Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
20131 | 411 | 10.5 | 38% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
3206 | 1558 | 12CAO CENTER DOT 7AL2O3//C12A7//POTASSIUM ANIONS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | VIBRATING CAPACITOR | Author keyword | 5 | 54% | 2% | 7 |
2 | SEMICOND EQUIPMENT OPERAT | Address | 2 | 40% | 1% | 4 |
3 | SURFACE VOLTAGE | Author keyword | 2 | 31% | 1% | 5 |
4 | CHARGE PCD | Author keyword | 1 | 50% | 0% | 1 |
5 | METAL OXIDE SERNICONDUCTOR | Author keyword | 1 | 50% | 0% | 1 |
6 | MOS CAPACITOR BREAKDOWN | Author keyword | 1 | 50% | 0% | 1 |
7 | SIO2 SI STRUCTURES | Author keyword | 1 | 50% | 0% | 1 |
8 | STRUCTURE PARAMETER OPTIMIZATION | Author keyword | 1 | 50% | 0% | 1 |
9 | DEUTERIUM PASSIVATION | Author keyword | 0 | 33% | 0% | 1 |
10 | INTERFACE TRAP LEVEL DENSITY | Author keyword | 0 | 33% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | VIBRATING CAPACITOR | 2 | 40% | 1% | 4 |
2 | IMPLANTERS | 2 | 43% | 1% | 3 |
3 | BF2 IMPLANTATION | 1 | 40% | 0% | 2 |
4 | CURRENT IMPLANTERS | 1 | 50% | 0% | 1 |
5 | ENERGY CONTAMINATION | 1 | 50% | 0% | 1 |
6 | ELECTRON BEAM ENHANCEMENT | 1 | 29% | 0% | 2 |
7 | DOSING ACCURACY | 0 | 11% | 0% | 2 |
8 | SCAN PATTERN | 0 | 100% | 0% | 1 |
9 | VARIAN 180XP | 0 | 100% | 0% | 1 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
REVIEW OF SECONDARY-ION MASS-SPECTROMETRY CHARACTERIZATION OF CONTAMINATION ASSOCIATED WITH ION-IMPLANTATION | 1994 | 16 | 42 | 38% |
CANAL RAYS TO ION-IMPLANTATION - 1886-1986 | 1987 | 0 | 3 | 67% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SEMICOND EQUIPMENT OPERAT | 2 | 40% | 1.0% | 4 |
2 | SIBERIAN BRANCH RUSSIAN | 0 | 33% | 0.2% | 1 |
3 | ELE OPHYS IL | 0 | 25% | 0.2% | 1 |
4 | MEMORY MFG OPERAT | 0 | 25% | 0.2% | 1 |
5 | MOS4YOU | 0 | 20% | 0.2% | 1 |
6 | SUNGKYUNKWAN ADV NANO TECHNOL | 0 | 10% | 0.2% | 1 |
7 | CHAIR ELECT IL | 0 | 100% | 0.2% | 1 |
8 | CHEM TECHNOL RARE ELEMENTS MINERAL SOURC | 0 | 100% | 0.2% | 1 |
9 | SEMICOND EQUIPMENT OPEAT | 0 | 100% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000123144 | RANGE PARAMETERS//SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION |
2 | 0.0000116537 | ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING |
3 | 0.0000107399 | NEGATIVE ION IMPLANTATION//DELTA LAYERED NANOPARTICLES//AB INITIO MOLECULAR ORBITAL METHODS |
4 | 0.0000059072 | MODERN FLUID PHYS//KINETIC MODEL EQUATION//PROP DIRECTORATE AFRL RZSA |
5 | 0.0000052400 | ECR PLASMA//UNIFORM PLASMA//MAGNETIC MULTIPOLE FIELD |
6 | 0.0000052085 | RFQ ACCELERATOR//RFQ//SFRFQ |
7 | 0.0000051906 | PHASE SCAN//MICRO TELECOMMUNICATIONS COMPUTING ARCHITECTURE//IQ DETECTION |
8 | 0.0000051692 | SIMOX//BURIED OXIDE LAYER//CONTACTLESS I V METHOD |
9 | 0.0000044184 | PHOTOCARRIER RADIOMETRY//CADIFT//PHOTOTHERMAL OPTOELECT DIAGNOST S |
10 | 0.0000037843 | TRANSIENT ENHANCED DIFFUSION//SWAMP//PAIR DIFFUSION MODEL |