Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
18952 | 462 | 13.4 | 36% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
2713 | 2787 | HIGH CURRENT ELECT//LINEAR TRANSFORMER DRIVER//GAS SWITCH |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | REVERSELY SWITCHED DYNISTOR RSD | Author keyword | 17 | 100% | 2% | 8 |
2 | POWER SEMICONDUCTOR DIODE SWITCHES | Author keyword | 6 | 80% | 1% | 4 |
3 | POWER SEMICOND DEVICES | Address | 6 | 100% | 1% | 4 |
4 | CHAIR ELECT DR | Address | 3 | 100% | 1% | 3 |
5 | ION SOURCE CONVERTER | Author keyword | 3 | 100% | 1% | 3 |
6 | SEMICONDUCTOR OPENING SWITCH SOS | Author keyword | 3 | 60% | 1% | 3 |
7 | CHAIR ELECT DRIVES | Address | 2 | 67% | 0% | 2 |
8 | DELAYED BREAKDOWN DIODE | Author keyword | 2 | 67% | 0% | 2 |
9 | DRIFT STEP RECOVERY DIODE DSRD | Author keyword | 2 | 67% | 0% | 2 |
10 | PICOSECOND SWITCH | Author keyword | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ELECTRON HOLE SCATTERING | 14 | 64% | 3% | 14 |
2 | NEGATIVE ABSOLUTE MOBILITY | 11 | 65% | 2% | 11 |
3 | 4H SIC THYRISTORS | 11 | 78% | 2% | 7 |
4 | CRITICAL CHARGE DENSITY | 6 | 100% | 1% | 4 |
5 | SUPERHIGH CURRENT DENSITIES | 6 | 100% | 1% | 4 |
6 | TURNED ON STATE | 4 | 75% | 1% | 3 |
7 | OPENING SWITCHES | 3 | 35% | 2% | 8 |
8 | 4H SIC DIODES | 3 | 57% | 1% | 4 |
9 | SIC SURFACE | 2 | 67% | 0% | 2 |
10 | SIC DIODES | 2 | 43% | 1% | 3 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Nanosecond semiconductor diodes for pulsed power switching | 2005 | 19 | 13 | 100% |
Power bipolar devices based on silicon carbide | 2005 | 23 | 40 | 78% |
Switching possibilities of reverse switched-on dynistors and principles of RSD circuitry (review) | 2002 | 17 | 8 | 100% |
High-power nanosecond pulse generators based on semiconductor opening switches (review) | 1999 | 62 | 8 | 63% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | POWER SEMICOND DEVICES | 6 | 100% | 0.9% | 4 |
2 | CHAIR ELECT DR | 3 | 100% | 0.6% | 3 |
3 | CHAIR ELECT DRIVES | 2 | 67% | 0.4% | 2 |
4 | PHYS TECH HIGH | 1 | 100% | 0.4% | 2 |
5 | STATE INTENSE PULSED RADIAT FIELD SIMULAT | 1 | 100% | 0.4% | 2 |
6 | ARLSEDE | 1 | 50% | 0.2% | 1 |
7 | EERE | 1 | 50% | 0.2% | 1 |
8 | TECHNOL ELE SCANNER | 1 | 50% | 0.2% | 1 |
9 | MOLNIYA ENGN | 0 | 20% | 0.2% | 1 |
10 | STATE ENTERPRISE | 0 | 17% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000161796 | LASER RANGEFINDING//TIMING DISCRIMINATION//BIPOLAR TRANSISTOR SWITCHES |
2 | 0.0000145633 | PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES PCSSS//PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES//ULTRAFAST PHOTOELECT TECHNOL |
3 | 0.0000130086 | HIGH CURRENT ELECT//GAS DIODE//RUNAWAY ELECTRONS |
4 | 0.0000122565 | LINEAR TRANSFORMER DRIVER//GAS SWITCH//SPARK GAP SWITCH |
5 | 0.0000118753 | OPTOELECTRONIC INTEGRATED DEVICE//OPTICAL FUNCTIONAL DEVICE//LIGHT EMITTING THYRISTOR |
6 | 0.0000095703 | 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS |
7 | 0.0000084039 | INSULATED GATE BIPOLAR TRANSISTOR IGBT//LATERAL INSULATED GATE BIPOLAR TRANSISTOR LIGBT//INSULATED GATE BIPOLAR TRANSISTORS IGBTS |
8 | 0.0000083543 | MULTIPLE TRAPPING IN LOCALIZED STATES//// |
9 | 0.0000077047 | OPEN CIRCUIT VOLTAGE DECAY OCVD//APPARENT BAND GAP NARROWING//EQUIVALENT DIAGRAM |
10 | 0.0000050097 | IN FRANTZEVICH PROBLEMS MAT SCI//GROWTH TECHNIQUES//SEMICOND HETEROSTRUCT |