Class information for:
Level 1: GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
200 3886 20.0 76%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
33 32935 GAN//NITRIDES//GALLIUM NITRIDE

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 GAN Author keyword 78 11% 17% 656
2 HYDRIDE VAPOR PHASE EPITAXY Author keyword 77 48% 3% 118
3 AMMONOTHERMAL CRYSTAL GROWTH Author keyword 45 90% 0% 19
4 AMMONOTHERMAL GROWTH Author keyword 38 89% 0% 17
5 NITRIDES Author keyword 36 10% 9% 332
6 HVPE Author keyword 36 37% 2% 77
7 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH Journal 32 24% 3% 119
8 GALLIUM NITRIDE Author keyword 31 13% 6% 224
9 HYDRIDE VAPOR PHASE EPITAXY HVPE Author keyword 30 79% 0% 19
10 HIGH PRESSURE GROWTH FROM SOLUTION Author keyword 27 92% 0% 11

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 GAN 78 11% 17% 656 Search GAN Search GAN
2 HYDRIDE VAPOR PHASE EPITAXY 77 48% 3% 118 Search HYDRIDE+VAPOR+PHASE+EPITAXY Search HYDRIDE+VAPOR+PHASE+EPITAXY
3 AMMONOTHERMAL CRYSTAL GROWTH 45 90% 0% 19 Search AMMONOTHERMAL+CRYSTAL+GROWTH Search AMMONOTHERMAL+CRYSTAL+GROWTH
4 AMMONOTHERMAL GROWTH 38 89% 0% 17 Search AMMONOTHERMAL+GROWTH Search AMMONOTHERMAL+GROWTH
5 NITRIDES 36 10% 9% 332 Search NITRIDES Search NITRIDES
6 HVPE 36 37% 2% 77 Search HVPE Search HVPE
7 GALLIUM NITRIDE 31 13% 6% 224 Search GALLIUM+NITRIDE Search GALLIUM+NITRIDE
8 HYDRIDE VAPOR PHASE EPITAXY HVPE 30 79% 0% 19 Search HYDRIDE+VAPOR+PHASE+EPITAXY+HVPE Search HYDRIDE+VAPOR+PHASE+EPITAXY+HVPE
9 HIGH PRESSURE GROWTH FROM SOLUTION 27 92% 0% 11 Search HIGH+PRESSURE+GROWTH+FROM+SOLUTION Search HIGH+PRESSURE+GROWTH+FROM+SOLUTION
10 SEMICONDUCTING GALLIUM COMPOUNDS 16 25% 1% 56 Search SEMICONDUCTING+GALLIUM+COMPOUNDS Search SEMICONDUCTING+GALLIUM+COMPOUNDS

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 GALLIUM NITRIDE 95 17% 13% 497
2 THREADING DISLOCATIONS 77 38% 4% 159
3 VAPOR PHASE EPITAXY 76 13% 15% 567
4 AIN BUFFER LAYER 70 53% 2% 92
5 SAPPHIRE 64 11% 15% 574
6 HVPE 54 48% 2% 83
7 BULK GAN 47 46% 2% 75
8 BUFFER LAYER 39 15% 6% 247
9 HIGH N 2 PRESSURE 38 93% 0% 14
10 DISLOCATION DENSITY 31 22% 3% 123

Journals


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 32 24% 3% 119

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
III-nitrides: Growth, characterization, and properties 2000 775 133 38%
Metal organic vapour phase epitaxy of GaN and lateral overgrowth 2004 160 195 74%
Substrates for gallium nitride epitaxy 2002 398 343 40%
X-ray diffraction of III-nitrides 2009 225 210 28%
Epitaxial lateral overgrowth of GaN 2001 126 119 77%
Dislocations and their reduction in GaN 2010 26 58 84%
Growth and applications of Group III nitrides 1998 766 221 32%
Gallium nitride bulk crystal growth processes: A review 2006 51 80 74%
Properties of GaN and related compounds studied by means of Raman scattering 2002 314 108 22%
Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode 2006 55 36 50%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ETUD RECH MAT 13 37% 0.7% 28
2 RIM 7 28% 0.5% 21
3 OE TEAM 6 80% 0.1% 4
4 UNIV RECH ALENCON 6 71% 0.1% 5
5 STRUCT INTER ES FONCT COUCHES MINCES 6 58% 0.2% 7
6 CENT SOLAR ENERGY 5 63% 0.1% 5
7 NJC TECHNOL 5 55% 0.2% 6
8 RECH PROPRIETES MAT NOUVEAUX 5 44% 0.2% 8
9 SEMICOND SCI TECHNOL 5 10% 1.1% 42
10 ERATO JST UCSB GRP 4 75% 0.1% 3

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000264597 GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING
2 0.0000259288 SI111 SUBSTRATES//SI111 SUBSTRATE//ALN BUFFER
3 0.0000258661 EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS
4 0.0000204622 LIGAO2//AMORPHOUS GAN//NON POLAR NITRIDES
5 0.0000199503 OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//YELLOW LUMINESCENCE//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
6 0.0000175986 CUBIC GAN//FB PHYS 6//HEXAGONAL GAN
7 0.0000153522 SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN
8 0.0000148053 A PLANE GAN//LED TECHNOL//NONPOLAR
9 0.0000124360 SOCIOTECHNO SCI TECHNOL//N GAN//GALLIUM HYDROXIDE
10 0.0000114907 P INGAN//GAN SIC HETEROJUNCTION//COMMON EMITTER