Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 22079 | 338 | 13.4 | 53% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | 4H SIC MESFET | Author keyword | 15 | 77% | 3% | 10 |
| 2 | MESFET | Author keyword | 14 | 18% | 21% | 72 |
| 3 | MESFETS | Author keyword | 7 | 20% | 9% | 30 |
| 4 | MAXIMUM OUTPUT POWER DENSITY | Author keyword | 4 | 67% | 1% | 4 |
| 5 | DRAIN INDUCED BARRIER LOWERING EFFECT | Author keyword | 4 | 75% | 1% | 3 |
| 6 | SOI MESFET | Author keyword | 4 | 75% | 1% | 3 |
| 7 | L GATE | Author keyword | 3 | 100% | 1% | 3 |
| 8 | METAL SEMICONDUCTOR FIELD EFFECT TRANSISTORS | Author keyword | 3 | 42% | 1% | 5 |
| 9 | METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR | Author keyword | 3 | 25% | 3% | 9 |
| 10 | SIC MESFET | Author keyword | 2 | 22% | 2% | 6 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | 4H SIC MESFET | 15 | 77% | 3% | 10 | Search 4H+SIC+MESFET | Search 4H+SIC+MESFET |
| 2 | MESFET | 14 | 18% | 21% | 72 | Search MESFET | Search MESFET |
| 3 | MESFETS | 7 | 20% | 9% | 30 | Search MESFETS | Search MESFETS |
| 4 | MAXIMUM OUTPUT POWER DENSITY | 4 | 67% | 1% | 4 | Search MAXIMUM+OUTPUT+POWER+DENSITY | Search MAXIMUM+OUTPUT+POWER+DENSITY |
| 5 | DRAIN INDUCED BARRIER LOWERING EFFECT | 4 | 75% | 1% | 3 | Search DRAIN+INDUCED+BARRIER+LOWERING+EFFECT | Search DRAIN+INDUCED+BARRIER+LOWERING+EFFECT |
| 6 | SOI MESFET | 4 | 75% | 1% | 3 | Search SOI+MESFET | Search SOI+MESFET |
| 7 | L GATE | 3 | 100% | 1% | 3 | Search L+GATE | Search L+GATE |
| 8 | METAL SEMICONDUCTOR FIELD EFFECT TRANSISTORS | 3 | 42% | 1% | 5 | Search METAL+SEMICONDUCTOR+FIELD+EFFECT+TRANSISTORS | Search METAL+SEMICONDUCTOR+FIELD+EFFECT+TRANSISTORS |
| 9 | METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR | 3 | 25% | 3% | 9 | Search METAL+SEMICONDUCTOR+FIELD+EFFECT+TRANSISTOR | Search METAL+SEMICONDUCTOR+FIELD+EFFECT+TRANSISTOR |
| 10 | SIC MESFET | 2 | 22% | 2% | 6 | Search SIC+MESFET | Search SIC+MESFET |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | SIC MESFETS | 29 | 71% | 7% | 24 |
| 2 | 4H SIC MESFETS | 19 | 70% | 5% | 16 |
| 3 | SILICON MESFETS | 15 | 82% | 3% | 9 |
| 4 | SIC MESFET | 4 | 44% | 2% | 7 |
| 5 | SILICON CARBIDE MESFETS | 2 | 67% | 1% | 2 |
| 6 | SOI MESFET | 2 | 67% | 1% | 2 |
| 7 | SOI MESFETS | 2 | 36% | 1% | 4 |
| 8 | SUBTHRESHOLD CURRENT | 2 | 36% | 1% | 4 |
| 9 | 4H SIC MESFET | 1 | 50% | 1% | 2 |
| 10 | MICROWAVE POWER MESFETS | 1 | 50% | 1% | 2 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| A novel 4H-SiC MESFET with a L-gate and a partial p-type spacer | 2012 | 0 | 9 | 67% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | EDUC MINIST WIDE BAND G SEMICOND MAT | 1 | 100% | 0.6% | 2 |
| 2 | MAHDISHAHR BRANCH | 1 | 40% | 0.6% | 2 |
| 3 | CNRS UMR 5530 | 1 | 50% | 0.3% | 1 |
| 4 | CNRS UMR 5531 | 1 | 50% | 0.3% | 1 |
| 5 | RD HEAD QUARTER | 1 | 50% | 0.3% | 1 |
| 6 | SSG REG HOSHIARPUR | 1 | 50% | 0.3% | 1 |
| 7 | WIDE BAND G SEMICONDUCT MAT DEVICES | 1 | 50% | 0.3% | 1 |
| 8 | MONOLITH INTEGRATED CIRCUITS MODUL | 1 | 25% | 0.6% | 2 |
| 9 | PHOENIX CORP S | 1 | 12% | 1.2% | 4 |
| 10 | CPD SEMICOND SCI TECHNOL | 0 | 33% | 0.3% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000204288 | LARGE SIGNAL MODEL//NONLINEAR MEASUREMENTS//MESFETS |
| 2 | 0.0000163453 | DRAIN CURRENT TRANSIENT//FUNCT ELEMENTS CONTROL SYST//GATE LAG |
| 3 | 0.0000145880 | 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS |
| 4 | 0.0000125897 | FLUCTUAT//PLANAR GUNN DIODE//ELLIPSOIDAL VALLEYS |
| 5 | 0.0000109807 | OHMIC CONTACT//OHMIC CONTACTS//P TYPE SIC |
| 6 | 0.0000095170 | LEHRSTUHL THEOR FESTKORPERPHYS//SEMI INSULATING SIC//TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION |
| 7 | 0.0000086118 | HETEROJUNCTION PHOTOTRANSISTOR HPT//HETEROJUNCTION PHOTOTRANSISTOR//OPTICALLY CONTROLLED MESFET |
| 8 | 0.0000073383 | ATSUGI ELECT COMMUN S FUNCT DEVICE DEV//INTEGRATED PROD BUSINESS UNIT//SINGLE VOLTAGE SUPPLY |
| 9 | 0.0000061377 | MICROPIPE//SUBLIMATION GROWTH//MICROPIPES |
| 10 | 0.0000058566 | SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE BV//LDMOS |