Class information for:
Level 1: PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
22186 334 24.0 76%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
666 12577 SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 PHYSICOCHIM MOLEC ORSAY Address 1 100% 1% 2
2 SURFACE STRUCTURE AND ROUGHNESS Author keyword 1 100% 1% 2
3 DESORPTION INDUCED BY ELECTRON STIMULATION Author keyword 1 24% 1% 4
4 ANGLE RESOLVED DIET Author keyword 1 22% 1% 4
5 CNRS ELECT FONDAMENTALE Address 1 50% 0% 1
6 CUCL111 SURFACE Author keyword 1 50% 0% 1
7 ELECTRONIC BONDING Author keyword 1 50% 0% 1
8 MONOCHLORIDE Author keyword 1 50% 0% 1
9 MONOLAYER ETCHING Author keyword 1 50% 0% 1
10 NAKAYAMA Address 1 50% 0% 1

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class		 LCSH search Wikipedia search
1 SURFACE STRUCTURE AND ROUGHNESS 1 100% 1% 2 Search SURFACE+STRUCTURE+AND+ROUGHNESS Search SURFACE+STRUCTURE+AND+ROUGHNESS
2 DESORPTION INDUCED BY ELECTRON STIMULATION 1 24% 1% 4 Search DESORPTION+INDUCED+BY+ELECTRON+STIMULATION Search DESORPTION+INDUCED+BY+ELECTRON+STIMULATION
3 ANGLE RESOLVED DIET 1 22% 1% 4 Search ANGLE+RESOLVED+DIET Search ANGLE+RESOLVED+DIET
4 CUCL111 SURFACE 1 50% 0% 1 Search CUCL111+SURFACE Search CUCL111+SURFACE
5 ELECTRONIC BONDING 1 50% 0% 1 Search ELECTRONIC+BONDING Search ELECTRONIC+BONDING
6 MONOCHLORIDE 1 50% 0% 1 Search MONOCHLORIDE Search MONOCHLORIDE
7 MONOLAYER ETCHING 1 50% 0% 1 Search MONOLAYER+ETCHING Search MONOLAYER+ETCHING
8 STM IMAGES 1 16% 1% 3 Search STM+IMAGES Search STM+IMAGES
9 CL ION 0 33% 0% 1 Search CL+ION Search CL+ION
10 LASER SURFACE CLEANING 0 33% 0% 1 Search LASER+SURFACE+CLEANING Search LASER+SURFACE+CLEANING

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 CHLORINE CHEMISORPTION 13 67% 4% 12
2 BONDING SITES 9 33% 7% 23
3 HALOGEN CHEMISORPTION 6 100% 1% 4
4 CL ADSORPTION 4 75% 1% 3
5 CHLORINE ATMOSPHERE 2 33% 2% 6
6 001 SILICON SURFACES 2 67% 1% 2
7 ESDIAD 2 18% 3% 9
8 BR ETCHED SI100 2X1 1 100% 1% 2
9 SF6 BEAM 1 100% 1% 2
10 SI1002X1 CL 1 100% 1% 2

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
Halogen etching of Si via atomic-scale processes 2001 49 78 42%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 PHYSICOCHIM MOLEC ORSAY 1 100% 0.6% 2
2 CNRS ELECT FONDAMENTALE 1 50% 0.3% 1
3 NAKAYAMA 1 50% 0.3% 1
4 PREC SCI TECHNOL PL PHYS 1 50% 0.3% 1
5 SEMICOND ELECT IHT 0 33% 0.3% 1
6 PHOTOPHYS MOLEC 0 17% 0.6% 2
7 CNRS PHOTOPHYS MOL 0 25% 0.3% 1
8 FREDERICH SEITZ MAT 0 25% 0.3% 1
9 MAT HALVLEDARFYS 0 25% 0.3% 1
10 OBERFLACHENCHEM KATALYSE ABT 0 25% 0.3% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000226953 CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION
2 0.0000192599 HYDROGEN SURFACTANT//AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COM//EXCELLENCE QUANTUM COMPUTAT COMMUN TECHNOL
3 0.0000175538 GE001//C4 X 2//C4X2
4 0.0000165203 SYNCHROTRON RADIATION STIMULATED ETCHING//SYNCHROTRON RADIATION EXCITED GROWTH//VACUUM UV PHOTOSCI
5 0.0000163224 ORGANIC SEMICONDUCTOR INTERFACE//SI100//GE100
6 0.0000158365 ANGLE RESOLVED DIET INCLUDING ELECTRON STIMULATED DESORPTION ION ANGULAR DISTRIBUTION ESDIAD//ELECTRON STIMULATED DESORPTION ESD//STIMULATED DESORPTION
7 0.0000157800 INT JOINT IMTAS//CORNELL MAT SCI//ELECTRON BEAM ACTION
8 0.0000133516 INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//CL 2 BASED PLASMA
9 0.0000131876 ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING
10 0.0000121396 TOTAL EXTERNAL REFLECTION//X RAY STANDING WAVES//LAYERED SYNTHETIC MICROSTRUCTURES