Author keyword | 3 | 100% | 1% | 3 |
| 6 | OPTIMIZATION OF TECHNOLOGICAL PROCESS | Author keyword | 3 | 100% | 1% | 3 |
| 7 | ERBIUM RELATED CENTERS | Author keyword | 2 | 67% | 1% | 2 |
| 8 | NIZHNY NOVGOROD | Address | 2 | 50% | 1% | 3 |
| 9 | ARBEITSGRP EPR | Address | 1 | 100% | 1% | 2 |
| 10 | DECREASING OF MECHANICAL STRESS | Author keyword | 1 | 100% | 1% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | OXYGEN FREE SILICON | 1 | 100% | 1% | 2 |
| 2 | THERMAL IONIZATION RATES | 1 | 100% | 1% | 2 |
| 3 | OPTICAL NUCLEAR POLARIZATION | 1 | 30% | 1% | 3 |
| 4 | VACANCY OXYGEN CENTER | 1 | 33% | 1% | 2 |
| 5 | SPIN INTERFERENCE | 1 | 50% | 0% | 1 |
| 6 | DONOR RELATED LEVELS | 0 | 33% | 0% | 1 |
| 7 | LOCALIZED PARAMAGNETIC STATES | 0 | 18% | 1% | 2 |
| 8 | BROKEN BONDS | 0 | 25% | 0% | 1 |
| 9 | QUANTUM DOT HELIUM | 0 | 25% | 0% | 1 |
| 10 | SI ZN | 0 | 25% | 0% | 1 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| Infrared luminescence from silicon nanostructures heavily doped with boron | 2012 | 1 | 34 | 35% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | NIZHNY NOVGOROD | 2 | 50% | 1.0% | 3 |
| 2 | ARBEITSGRP EPR | 1 | 100% | 0.6% | 2 |
| 3 | CEF SEMICOND | 1 | 50% | 0.3% | 1 |
| 4 | PHYS MICROSTRUCTU | 0 | 33% | 0.3% | 1 |
| 5 | AO IOFFE PHYS TECH | 0 | 100% | 0.3% | 1 |
| 6 | IOFFE PHYSICALTECH | 0 | 100% | 0.3% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000178394 | ELECTRICALLY DETECTED MAGNETIC RESONANCE//EDMR//BERLIN JOINT EPR |
| 2 | 0.0000169192 | FARADAY COLLECTOR//MAGNETIC ANALYZER//IMAGE WIDTH |
| 3 | 0.0000147666 | BANDLIKE STATES//DISLOCATION ENGINEERED//RECOMBINATION STRENGTH |
| 4 | 0.0000121365 | GETTERING//GETTERING EFFICIENCY//SI AU |
| 5 | 0.0000089178 | CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD |
| 6 | 0.0000071385 | GAP N//PICOSECOND TIMING RESOLUTION//SI H BOND DISSOCIATION |
| 7 | 0.0000065400 | CHARGED DISLOCATIONS//IMPURITY DEFECT COMPOSITION//TRAINING PHYS CHEM MAT SCI |
| 8 | 0.0000061460 | MICROSYST IMICRO//MULTIPHONON RECOMBINATION//EXP ANGEW PHYS |
| 9 | 0.0000059334 | QOM BRANCH//LANGEVIN DYNAMIC//B16N16 |
| 10 | 0.0000047533 | WERKSTOFFE ELEKTROTECH CENIDE//OPTICAL ANALOG SIGNAL TRANSMISSION//SPIN OPT |