Class information for:
Level 1: IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE//P N JUNCTION LEAKAGE

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
20142 411 15.7 37%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
2557 3267 INTERFACIAL SILICON EMISSION//SILICON OXIDATION//GENIE URBAIN ENVIRONM

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 IRRADIATED P N JUNCTION LEAKAGE Author keyword 1 100% 0% 2
2 JUNCTION SHAPE Author keyword 1 100% 0% 2
3 P N JUNCTION LEAKAGE Author keyword 1 100% 0% 2
4 PHOTOELECTRIC MOSFET Author keyword 1 100% 0% 2
5 SI JUNCTION DIODES Author keyword 1 100% 0% 2
6 SILICON SUBSTRATE HARDENING Author keyword 1 100% 0% 2
7 SURFACE GENERATION VELOCITY Author keyword 1 30% 1% 3
8 MAT PL SCI Address 1 11% 2% 7
9 CARRIER LIFETIMES Author keyword 1 19% 1% 4
10 P N JUNCTION DIODES Author keyword 1 33% 0% 2

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class		 LCSH search Wikipedia search
1 IRRADIATED P N JUNCTION LEAKAGE 1 100% 0% 2 Search IRRADIATED+P+N+JUNCTION+LEAKAGE Search IRRADIATED+P+N+JUNCTION+LEAKAGE
2 JUNCTION SHAPE 1 100% 0% 2 Search JUNCTION+SHAPE Search JUNCTION+SHAPE
3 P N JUNCTION LEAKAGE 1 100% 0% 2 Search P+N+JUNCTION+LEAKAGE Search P+N+JUNCTION+LEAKAGE
4 PHOTOELECTRIC MOSFET 1 100% 0% 2 Search PHOTOELECTRIC+MOSFET Search PHOTOELECTRIC+MOSFET
5 SI JUNCTION DIODES 1 100% 0% 2 Search SI+JUNCTION+DIODES Search SI+JUNCTION+DIODES
6 SILICON SUBSTRATE HARDENING 1 100% 0% 2 Search SILICON+SUBSTRATE+HARDENING Search SILICON+SUBSTRATE+HARDENING
7 SURFACE GENERATION VELOCITY 1 30% 1% 3 Search SURFACE+GENERATION+VELOCITY Search SURFACE+GENERATION+VELOCITY
8 CARRIER LIFETIMES 1 19% 1% 4 Search CARRIER+LIFETIMES Search CARRIER+LIFETIMES
9 P N JUNCTION DIODES 1 33% 0% 2 Search P+N+JUNCTION+DIODES Search P+N+JUNCTION+DIODES
10 ADJUSTMENT TECHNIQUE OF SPECTRUM BAND 1 50% 0% 1 Search ADJUSTMENT+TECHNIQUE+OF+SPECTRUM+BAND Search ADJUSTMENT+TECHNIQUE+OF+SPECTRUM+BAND

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 CONVECTIVE CURRENTS 3 100% 1% 3
2 EMISSION CURRENTS 3 100% 1% 3
3 IMPLEMENTATION PRINCIPLES 3 100% 1% 3
4 PERIPHERAL CURRENT ANALYSIS 2 67% 0% 2
5 PULSED MOS CAPACITOR 2 67% 0% 2
6 SEMICONDUCTOR INSULATOR INTERFACE 2 67% 0% 2
7 PULSED MIS CAPACITOR 2 50% 1% 3
8 GENERATION LIFETIME 2 26% 1% 5
9 NP JUNCTION DIODES 1 38% 1% 3
10 RECOMBINATION LIFETIME 1 21% 1% 5

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
THE PULSED MIS CAPACITOR - A CRITICAL-REVIEW 1985 53 8 100%
Separation of dynamic current-voltage characteristics (DCVCs) of an oxide film from the DCVC of ionic currents in a metal oxide semiconductor structure: Universal quasi-static DCVCs of a film 2006 0 7 86%
ELECTRICAL CHARACTERIZATION OF SEMICONDUCTOR-MATERIALS AND DEVICES 1986 0 4 50%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 MAT PL SCI 1 11% 1.7% 7
2 ADV EDRAM 1 50% 0.2% 1
3 INVEST DISPOSIT SEMICONDUCTO 1 50% 0.2% 1
4 INTER E COMPOSANTS MICROELECT 0 33% 0.2% 1
5 YIELD ENHANCEMENT TEAM 0 33% 0.2% 1
6 IST NUOVI MAT ELETTRON 0 14% 0.2% 1
7 SHU SOLAR E PV 0 14% 0.2% 1
8 MICRODEVICES 0 13% 0.2% 1
9 ELE ON ELE OTECH 0 100% 0.2% 1
10 ELECT ENGN ESAT INTEGRATED SYST 0 100% 0.2% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000199519 HITACHI ADM//SOLAR CELL METALLIZATION//
2 0.0000147427 EMISSION RATE SPECTRUM//CAPACITANCE TRANSIENTS//DLTS RESOLUTION
3 0.0000120490 SIDEWALL OXIDATION//COMPUTAT ELECT//MEMORY DEVICE BUSINESS
4 0.0000091349 NONIONIZING ENERGY LOSS NIEL//DISPLACEMENT DAMAGE DOSE//NONIONIZING ENERGY LOSS
5 0.0000090647 AC SURFACE PHOTOVOLTAGE//SCANNING PHOTON MICROSCOPE//METAL AIR INSULATOR SEMICONDUCTOR
6 0.0000077257 OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON
7 0.0000073010 MOS TUNNELING DIODE//ELECTRON HOLE PLASMA RECOMBINATION//LATERAL NONUNIFORMITY LNU
8 0.0000070931 CAPACITORLESS DRAM//1T DRAM//CAPACITORLESS 1T DRAM
9 0.0000066328 GETTERING//GETTERING EFFICIENCY//SI AU
10 0.0000065428 ELECTRICAL PASSIVATION OF STRUCTURAL DEFECTS//GAAS DIODE//TRIPLE CRYSTAL DIFFRACTOMETRY