Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
21443 | 360 | 14.7 | 67% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
178 | 21135 | INTEGRATED FERROELECTRICS//FERROELECTRIC THIN FILMS//PZT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | HYDROGEN INDUCED DEGRADATION | Author keyword | 9 | 83% | 1% | 5 |
2 | SELECTIVELY NUCLEATED LATERAL CRYSTALLIZATION | Author keyword | 6 | 100% | 1% | 4 |
3 | FORMING GAS ANNEAL | Author keyword | 3 | 50% | 1% | 5 |
4 | FORMING GAS | Author keyword | 2 | 32% | 2% | 6 |
5 | LA DOPED BISMUTH TITANATE | Author keyword | 2 | 67% | 1% | 2 |
6 | O 3 TEOS | Author keyword | 2 | 67% | 1% | 2 |
7 | SIO2 CAPPING | Author keyword | 2 | 67% | 1% | 2 |
8 | FORMING GAS ANNEALING | Author keyword | 2 | 22% | 2% | 6 |
9 | FERAM TECHNOL | Address | 1 | 100% | 1% | 2 |
10 | MAT DEVICE SECTOR | Address | 1 | 17% | 2% | 7 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HYDROGEN INDUCED DEGRADATION | 9 | 83% | 1% | 5 | Search HYDROGEN+INDUCED+DEGRADATION | Search HYDROGEN+INDUCED+DEGRADATION |
2 | SELECTIVELY NUCLEATED LATERAL CRYSTALLIZATION | 6 | 100% | 1% | 4 | Search SELECTIVELY+NUCLEATED+LATERAL+CRYSTALLIZATION | Search SELECTIVELY+NUCLEATED+LATERAL+CRYSTALLIZATION |
3 | FORMING GAS ANNEAL | 3 | 50% | 1% | 5 | Search FORMING+GAS+ANNEAL | Search FORMING+GAS+ANNEAL |
4 | FORMING GAS | 2 | 32% | 2% | 6 | Search FORMING+GAS | Search FORMING+GAS |
5 | LA DOPED BISMUTH TITANATE | 2 | 67% | 1% | 2 | Search LA+DOPED+BISMUTH+TITANATE | Search LA+DOPED+BISMUTH+TITANATE |
6 | O 3 TEOS | 2 | 67% | 1% | 2 | Search O+3+TEOS | Search O+3+TEOS |
7 | SIO2 CAPPING | 2 | 67% | 1% | 2 | Search SIO2+CAPPING | Search SIO2+CAPPING |
8 | FORMING GAS ANNEALING | 2 | 22% | 2% | 6 | Search FORMING+GAS+ANNEALING | Search FORMING+GAS+ANNEALING |
9 | HYDROGEN ANNEALING | 1 | 12% | 3% | 9 | Search HYDROGEN+ANNEALING | Search HYDROGEN+ANNEALING |
10 | HYDROGEN DAMAGE | 1 | 17% | 1% | 5 | Search HYDROGEN+DAMAGE | Search HYDROGEN+DAMAGE |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | HYDROGEN INDUCED DEGRADATION | 30 | 69% | 7% | 25 |
2 | FERROELECTRIC PBZR TIO 3 | 20 | 67% | 5% | 18 |
3 | WATER INDUCED DEGRADATION | 15 | 82% | 3% | 9 |
4 | TIO 3 CAPACITORS | 15 | 71% | 3% | 12 |
5 | TIO 3 | 13 | 53% | 5% | 17 |
6 | PBZR TIO 3 | 10 | 23% | 11% | 40 |
7 | THIN FILM CAPACITORS | 9 | 20% | 11% | 40 |
8 | INDUCED DEGRADATION | 7 | 13% | 14% | 50 |
9 | PBZR | 3 | 11% | 8% | 30 |
10 | FORMING GAS | 2 | 40% | 1% | 4 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Capacitor-on-metal/via-stacked-plug (CMVP) memory cell technologies and application to a nonvolatile SRAM | 2004 | 0 | 1 | 100% |
The current status of FeRAM | 2004 | 1 | 2 | 50% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | FERAM TECHNOL | 1 | 100% | 0.6% | 2 |
2 | MAT DEVICE SECTOR | 1 | 17% | 1.9% | 7 |
3 | MEMORY DEVICES | 1 | 40% | 0.6% | 2 |
4 | ADV MAT FRAM DEV | 1 | 50% | 0.3% | 1 |
5 | ANAL 1 | 1 | 50% | 0.3% | 1 |
6 | ELE OSTAT DIELECT MAT | 1 | 50% | 0.3% | 1 |
7 | FERAM TEAM | 1 | 50% | 0.3% | 1 |
8 | NEW MARKING SYST | 1 | 50% | 0.3% | 1 |
9 | SOLUT SALES OPERAT UNIT 1 | 1 | 50% | 0.3% | 1 |
10 | SYST LSI OPERAT UNIT | 1 | 50% | 0.3% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000255367 | MEMS PATTERNING//ETCHING DAMAGE//RUOX PT |
2 | 0.0000150886 | PZT//PZT THIN FILMS//INTEGRATED FERROELECTRICS |
3 | 0.0000136765 | BI4TI3O12//SRBI2TA2O9//BISMUTH TITANATE |
4 | 0.0000116217 | TUNNELING ACOUSTIC MICROSCOPY//SAW IMAGING//MICRODISPLACEMENT MEASUREMENT |
5 | 0.0000084763 | DOMAIN SWITCHING//CERAM MECH ENGN//FERROELECTRIC CERAMICS |
6 | 0.0000083109 | MFIS//FERROELECTRIC GATE FET//MFIS STRUCTURE |
7 | 0.0000073551 | RADIATION INDUCED CHARGES//AF IOFFE PTI//RETAINED POLARIZATION |
8 | 0.0000065688 | BST//BARIUM STRONTIUM TITANATE//TUNABILITY |
9 | 0.0000061641 | ZINC TITANATE//ZNTIO3//ZN2TIO4 |
10 | 0.0000054174 | RESONANCE OSCILLATION//PBNB ZR TIO 3//LEHRSTUHL THEORET PHYS |