Class information for:
Level 1: OXIDE TRAPPED CHARGE//ELDRS//TOTAL IONIZING DOSE

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
1989 2332 21.1 59%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 OXIDE TRAPPED CHARGE Author keyword 38 63% 2% 38
2 ELDRS Author keyword 29 67% 1% 26
3 TOTAL IONIZING DOSE Author keyword 28 36% 3% 64
4 ENHANCED LOW DOSE RATE SENSITIVITY Author keyword 26 87% 1% 13
5 ENHANCED LOW DOSE RATE SENSITIVITY ELDRS Author keyword 25 77% 1% 17
6 GAIN DEGRADATION Author keyword 23 72% 1% 18
7 TOTAL DOSE EFFECT Author keyword 21 85% 0% 11
8 TOTAL DOSE Author keyword 17 34% 2% 41
9 TOTAL IONIZING DOSE TID Author keyword 16 40% 1% 31
10 TOTAL DOSE EFFECTS Author keyword 15 50% 1% 22

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 OXIDE TRAPPED CHARGE 38 63% 2% 38 Search OXIDE+TRAPPED+CHARGE Search OXIDE+TRAPPED+CHARGE
2 ELDRS 29 67% 1% 26 Search ELDRS Search ELDRS
3 TOTAL IONIZING DOSE 28 36% 3% 64 Search TOTAL+IONIZING+DOSE Search TOTAL+IONIZING+DOSE
4 ENHANCED LOW DOSE RATE SENSITIVITY 26 87% 1% 13 Search ENHANCED+LOW+DOSE+RATE+SENSITIVITY Search ENHANCED+LOW+DOSE+RATE+SENSITIVITY
5 ENHANCED LOW DOSE RATE SENSITIVITY ELDRS 25 77% 1% 17 Search ENHANCED+LOW+DOSE+RATE+SENSITIVITY+ELDRS Search ENHANCED+LOW+DOSE+RATE+SENSITIVITY+ELDRS
6 GAIN DEGRADATION 23 72% 1% 18 Search GAIN+DEGRADATION Search GAIN+DEGRADATION
7 TOTAL DOSE EFFECT 21 85% 0% 11 Search TOTAL+DOSE+EFFECT Search TOTAL+DOSE+EFFECT
8 TOTAL DOSE 17 34% 2% 41 Search TOTAL+DOSE Search TOTAL+DOSE
9 TOTAL IONIZING DOSE TID 16 40% 1% 31 Search TOTAL+IONIZING+DOSE+TID Search TOTAL+IONIZING+DOSE+TID
10 TOTAL DOSE EFFECTS 15 50% 1% 22 Search TOTAL+DOSE+EFFECTS Search TOTAL+DOSE+EFFECTS

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 GAIN DEGRADATION 112 85% 3% 60
2 HARDNESS ASSURANCE 81 75% 2% 58
3 INTERFACE TRAP FORMATION 58 73% 2% 45
4 MOBILE PROTONS 45 94% 1% 16
5 INDUCED GAIN DEGRADATION 38 84% 1% 21
6 BORDER TRAPS 32 41% 3% 62
7 PB DEFECTS 32 85% 1% 17
8 MOS DEVICES 31 25% 5% 110
9 ELDRS 31 92% 1% 12
10 ISOLATION OXIDES 30 100% 1% 12

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Total ionizing dose effects in MOS oxides and devices 2003 194 98 87%
THE SILICON SILICON-DIOXIDE SYSTEM - ITS MICROSTRUCTURE AND IMPERFECTIONS 1994 245 67 52%
Radiation effects and hardening of MOS technology: Devices and circuits 2003 100 290 74%
Total ionizing dose effects in bipolar devices and circuits 2003 43 72 96%
Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides 1996 98 86 52%
1/F NOISE AND RADIATION EFFECTS IN MOS DEVICES 1994 92 75 73%
Effects of hydrogen transport and reactions on microelectronics radiation response and reliability 2002 52 177 63%
Total-dose radiation hardness assurance 2003 32 114 96%
Influence of ionizing radiation and hot carrier injection on metal-oxide-semiconductor transistors 2008 6 87 62%
Analysis of Effective Gate Length Modulation by X-Ray Irradiation for Fully Depleted SOI p-MOSFETs 2015 0 16 63%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ELECT ENGN NIKOLA TESLA 5 63% 0.2% 5
2 SPACE MISSION TECHNOL 4 67% 0.2% 4
3 IBW RELIC 4 75% 0.1% 3
4 FIS DISPOSIT MICROELECT 2 67% 0.1% 2
5 ETUD TELECOMMUN 2 11% 0.6% 14
6 CEM2 2 11% 0.6% 15
7 1332 1 100% 0.1% 2
8 CARACTERISAT COMPOSANTS SEMICOND 1 50% 0.1% 2
9 COMMERCIAL SYST 1 100% 0.1% 2
10 IES UMR CNRS UM2 5214 1 100% 0.1% 2

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000233971 SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP
2 0.0000217173 RADFET//IMPLANTABLE DOSIMETER//DEVICE PHYS MICROELECT
3 0.0000148830 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//CHRISTIAN DOPPLER TCAD
4 0.0000139345 SID4//DEUTERIUM D ANNEALING//TRAP CREATION
5 0.0000124410 STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD
6 0.0000104877 ELECTRICALLY DETECTED MAGNETIC RESONANCE//EDMR//BERLIN JOINT EPR
7 0.0000090937 SIMOX//BURIED OXIDE LAYER//CONTACTLESS I V METHOD
8 0.0000086279 NONIONIZING ENERGY LOSS NIEL//DISPLACEMENT DAMAGE DOSE//NONIONIZING ENERGY LOSS
9 0.0000083455 TRANSPARENT ELE OACT MAT PROJECT//PHYS ASTRON SCI//UDR CAGLIARI
10 0.0000074304 HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION