Class information for:
Level 1: SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
19370 444 18.1 60%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SINGLE EVENT BURNOUT SEB Author keyword 72 100% 5% 23
2 SINGLE EVENT GATE RUPTURE SEGR Author keyword 56 100% 4% 19
3 RREACT GRP Address 33 77% 5% 23
4 SINGLE EVENT BURNOUT Author keyword 23 70% 4% 19
5 ION ELECTRON EMISSION MICROSCOPY Author keyword 19 80% 3% 12
6 SEGR Author keyword 15 68% 3% 13
7 FLOATING GATE MEMORIES Author keyword 9 67% 2% 8
8 SINGLE EVENT GATE RUPTURE Author keyword 7 56% 2% 9
9 ION PHOTON EMISSION MICROSCOPY Author keyword 6 80% 1% 4
10 FLOATING GATE FG MEMORIES Author keyword 6 100% 1% 4

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 SINGLE EVENT BURNOUT SEB 72 100% 5% 23 Search SINGLE+EVENT+BURNOUT+SEB Search SINGLE+EVENT+BURNOUT+SEB
2 SINGLE EVENT GATE RUPTURE SEGR 56 100% 4% 19 Search SINGLE+EVENT+GATE+RUPTURE+SEGR Search SINGLE+EVENT+GATE+RUPTURE+SEGR
3 SINGLE EVENT BURNOUT 23 70% 4% 19 Search SINGLE+EVENT+BURNOUT Search SINGLE+EVENT+BURNOUT
4 ION ELECTRON EMISSION MICROSCOPY 19 80% 3% 12 Search ION+ELECTRON+EMISSION+MICROSCOPY Search ION+ELECTRON+EMISSION+MICROSCOPY
5 SEGR 15 68% 3% 13 Search SEGR Search SEGR
6 FLOATING GATE MEMORIES 9 67% 2% 8 Search FLOATING+GATE+MEMORIES Search FLOATING+GATE+MEMORIES
7 SINGLE EVENT GATE RUPTURE 7 56% 2% 9 Search SINGLE+EVENT+GATE+RUPTURE Search SINGLE+EVENT+GATE+RUPTURE
8 ION PHOTON EMISSION MICROSCOPY 6 80% 1% 4 Search ION+PHOTON+EMISSION+MICROSCOPY Search ION+PHOTON+EMISSION+MICROSCOPY
9 FLOATING GATE FG MEMORIES 6 100% 1% 4 Search FLOATING+GATE+FG+MEMORIES Search FLOATING+GATE+FG+MEMORIES
10 RADIATION INDUCED LEAKAGE CURRENT 5 63% 1% 5 Search RADIATION+INDUCED+LEAKAGE+CURRENT Search RADIATION+INDUCED+LEAKAGE+CURRENT

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SEGR 32 78% 5% 21
2 SINGLE EVENT BURNOUT 27 66% 6% 25
3 EVENT GATE RUPTURE 20 62% 5% 21
4 THIN GATE OXIDES 13 35% 7% 31
5 INDUCED SOFT BREAKDOWN 11 78% 2% 7
6 INDUCED LEAKAGE CURRENT 9 18% 11% 48
7 VERTICAL POWER MOSFETS 9 64% 2% 9
8 BACKSIDE LASER 9 83% 1% 5
9 FLOATING GATE MEMORIES 9 83% 1% 5
10 SIRAD 9 83% 1% 5

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
Present and Future Non-Volatile Memories for Space 2010 41 98 44%
Soft errors in floating gate memory cells: A review 2015 0 13 85%
A review of ionizing radiation effects in floating gate memories 2004 19 46 30%
Production testing and quality assurance of CMS silicon microstrip tracker readout chips 2005 3 6 17%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 RREACT GRP 33 77% 5.2% 23
2 RD TECHNOL DEV 3 30% 2.0% 9
3 FTM ADV RD 2 44% 0.9% 4
4 STMICROELECT M6 2 67% 0.5% 2
5 RADIAT SOLID INTERACT PROC 1111 1 40% 0.5% 2
6 DEV TECHNOL DEV 1 50% 0.2% 1
7 DIPARTIMENTO INFN INFORMAZ 1 50% 0.2% 1
8 ELECT MAT ENGN ELECT 1 50% 0.2% 1
9 IES UMR CNRS 5214 UM2 1 50% 0.2% 1
10 STI IEL E 1 50% 0.2% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000233971 OXIDE TRAPPED CHARGE//ELDRS//TOTAL IONIZING DOSE
2 0.0000187183 SINGLE EVENT UPSET SEU//SINGLE EVENT UPSET//SINGLE EVENT TRANSIENT
3 0.0000122208 RADIATION INDUCED CHARGES//AF IOFFE PTI//RETAINED POLARIZATION
4 0.0000121180 STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD
5 0.0000101563 RADFET//IMPLANTABLE DOSIMETER//DEVICE PHYS MICROELECT
6 0.0000083129 SONOS//CHARGE TRAPPING LAYER//FLASH MEMORY
7 0.0000058864 GAS FILLED SURGE ARRESTERS//BREAKDOWN TIME DELAY//AFTERGLOW PERIOD
8 0.0000047563 INSULATED GATE BIPOLAR TRANSISTOR IGBT//LATERAL INSULATED GATE BIPOLAR TRANSISTOR LIGBT//INSULATED GATE BIPOLAR TRANSISTORS IGBTS
9 0.0000045500 MULTIPROCESSOR COMPUTER ARCHITECTURES//SLEEPING BAG//UPWINDING SCHEME
10 0.0000045429 SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE BV//LDMOS