Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
18738 | 472 | 19.5 | 75% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | LIGAO2 | Author keyword | 9 | 55% | 3% | 12 |
2 | AMORPHOUS GAN | Author keyword | 6 | 58% | 1% | 7 |
3 | NON POLAR NITRIDES | Author keyword | 4 | 75% | 1% | 3 |
4 | LASER INDUCED MOLECULAR BEAM EPITAXY | Author keyword | 3 | 60% | 1% | 3 |
5 | OPT SYST BUSINESS DEV | Address | 3 | 60% | 1% | 3 |
6 | ADV TECHNOL S FUTTSU | Address | 2 | 67% | 0% | 2 |
7 | ZNO SUBSTRATE | Author keyword | 2 | 67% | 0% | 2 |
8 | POLYCRYSTALLINE GAN | Author keyword | 1 | 38% | 1% | 3 |
9 | RF PLASMA NITROGEN SOURCE | Author keyword | 1 | 100% | 0% | 2 |
10 | MIDDLE FREQUENCY | Author keyword | 1 | 33% | 1% | 3 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | LIGAO2 | 9 | 55% | 3% | 12 | Search LIGAO2 | Search LIGAO2 |
2 | AMORPHOUS GAN | 6 | 58% | 1% | 7 | Search AMORPHOUS+GAN | Search AMORPHOUS+GAN |
3 | NON POLAR NITRIDES | 4 | 75% | 1% | 3 | Search NON+POLAR+NITRIDES | Search NON+POLAR+NITRIDES |
4 | LASER INDUCED MOLECULAR BEAM EPITAXY | 3 | 60% | 1% | 3 | Search LASER+INDUCED+MOLECULAR+BEAM+EPITAXY | Search LASER+INDUCED+MOLECULAR+BEAM+EPITAXY |
5 | ZNO SUBSTRATE | 2 | 67% | 0% | 2 | Search ZNO+SUBSTRATE | Search ZNO+SUBSTRATE |
6 | POLYCRYSTALLINE GAN | 1 | 38% | 1% | 3 | Search POLYCRYSTALLINE+GAN | Search POLYCRYSTALLINE+GAN |
7 | RF PLASMA NITROGEN SOURCE | 1 | 100% | 0% | 2 | Search RF+PLASMA+NITROGEN+SOURCE | Search RF+PLASMA+NITROGEN+SOURCE |
8 | MIDDLE FREQUENCY | 1 | 33% | 1% | 3 | Search MIDDLE+FREQUENCY | Search MIDDLE+FREQUENCY |
9 | GAN THIN FILMS | 1 | 25% | 1% | 4 | Search GAN+THIN+FILMS | Search GAN+THIN+FILMS |
10 | ECR PEMOCVD | 1 | 23% | 1% | 3 | Search ECR+PEMOCVD | Search ECR+PEMOCVD |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | STRONG PHOTOLUMINESCENCE EMISSION | 15 | 82% | 2% | 9 |
2 | POLYCRYSTALLINE GAN | 7 | 53% | 2% | 9 |
3 | NANO CRYSTALLINE GAN | 6 | 80% | 1% | 4 |
4 | ALN FILMS | 4 | 16% | 5% | 25 |
5 | MGAL2O4 SUBSTRATE | 4 | 75% | 1% | 3 |
6 | AMORPHOUS GAN | 4 | 38% | 2% | 8 |
7 | LARGE AREA PLD | 2 | 67% | 0% | 2 |
8 | LIGAO2 | 2 | 21% | 2% | 8 |
9 | BEAM LINE BL 3A | 2 | 36% | 1% | 4 |
10 | LA SRAL TAO 3 SINGLE CRYSTALS | 2 | 43% | 1% | 3 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices | 2015 | 0 | 167 | 38% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | OPT SYST BUSINESS DEV | 3 | 60% | 0.6% | 3 |
2 | ADV TECHNOL S FUTTSU | 2 | 67% | 0.4% | 2 |
3 | EDWARD ACCELERATOR | 1 | 50% | 0.2% | 1 |
4 | ELECT ENGN IT MATHS | 1 | 50% | 0.2% | 1 |
5 | PL PHYS DFG | 1 | 50% | 0.2% | 1 |
6 | ELECT ENGN IT MATH | 0 | 20% | 0.4% | 2 |
7 | ESTD ELECT MAT BRANCH | 0 | 33% | 0.2% | 1 |
8 | NANO FABRICAT GRP | 0 | 18% | 0.4% | 2 |
9 | GRP FIS FLUIDOS COMPLEJOS | 0 | 13% | 0.4% | 2 |
10 | FILMES SEMICOND | 0 | 20% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000204622 | GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH |
2 | 0.0000156167 | SI111 SUBSTRATES//SI111 SUBSTRATE//ALN BUFFER |
3 | 0.0000147673 | CUBIC GAN//FB PHYS 6//HEXAGONAL GAN |
4 | 0.0000130506 | GAN NANOWIRES//AMMONIATING//GAN NANORODS |
5 | 0.0000124654 | A PLANE GAN//LED TECHNOL//NONPOLAR |
6 | 0.0000105394 | EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS |
7 | 0.0000105025 | GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING |
8 | 0.0000094204 | OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//YELLOW LUMINESCENCE//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH |
9 | 0.0000093443 | ALUMINUM NITRIDE//FILM BULK ACOUSTIC RESONATOR//ALUMINIUM NITRIDE |
10 | 0.0000093234 | INN//INDIUM NITRIDE//INN PROJECT |