Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
21676 | 352 | 14.5 | 49% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
138 | 22619 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | POLYOXIDE | Author keyword | 9 | 67% | 2% | 8 |
2 | INTERPOLY OXIDE | Author keyword | 1 | 100% | 1% | 2 |
3 | NONPLANAR POLYOXIDE | Author keyword | 1 | 100% | 1% | 2 |
4 | PLASMA OXIDE | Author keyword | 1 | 40% | 1% | 2 |
5 | AREA GAIN | Author keyword | 1 | 50% | 0% | 1 |
6 | CONTROL OF RESIDUAL STRESS | Author keyword | 1 | 50% | 0% | 1 |
7 | DEEP ELECTRON TRAPS | Author keyword | 1 | 50% | 0% | 1 |
8 | FN INJECTION | Author keyword | 1 | 50% | 0% | 1 |
9 | FOWLER NORDHEIM LEAKAGE CURRENT | Author keyword | 1 | 50% | 0% | 1 |
10 | GATE OFF CURRENT | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | POLYOXIDE | 9 | 67% | 2% | 8 | Search POLYOXIDE | Search POLYOXIDE |
2 | INTERPOLY OXIDE | 1 | 100% | 1% | 2 | Search INTERPOLY+OXIDE | Search INTERPOLY+OXIDE |
3 | NONPLANAR POLYOXIDE | 1 | 100% | 1% | 2 | Search NONPLANAR+POLYOXIDE | Search NONPLANAR+POLYOXIDE |
4 | PLASMA OXIDE | 1 | 40% | 1% | 2 | Search PLASMA+OXIDE | Search PLASMA+OXIDE |
5 | AREA GAIN | 1 | 50% | 0% | 1 | Search AREA+GAIN | Search AREA+GAIN |
6 | CONTROL OF RESIDUAL STRESS | 1 | 50% | 0% | 1 | Search CONTROL+OF+RESIDUAL+STRESS | Search CONTROL+OF+RESIDUAL+STRESS |
7 | DEEP ELECTRON TRAPS | 1 | 50% | 0% | 1 | Search DEEP+ELECTRON+TRAPS | Search DEEP+ELECTRON+TRAPS |
8 | FN INJECTION | 1 | 50% | 0% | 1 | Search FN+INJECTION | Search FN+INJECTION |
9 | FOWLER NORDHEIM LEAKAGE CURRENT | 1 | 50% | 0% | 1 | Search FOWLER+NORDHEIM+LEAKAGE+CURRENT | Search FOWLER+NORDHEIM+LEAKAGE+CURRENT |
10 | GATE OFF CURRENT | 1 | 50% | 0% | 1 | Search GATE+OFF+CURRENT | Search GATE+OFF+CURRENT |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | N POLYCRYSTALLINE SILICON | 23 | 100% | 3% | 10 |
2 | RUGGED POLYSILICON | 8 | 100% | 1% | 5 |
3 | FLASH MEMORY DEVICES | 2 | 67% | 1% | 2 |
4 | HEMISPHERICAL GRAINED SI | 2 | 67% | 1% | 2 |
5 | TRENCH CAPACITORS | 2 | 67% | 1% | 2 |
6 | DOPED POLYSILICON | 2 | 26% | 1% | 5 |
7 | DOUBLE POLY STRUCTURES | 1 | 100% | 1% | 2 |
8 | HEMISPHERICAL GRAINED SILICON | 1 | 100% | 1% | 2 |
9 | THIN POLYSILICON FILM | 1 | 100% | 1% | 2 |
10 | OXIDE NITRIDE | 1 | 33% | 1% | 3 |
Journals |
Reviews |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | INTEGRATED SCI NANODEVICE BIO SYST | 1 | 50% | 0.3% | 1 |
2 | TEAM ELE OANAL ELE OCHEM | 1 | 50% | 0.3% | 1 |
3 | KIHEUNG PLANT | 0 | 33% | 0.3% | 1 |
4 | SIEMENS | 0 | 25% | 0.3% | 1 |
5 | SEMICOND PL PHYS | 0 | 20% | 0.3% | 1 |
6 | TECHNOL PROC DEV | 0 | 11% | 0.3% | 1 |
7 | PROC ENGN 4 | 0 | 100% | 0.3% | 1 |
8 | RD NONVOLATILE MEMORY DEVICE GRP | 0 | 100% | 0.3% | 1 |
9 | ROGER ADAMS 207 | 0 | 100% | 0.3% | 1 |
10 | SCI CORE TECH GRP | 0 | 100% | 0.3% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000219329 | BORON PENETRATION//REMOTE PLASMA NITRIDATION RPN//SI NITRIDE |
2 | 0.0000160977 | SONOS//CHARGE TRAPPING LAYER//FLASH MEMORY |
3 | 0.0000140673 | SIPOS//MSOS O P STRUCTURE//SEMI INSULATING POLYCRYSTALLINE SILICON |
4 | 0.0000134893 | FILM EDGE//SHAPE ENGINEERING//SILICON TECHNOLOGIES |
5 | 0.0000129188 | STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD |
6 | 0.0000121671 | POLYSILICON RESISTORS//HEAVILY DOPED POLYSILICON RESISTOR//LPCVD SI LAYERS |
7 | 0.0000112201 | POLY SI TFT//POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS POLY SI TFTS//JOINT SCI TECHNOL |
8 | 0.0000106536 | METAL INDUCED CRYSTALLIZATION//SOLID PHASE CRYSTALLIZATION//METAL INDUCED LATERAL CRYSTALLIZATION |
9 | 0.0000063131 | EXPANDED CORE FIBER//FINE WIRING//H2 REDUCTION |
10 | 0.0000062354 | INTERFACIAL SILICON EMISSION//SILICON OXIDATION//LOW TEMPERATURE SILICON OXIDATION |