Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 21508 | 358 | 15.3 | 71% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 740 | 11887 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//MICROELECTRONIC ENGINEERING//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | HYDROGEN SILSESQUIOXANE | Author keyword | 7 | 33% | 5% | 18 |
| 2 | HSQ | Author keyword | 6 | 24% | 6% | 20 |
| 3 | HSQ RESIST | Author keyword | 5 | 63% | 1% | 5 |
| 4 | HYDROGEN SILSESQUIOXANE HSQ | Author keyword | 5 | 34% | 3% | 11 |
| 5 | RESIST PATTERN COLLAPSE | Author keyword | 3 | 50% | 1% | 4 |
| 6 | ELECTRON RESISTS | Author keyword | 3 | 30% | 2% | 7 |
| 7 | SILICON MICROELECT GRP | Address | 2 | 67% | 1% | 2 |
| 8 | PATTERN COLLAPSE | Author keyword | 2 | 11% | 4% | 14 |
| 9 | POLYMER AGGREGATE | Author keyword | 1 | 31% | 1% | 4 |
| 10 | 3D NANOPATTERNING | Author keyword | 1 | 50% | 1% | 2 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | HYDROGEN SILSESQUIOXANE | 7 | 33% | 5% | 18 | Search HYDROGEN+SILSESQUIOXANE | Search HYDROGEN+SILSESQUIOXANE |
| 2 | HSQ | 6 | 24% | 6% | 20 | Search HSQ | Search HSQ |
| 3 | HSQ RESIST | 5 | 63% | 1% | 5 | Search HSQ+RESIST | Search HSQ+RESIST |
| 4 | HYDROGEN SILSESQUIOXANE HSQ | 5 | 34% | 3% | 11 | Search HYDROGEN+SILSESQUIOXANE+HSQ | Search HYDROGEN+SILSESQUIOXANE+HSQ |
| 5 | RESIST PATTERN COLLAPSE | 3 | 50% | 1% | 4 | Search RESIST+PATTERN+COLLAPSE | Search RESIST+PATTERN+COLLAPSE |
| 6 | ELECTRON RESISTS | 3 | 30% | 2% | 7 | Search ELECTRON+RESISTS | Search ELECTRON+RESISTS |
| 7 | PATTERN COLLAPSE | 2 | 11% | 4% | 14 | Search PATTERN+COLLAPSE | Search PATTERN+COLLAPSE |
| 8 | POLYMER AGGREGATE | 1 | 31% | 1% | 4 | Search POLYMER+AGGREGATE | Search POLYMER+AGGREGATE |
| 9 | 3D NANOPATTERNING | 1 | 50% | 1% | 2 | Search 3D+NANOPATTERNING | Search 3D+NANOPATTERNING |
| 10 | EVAPORATED RESIST | 1 | 100% | 1% | 2 | Search EVAPORATED+RESIST | Search EVAPORATED+RESIST |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | HSQ | 9 | 55% | 3% | 11 |
| 2 | INORGANIC SUBSTRATE | 8 | 75% | 2% | 6 |
| 3 | HYDROGEN SILSESQUIOXANE | 5 | 14% | 8% | 30 |
| 4 | DIRECT PEELING METHOD | 2 | 67% | 1% | 2 |
| 5 | HYDROGEN SILSESQUIOXANE RESIST | 2 | 50% | 1% | 3 |
| 6 | RESIST PATTERN | 2 | 31% | 1% | 5 |
| 7 | RESIST PATTERN COLLAPSE | 1 | 25% | 1% | 5 |
| 8 | PATTERN COLLAPSE | 1 | 16% | 2% | 8 |
| 9 | NANOLINE FORMATION | 1 | 40% | 1% | 2 |
| 10 | LINEWIDTH FLUCTUATIONS | 1 | 17% | 1% | 4 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art | 2009 | 125 | 75 | 33% |
| A Review of the Properties and Applications of Poly (Methyl Methacrylate) (PMMA) | 2015 | 0 | 66 | 2% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | SILICON MICROELECT GRP | 2 | 67% | 0.6% | 2 |
| 2 | CLEAN TRACK BU | 1 | 100% | 0.6% | 2 |
| 3 | AMICA | 1 | 13% | 1.7% | 6 |
| 4 | CHARGED PARTICLE OPT GRP | 1 | 17% | 1.1% | 4 |
| 5 | ADV PROC 2 | 1 | 50% | 0.3% | 1 |
| 6 | KAVLI NANOSCI NANO IL | 1 | 50% | 0.3% | 1 |
| 7 | PLICAT ENGN DEV | 1 | 50% | 0.3% | 1 |
| 8 | SEMICOND FABRICAT MAT | 1 | 50% | 0.3% | 1 |
| 9 | JAMES WATT NANOFABRICAT | 1 | 22% | 0.6% | 2 |
| 10 | ELECT DEVICE OPERAT | 0 | 33% | 0.3% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000236045 | JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY//LINE EDGE ROUGHNESS//CHEMICALLY AMPLIFIED RESISTS |
| 2 | 0.0000154185 | VUV LITHOG//IMMERSION LITHOGRAPHY//LEAF ARRANGEMENT ANALYSIS |
| 3 | 0.0000139799 | PHOTOMASK//IC EQUIPMENT//PROXIMITY EFFECT CORRECTION |
| 4 | 0.0000133203 | NANOIMPRINT//NANOIMPRINT LITHOGRAPHY//UV NANOIMPRINT |
| 5 | 0.0000110565 | WETTING RIDGE//AQUATIC PROPULSION//ELASTOCAPILLARITY |
| 6 | 0.0000107987 | LADDER SILICONE SPIN ON GLASS LS SOG//POLYSILOXENE BASED FILM//SIO2 PATTERN GENERATION |
| 7 | 0.0000100463 | CURRENT SCREEN LAYER//CPP GMR//CURRENT PERPENDICULAR TO PLANE |
| 8 | 0.0000097346 | NANOPYRAMID ARRAY//DOPANT ION IMPLANTATION//FIS SUPERFICIES INTER ES |
| 9 | 0.0000095844 | PROTON BEAM WRITING//ION BEAM PLICAT//PROBE FORMING SYSTEM |
| 10 | 0.0000079043 | LASER INTERFERENCE METALLURGY//DIRECT DIGITAL MFG//JR3CN |