Class information for:
Level 1: DRAIN CURRENT TRANSIENT//FUNCT ELEMENTS CONTROL SYST//GATE LAG

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
19720 428 14.3 45%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1771 5849 LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 DRAIN CURRENT TRANSIENT Author keyword 7 67% 1% 6
2 FUNCT ELEMENTS CONTROL SYST Address 6 50% 2% 8
3 GATE LAG Author keyword 5 35% 3% 11
4 TRANSCONDUCTANCE DISPERSION Author keyword 3 100% 1% 3
5 GAAS MESFET Author keyword 2 14% 4% 16
6 SIDEGATING Author keyword 2 67% 0% 2
7 GAAS MESFETS Author keyword 2 30% 1% 6
8 BACKGATING EFFECT Author keyword 1 50% 0% 2
9 CHANNEL SUBSTRATE INTERFACE Author keyword 1 100% 0% 2
10 CHANNEL SUBSTRATE JUNCTION Author keyword 1 100% 0% 2

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 DRAIN CURRENT TRANSIENT 7 67% 1% 6 Search DRAIN+CURRENT+TRANSIENT Search DRAIN+CURRENT+TRANSIENT
2 GATE LAG 5 35% 3% 11 Search GATE+LAG Search GATE+LAG
3 TRANSCONDUCTANCE DISPERSION 3 100% 1% 3 Search TRANSCONDUCTANCE+DISPERSION Search TRANSCONDUCTANCE+DISPERSION
4 GAAS MESFET 2 14% 4% 16 Search GAAS+MESFET Search GAAS+MESFET
5 SIDEGATING 2 67% 0% 2 Search SIDEGATING Search SIDEGATING
6 GAAS MESFETS 2 30% 1% 6 Search GAAS+MESFETS Search GAAS+MESFETS
7 BACKGATING EFFECT 1 50% 0% 2 Search BACKGATING+EFFECT Search BACKGATING+EFFECT
8 CHANNEL SUBSTRATE INTERFACE 1 100% 0% 2 Search CHANNEL+SUBSTRATE+INTERFACE Search CHANNEL+SUBSTRATE+INTERFACE
9 CHANNEL SUBSTRATE JUNCTION 1 100% 0% 2 Search CHANNEL+SUBSTRATE+JUNCTION Search CHANNEL+SUBSTRATE+JUNCTION
10 EXTRINSIC ILLUMINATION 1 100% 0% 2 Search EXTRINSIC+ILLUMINATION Search EXTRINSIC+ILLUMINATION

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 DLTS SPECTRA 21 71% 4% 17
2 SEMI INSULATING SUBSTRATE 17 79% 3% 11
3 TRANSCONDUCTANCE DISPERSION 6 58% 2% 7
4 RELAXATION SEMICONDUCTORS 5 43% 2% 9
5 MINORITY CARRIER INJECTION 4 39% 2% 9
6 POWER MESFETS 4 47% 2% 7
7 GATE LAG PHENOMENA 3 42% 1% 5
8 TURN ON CHARACTERISTICS 2 44% 1% 4
9 GATE LAG 2 40% 1% 4
10 OHMIC BEHAVIOR 2 43% 1% 3

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
Reliability of compound semiconductor devices for space applications 1999 4 7 29%
DEEP-LEVEL TRAPPING IN ION-IMPLANTED INP JFETS 1995 0 18 50%
MODELING GAAS/ALGAAS DEVICES - A CRITICAL-REVIEW 1985 0 16 19%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 FUNCT ELEMENTS CONTROL SYST 6 50% 1.9% 8
2 SEMICOND INTEGRATED CIRCUIT GRP 1 50% 0.5% 2
3 GRP MICROSISTEMAS MAT ELECT 1 21% 0.7% 3
4 PROD COMPLEX 1 50% 0.2% 1
5 RPC ELE ON TECHNOL 1 50% 0.2% 1
6 UNITA MODENA 1 13% 1.2% 5
7 UNITA BOLOGNA 0 14% 0.7% 3
8 BROADBAND DATA TRANSPORT 0 33% 0.2% 1
9 DIELECT GRP 0 33% 0.2% 1
10 MET SEMICONDUCTING MAT 0 33% 0.2% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000195070 LARGE SIGNAL MODEL//NONLINEAR MEASUREMENTS//MESFETS
2 0.0000182510 ULTRAHIGH FREQUENCY SEMICOND ELECT//INALAS INGAAS//HIGH ELECTRON MOBILITY TRANSISTORS
3 0.0000163453 4H SIC MESFET//MESFET//MESFETS
4 0.0000151908 ATSUGI ELECT COMMUN S FUNCT DEVICE DEV//INTEGRATED PROD BUSINESS UNIT//SINGLE VOLTAGE SUPPLY
5 0.0000117220 POST IMPLANTATION DEFECTS//MULTI INTERFACE SOLAR CELL//PLANAR NANOSTRUCTURE
6 0.0000103908 CURRENT DENSITY FILAMENT//HIGH FIELD DOMAIN//GUNN EFFECT
7 0.0000100539 HETEROJUNCTION PHOTOTRANSISTOR HPT//HETEROJUNCTION PHOTOTRANSISTOR//OPTICALLY CONTROLLED MESFET
8 0.0000097280 EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE
9 0.0000079381 PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES PCSSS//PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES//ULTRAFAST PHOTOELECT TECHNOL
10 0.0000075643 SCI PROD STATE ENTERPRISE//GRADED GAP ALXGA1 XAS STRUCTURES//GAAS RADIATION DETECTOR