Class information for:
Level 1: FLUCTUAT//PLANAR GUNN DIODE//ELLIPSOIDAL VALLEYS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
19750 427 19.9 68%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
33 32935 GAN//NITRIDES//GALLIUM NITRIDE

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 FLUCTUAT Address 19 70% 4% 16
2 PLANAR GUNN DIODE Author keyword 6 71% 1% 5
3 ELLIPSOIDAL VALLEYS Author keyword 6 100% 1% 4
4 MINIMUM ACCELERATION LENGTH Author keyword 4 75% 1% 3
5 RETARDED LANGEVIN EQUATION RLE Author keyword 4 75% 1% 3
6 VELOCITY FIELD CHARACTERISTIC Author keyword 3 100% 1% 3
7 ENSEMBLE MONTE CARLO Author keyword 2 29% 2% 7
8 GUNN DEVICES Author keyword 2 22% 1% 6
9 CELLULAR MONTE CARLO Author keyword 1 100% 0% 2
10 GAN HETEROSTRUCTURE Author keyword 1 50% 0% 2

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class		 LCSH search Wikipedia search
1 PLANAR GUNN DIODE 6 71% 1% 5 Search PLANAR+GUNN+DIODE Search PLANAR+GUNN+DIODE
2 ELLIPSOIDAL VALLEYS 6 100% 1% 4 Search ELLIPSOIDAL+VALLEYS Search ELLIPSOIDAL+VALLEYS
3 MINIMUM ACCELERATION LENGTH 4 75% 1% 3 Search MINIMUM+ACCELERATION+LENGTH Search MINIMUM+ACCELERATION+LENGTH
4 RETARDED LANGEVIN EQUATION RLE 4 75% 1% 3 Search RETARDED+LANGEVIN+EQUATION+RLE Search RETARDED+LANGEVIN+EQUATION+RLE
5 VELOCITY FIELD CHARACTERISTIC 3 100% 1% 3 Search VELOCITY+FIELD+CHARACTERISTIC Search VELOCITY+FIELD+CHARACTERISTIC
6 ENSEMBLE MONTE CARLO 2 29% 2% 7 Search ENSEMBLE+MONTE+CARLO Search ENSEMBLE+MONTE+CARLO
7 GUNN DEVICES 2 22% 1% 6 Search GUNN+DEVICES Search GUNN+DEVICES
8 CELLULAR MONTE CARLO 1 100% 0% 2 Search CELLULAR+MONTE+CARLO Search CELLULAR+MONTE+CARLO
9 GAN HETEROSTRUCTURE 1 50% 0% 2 Search GAN+HETEROSTRUCTURE Search GAN+HETEROSTRUCTURE
10 HIGH ELECTRIC FIELD EFFECTS 1 50% 0% 2 Search HIGH+ELECTRIC+FIELD+EFFECTS Search HIGH+ELECTRIC+FIELD+EFFECTS

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MICROWAVE POWER GENERATION 15 82% 2% 9
2 RESOLVED ELECTROABSORPTION MEASUREMENT 13 71% 2% 10
3 BIASED ALGAN GAN 9 83% 1% 5
4 ALGAN ALN GAN CHANNELS 7 67% 1% 6
5 NDR DIODE 4 75% 1% 3
6 PHASE GAN 4 75% 1% 3
7 PHONON LIFETIME 4 75% 1% 3
8 MICROWAVE NOISE 3 30% 2% 9
9 TIME RESOLVED RAMAN 3 28% 2% 9
10 HOT PHONONS 3 30% 2% 7

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors 2013 5 37 62%
Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review 2014 0 132 20%
A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review 2015 0 202 17%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 FLUCTUAT 19 70% 3.7% 16
2 PLICAT SPECIF INTEGRATED CIRCUIT 1 27% 0.7% 3
3 STATE KEY DISCIPLINE WIDE BAND G SEMICOND T 1 14% 1.4% 6
4 AMSRL SE EM 1 19% 0.9% 4
5 DEF POWER 1 50% 0.2% 1
6 ERC 227 1 50% 0.2% 1
7 ICHTEN GRENZFLACHEN CNI 1 50% 0.2% 1
8 SATELLITE VENTURE 1 50% 0.2% 1
9 SEMICOND CHARACTERIZAT 1 50% 0.2% 1
10 THIN FILMS INTE ES 1 50% 0.2% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000176275 ADV STUDY RADIOPHYS ELECT//IMPATT DIODES//LARGE SIGNAL SIMULATION
2 0.0000169916 ALGAN GAN//HIGH ELECTRON MOBILITY TRANSISTOR HEMT//CURRENT COLLAPSE
3 0.0000158462 ENERGY TRANSPORT MODEL//HYDRODYNAMICAL MODELS//BOLTZMANN POISSON SYSTEM
4 0.0000142161 MICRO PHOTONELECT//HOT ELECTRON SCATTERING//LO PHONON EMISSION
5 0.0000141052 THREE TERMINAL BALLISTIC JUNCTIONS//BALLISTIC RECTIFICATION//BALLISTIC DEVICES
6 0.0000135846 EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS
7 0.0000125897 4H SIC MESFET//MESFET//MESFETS
8 0.0000119944 BACKWARD DIODES//MILLIMETER WAVE DETECTORS//BULK BARRIER DIODES
9 0.0000115583 IMPACT IONIZATION//AVALANCHE PHOTODIODES APDS//AVALANCHE PHOTODIODE APD
10 0.0000103161 BLOCH GRUNEISEN REGIME//THERMOMAGNETIC EFFECT//CONFINED AND INTERFACE PHONONS