Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
21809 | 347 | 14.8 | 48% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | LUMILEDS LIGHTING | Address | 2 | 67% | 1% | 2 |
2 | ZINC DIFFUSION | Author keyword | 1 | 21% | 2% | 6 |
3 | ACCEPTOR DIFFUSION | Author keyword | 1 | 100% | 1% | 2 |
4 | ZN DIFFUSION | Author keyword | 1 | 16% | 2% | 7 |
5 | CANADIAN PHOTON FABRICAT | Address | 1 | 33% | 1% | 2 |
6 | CARRIER PROFILES | Author keyword | 1 | 50% | 0% | 1 |
7 | GAAS TUNNEL JUNCTIONS | Author keyword | 1 | 50% | 0% | 1 |
8 | LASER BEAM INDUCED CURRENTLBIC | Author keyword | 1 | 50% | 0% | 1 |
9 | PLASMON PHONON INTERACTIONS | Author keyword | 1 | 50% | 0% | 1 |
10 | POLYMER SPIN ON FILM | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ZINC DIFFUSION | 11 | 36% | 7% | 25 |
2 | ZN DIFFUSION | 5 | 19% | 6% | 22 |
3 | GAAS06P04 | 3 | 100% | 1% | 3 |
4 | HBR K2CR2O7 H2O ETCHING SYSTEM | 2 | 67% | 1% | 2 |
5 | DOPED INP | 1 | 17% | 2% | 8 |
6 | TUBE DIFFUSION | 1 | 100% | 1% | 2 |
7 | DOPANT INCORPORATION | 1 | 33% | 1% | 2 |
8 | EXCESS CRYSTALLINE | 1 | 50% | 0% | 1 |
9 | LASING THRESHOLD CURRENT | 0 | 33% | 0% | 1 |
10 | ZINC INCORPORATION | 0 | 33% | 0% | 1 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review | 1999 | 3 | 22 | 86% |
DIFFUSION IN III-V SEMICONDUCTORS FROM SPIN-ON FILM SOURCES | 1984 | 48 | 14 | 50% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | LUMILEDS LIGHTING | 2 | 67% | 0.6% | 2 |
2 | CANADIAN PHOTON FABRICAT | 1 | 33% | 0.6% | 2 |
3 | OPT DEVICES RD | 0 | 25% | 0.3% | 1 |
4 | RIC VENEZIA | 0 | 20% | 0.3% | 1 |
5 | N CAUCASIAN MIN MET | 0 | 17% | 0.3% | 1 |
6 | DEVICE PROJECT | 0 | 100% | 0.3% | 1 |
7 | FIBER OPT COMM | 0 | 100% | 0.3% | 1 |
8 | HIGH FREQUENCY OPT DEVICES WORKS | 0 | 100% | 0.3% | 1 |
9 | HIGH FREQUENY OPT DEVICES WORKS | 0 | 100% | 0.3% | 1 |
10 | OPTOELECT INTEGRATED CIRCUITS | 0 | 100% | 0.3% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000266220 | QUANTUM WELL INTERMIXING//QUANTUM WELL INTERDIFFUSION//IMPURITY FREE DISORDERING |
2 | 0.0000205480 | FE DOPED INP//PHOSPHORUS VAPOR PRESSURE//WAFER ANNEALING |
3 | 0.0000146986 | IN082GA018AS//SHORT WAVELENGTH INFRARED//INFRARED IMAGING MAT DETECTORS |
4 | 0.0000142434 | MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS |
5 | 0.0000135284 | TRANSISTOR LASER//TRANSISTOR LASER TL//MICRONANOSYST TECHNOL |
6 | 0.0000117709 | OPT TRANSMISS COMPONENTS//TRANSMISS DEVICES RD S//EMCORE |
7 | 0.0000097481 | IMPACT IONIZATION//AVALANCHE PHOTODIODES APDS//AVALANCHE PHOTODIODE APD |
8 | 0.0000093340 | SELECTIVE AREA GROWTH//TERTIARYBUTYLCHLORIDE//SELECTIVE EPITAXY |
9 | 0.0000084588 | MESA STEP HEIGHT//LAVOISIER IREM//IMAGE ARRAY |
10 | 0.0000083418 | SOLID PHASE REGROWTH//PD GE//OHMIC CONTACTS |