Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
18867 | 466 | 16.7 | 52% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | LASER MOL BEAM EPITAXY | Address | 15 | 88% | 2% | 7 |
2 | PTSI | Author keyword | 4 | 24% | 3% | 16 |
3 | IRIDIUM SILICIDES | Author keyword | 4 | 75% | 1% | 3 |
4 | SINGLE ELECTRON EFFECT | Author keyword | 2 | 44% | 1% | 4 |
5 | MOLECULAR BEAM EPITAXY SYSTEM | Author keyword | 2 | 67% | 0% | 2 |
6 | SCHOTTKY BARRIER DETECTOR SBD | Author keyword | 2 | 67% | 0% | 2 |
7 | MICROELECT DEVICES | Address | 2 | 43% | 1% | 3 |
8 | IR SEGREGATION | Author keyword | 1 | 100% | 0% | 2 |
9 | PTSI SCHOTTKY BARRIER DETECTOR SBD | Author keyword | 1 | 100% | 0% | 2 |
10 | PLATINUM SILICIDE | Author keyword | 1 | 16% | 1% | 6 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | IRIDIUM SILICIDES | 23 | 86% | 3% | 12 |
2 | BARRIER INFRARED DETECTORS | 11 | 69% | 2% | 9 |
3 | PLATINUM SILICIDE FORMATION | 6 | 58% | 2% | 7 |
4 | PTSI | 5 | 43% | 2% | 9 |
5 | ENHANCED QUANTUM EFFICIENCY | 4 | 75% | 1% | 3 |
6 | PTSI FORMATION | 3 | 50% | 1% | 4 |
7 | PT2SI | 3 | 60% | 1% | 3 |
8 | INTERNAL PHOTOEMISSION | 3 | 14% | 4% | 17 |
9 | DEEP SUBMICRON LINES | 2 | 67% | 0% | 2 |
10 | PTSI CONTACT METALLURGY | 2 | 67% | 0% | 2 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Surface plasmon photodetectors and their applications | 2014 | 20 | 162 | 22% |
A SHORT-WAVELENGTH INFRARED CCD DETECTOR OF THE OPTICAL SENSOR INSTALLED IN THE JERS-1 SATELLITE | 1993 | 0 | 1 | 100% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | LASER MOL BEAM EPITAXY | 15 | 88% | 1.5% | 7 |
2 | MICROELECT DEVICES | 2 | 43% | 0.6% | 3 |
3 | CENT SCI 4 | 1 | 50% | 0.2% | 1 |
4 | FMRI MARSEILLE | 1 | 50% | 0.2% | 1 |
5 | ISEN UMR CNRS 8520 | 1 | 50% | 0.2% | 1 |
6 | TECH DEV MEGURO KU | 1 | 50% | 0.2% | 1 |
7 | AF JOFFE PHYSICOTECH | 0 | 33% | 0.2% | 1 |
8 | DAVID SARNOFF | 0 | 25% | 0.2% | 1 |
9 | KANATA N RPO | 0 | 17% | 0.2% | 1 |
10 | UMRS 8520 | 0 | 17% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000155911 | NANOMAT CHARACTERIZAT SCI PROC TECHNOL//AG CUINSE2//C T NANOMAT CHARACTERIZAT SCI PROC TECHNO |
2 | 0.0000134393 | GERMANIUM DOPED WITH GALLIUM//ISO SPACECRAFT//EXTRINSIC SEMICONDUCTOR |
3 | 0.0000128568 | VALENCE BAND DENSITY OF STATES//SURFACE MAGNETO OPTIC KERR EFFECT//METAL SEMICONDUCTOR THIN FILM |
4 | 0.0000113274 | TISI2//SALICIDE//NICKEL SILICIDE |
5 | 0.0000113051 | RU2SI3//OSSI2//CHROMIUM DISILICIDE |
6 | 0.0000087684 | INFNSEZ LECCE//FAST SIGNALS//FOCUSED ION BEAM IMAGING |
7 | 0.0000086649 | GAAS IMAGE SENSOR//DUAL GATE MOSFET//2 D ELECTRON GAS CHARGE COUPLED DEVICES 2DEG CCDS |
8 | 0.0000083280 | SCHOTTKY BARRIER SB//DOPANT SEGREGATION DS//SCHOTTKY BARRIER SB MOSFET |
9 | 0.0000072591 | BALLISTIC ELECTRON EMISSION MICROSCOPY//BALLISTIC ELECTRON EMISSION MICROSCOPY BEEM//BEEM |
10 | 0.0000070439 | NONUNIFORMITY CORRECTION//SCENE BASED NONUNIFORMITY CORRECTION//INFRARED FOCAL PLANE ARRAYS |