Class information for:
Level 1: ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
21500 358 16.5 70%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1376 7700 GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 ATOMIC HYDROGEN CLEANING Author keyword 2 43% 1% 3
2 ECR HYDROGEN PLASMA Author keyword 1 100% 1% 2
3 IN SITU VACUUM PROCESS Author keyword 1 100% 1% 2
4 ATOMIC HYDROGEN ASSISTED MOLECULAR BEAM EPITAXY Author keyword 1 50% 0% 1
5 CRACKING EFFICIENCY Author keyword 1 50% 0% 1
6 DOUBLE HETERO STRUCTURE Author keyword 1 50% 0% 1
7 EXCESS AS Author keyword 1 50% 0% 1
8 GALLIUM ARSENIDE 111A Author keyword 1 50% 0% 1
9 LOW TEMPERATURE CLEANING Author keyword 1 50% 0% 1
10 NEAR INTERFACE QUANTUM WELL Author keyword 1 50% 0% 1

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class		 LCSH search Wikipedia search
1 ATOMIC HYDROGEN CLEANING 2 43% 1% 3 Search ATOMIC+HYDROGEN+CLEANING Search ATOMIC+HYDROGEN+CLEANING
2 ECR HYDROGEN PLASMA 1 100% 1% 2 Search ECR+HYDROGEN+PLASMA Search ECR+HYDROGEN+PLASMA
3 IN SITU VACUUM PROCESS 1 100% 1% 2 Search IN+SITU+VACUUM+PROCESS Search IN+SITU+VACUUM+PROCESS
4 ATOMIC HYDROGEN ASSISTED MOLECULAR BEAM EPITAXY 1 50% 0% 1 Search ATOMIC+HYDROGEN+ASSISTED+MOLECULAR+BEAM+EPITAXY Search ATOMIC+HYDROGEN+ASSISTED+MOLECULAR+BEAM+EPITAXY
5 CRACKING EFFICIENCY 1 50% 0% 1 Search CRACKING+EFFICIENCY Search CRACKING+EFFICIENCY
6 DOUBLE HETERO STRUCTURE 1 50% 0% 1 Search DOUBLE+HETERO+STRUCTURE Search DOUBLE+HETERO+STRUCTURE
7 EXCESS AS 1 50% 0% 1 Search EXCESS+AS Search EXCESS+AS
8 GALLIUM ARSENIDE 111A 1 50% 0% 1 Search GALLIUM+ARSENIDE+111A Search GALLIUM+ARSENIDE+111A
9 LOW TEMPERATURE CLEANING 1 50% 0% 1 Search LOW+TEMPERATURE+CLEANING Search LOW+TEMPERATURE+CLEANING
10 NEAR INTERFACE QUANTUM WELL 1 50% 0% 1 Search NEAR+INTERFACE+QUANTUM+WELL Search NEAR+INTERFACE+QUANTUM+WELL

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 DISLOCATION DENSITY GAAS 15 82% 3% 9
2 MOVPE REGROWTH 4 67% 1% 4
3 BEAM EPITAXIAL REGROWTH 4 75% 1% 3
4 OXIDE DESORPTION 4 50% 2% 6
5 SUBSTRATE OXIDE DESORPTION 4 75% 1% 3
6 RESONANCE ECR PLASMA 2 67% 1% 2
7 SITU CHARACTERIZATION 2 67% 1% 2
8 ARSENIC PASSIVATION 2 50% 1% 3
9 NONUNIVERSAL CONDUCTANCE QUANTIZATION 1 38% 1% 3
10 INP SURFACES 1 16% 2% 7

Journals

Reviews

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 STRUCT FUNCT PROPERTY GRP 1 50% 0.3% 1
2 SUR E THIN FILM STAND SECT 1 50% 0.3% 1
3 TOSHIBA EUROPE LTD 1 25% 0.6% 2
4 NANOTECHNOL ENGN GRP 0 33% 0.3% 1
5 CHIM INGN CHIM MAT 0 25% 0.3% 1
6 EMERGING DEVICES TECHNOL 0 20% 0.3% 1
7 MAT FINAL SPECIF 0 17% 0.3% 1
8 SEMICOND SUR E PHYS 0 14% 0.3% 1
9 NANOELE ON ABORAT 0 100% 0.3% 1
10 REPUBL CHINA TAIWAN INT PROGRAM 0 100% 0.3% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000182835 SELECTIVE AREA GROWTH//TERTIARYBUTYLCHLORIDE//SELECTIVE EPITAXY
2 0.0000172587 SULFUR PASSIVATION//PHOSPHIDIZATION//PHOSPHINE PLASMA
3 0.0000161079 FUJIMI KU//GAAS OXIDE//REACTIVE ION BEAM ETCHING
4 0.0000146990 ELECTRON COUNTING MODEL//SUR E STUDY//GA ADATOM
5 0.0000129029 SEMICOND INTEGRATED CIRCUIT//SCI TECH FES SAIS//HIGFET
6 0.0000110808 OVAL DEFECTS//SEEIE//GA AS BI SOLUTION
7 0.0000110429 GAAS MOSFET//INTERFACE CONTROL LAYER//III V MOSFET
8 0.0000109665 ELECTROMAGNETIC GREENS FUNCTION//COUPLED PLASMON PHONON MODE//EDUC MACROMOLEC
9 0.0000109021 INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM
10 0.0000098936 WEBSTER//ADIABATIC BOND CHARGE MODEL//INAS110