Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 21642 | 354 | 19.3 | 54% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 3558 | 953 | NOVOSHAKHTINSK BRANCH//ELE OCHEM HYDROGEN ENERGY//AMORPHOUS III V SEMICONDUCTORS |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | AMORPHOUS III V SEMICONDUCTORS | Author keyword | 3 | 100% | 1% | 3 |
| 2 | GAAS1 XNX THIN FILMS | Author keyword | 3 | 100% | 1% | 3 |
| 3 | SUNAG | Address | 2 | 44% | 1% | 4 |
| 4 | LOW TEMPERATURE IMPLANTATION | Author keyword | 2 | 67% | 1% | 2 |
| 5 | TIN ION | Author keyword | 2 | 50% | 1% | 3 |
| 6 | CNR IMM MATIS | Address | 1 | 21% | 2% | 6 |
| 7 | AMORPHOUS GALLIUM ARSENIDE | Author keyword | 1 | 100% | 1% | 2 |
| 8 | NANOPOROUS GERMANIUM | Author keyword | 1 | 100% | 1% | 2 |
| 9 | PHYSICOCHIM ANAL MAT | Address | 1 | 100% | 1% | 2 |
| 10 | THIN FOIL IRRADIATION | Author keyword | 1 | 100% | 1% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | AMORPHOUS GAAS | 14 | 60% | 4% | 15 |
| 2 | IMPLANTED GASB | 12 | 86% | 2% | 6 |
| 3 | AMORPHOUS III V | 8 | 100% | 1% | 5 |
| 4 | GASB SURFACE | 8 | 100% | 1% | 5 |
| 5 | ANOMALOUS DEFECT STRUCTURE | 3 | 100% | 1% | 3 |
| 6 | GALLIUM ARSENIDE FILMS | 3 | 100% | 1% | 3 |
| 7 | AMORPHOUS GALLIUM ARSENIDE | 2 | 67% | 1% | 2 |
| 8 | IMPLANTED GE | 2 | 67% | 1% | 2 |
| 9 | RAY ANOMALOUS SCATTERING | 2 | 50% | 1% | 3 |
| 10 | GAXAS1 X | 1 | 100% | 1% | 2 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| Nanostructured germanium prepared via ion beam modification | 2013 | 5 | 57 | 35% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | SUNAG | 2 | 44% | 1.1% | 4 |
| 2 | CNR IMM MATIS | 1 | 21% | 1.7% | 6 |
| 3 | PHYSICOCHIM ANAL MAT | 1 | 100% | 0.6% | 2 |
| 4 | IMM CNR MATIS | 1 | 50% | 0.3% | 1 |
| 5 | MAT INNOVAT NANOELECT MINE GRP | 1 | 50% | 0.3% | 1 |
| 6 | MNT ELECT ENGN | 0 | 33% | 0.3% | 1 |
| 7 | PLY PHYS | 0 | 33% | 0.3% | 1 |
| 8 | ELECT PHYSICOCHIM COUCHES MINCES | 0 | 25% | 0.3% | 1 |
| 9 | FILMES SEMICOND | 0 | 20% | 0.3% | 1 |
| 10 | MICHIGAN ION BEAM | 0 | 17% | 0.3% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000152884 | STUDIO PROC ELETTROD//AMORPHOUS ANTIMONY//MAT INGN CHIM GIULIO NATTA POLITECN |
| 2 | 0.0000145932 | BULK AMORPHOUS SEMICONDUCTORS//PHASE TRANSITION WAVE//ALPHA A |
| 3 | 0.0000125571 | MESA STEP HEIGHT//LAVOISIER IREM//IMAGE ARRAY |
| 4 | 0.0000113456 | MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS |
| 5 | 0.0000104274 | ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS |
| 6 | 0.0000098328 | GASB//GALLIUM ANTIMONIDE//GAINASSB |
| 7 | 0.0000095033 | ION SPUTTERING//HBEREICH AUTOMATISIERUNG INFORMAT//ION EROSION |
| 8 | 0.0000087692 | FLUCTUATION ELECTRON MICROSCOPY//FLUCTUATION MICROSCOPY//REDUCED DENSITY FUNCTION |
| 9 | 0.0000081465 | NOVOSHAKHTINSK BRANCH//ELE OCHEM HYDROGEN ENERGY//IRON STEEL IND |
| 10 | 0.0000080589 | IBIEC//SOLID PHASE EPITAXIAL GROWTH//LATERAL SOLID PHASE EPITAXY |