Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
18470 | 485 | 18.6 | 75% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | GAASSB | Author keyword | 7 | 24% | 5% | 26 |
2 | PHOTON INFORMAT ENGN | Address | 6 | 48% | 2% | 10 |
3 | NON MARKOVIAN GAIN MODEL | Author keyword | 6 | 100% | 1% | 4 |
4 | PHYS SEMICOND SCI | Address | 5 | 21% | 4% | 20 |
5 | INGAAS GAASSB | Author keyword | 4 | 50% | 1% | 6 |
6 | MBE GRP | Address | 4 | 75% | 1% | 3 |
7 | OPT INTERCONNECT NEC | Address | 4 | 75% | 1% | 3 |
8 | ZNO MGZNO | Author keyword | 3 | 57% | 1% | 4 |
9 | BILAYER QUANTUM WELL | Author keyword | 3 | 100% | 1% | 3 |
10 | GAASSB GAAS | Author keyword | 3 | 60% | 1% | 3 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAASSB | 7 | 24% | 5% | 26 | Search GAASSB | Search GAASSB |
2 | NON MARKOVIAN GAIN MODEL | 6 | 100% | 1% | 4 | Search NON+MARKOVIAN+GAIN+MODEL | Search NON+MARKOVIAN+GAIN+MODEL |
3 | INGAAS GAASSB | 4 | 50% | 1% | 6 | Search INGAAS+GAASSB | Search INGAAS+GAASSB |
4 | ZNO MGZNO | 3 | 57% | 1% | 4 | Search ZNO+MGZNO | Search ZNO+MGZNO |
5 | BILAYER QUANTUM WELL | 3 | 100% | 1% | 3 | Search BILAYER+QUANTUM+WELL | Search BILAYER+QUANTUM+WELL |
6 | GAASSB GAAS | 3 | 60% | 1% | 3 | Search GAASSB+GAAS | Search GAASSB+GAAS |
7 | INTRABAND RELAXATION TIME | 2 | 67% | 0% | 2 | Search INTRABAND+RELAXATION+TIME | Search INTRABAND+RELAXATION+TIME |
8 | PIEZOELECTRIC SEMICONDUCTOR MATERIALS DEVICES | 2 | 67% | 0% | 2 | Search PIEZOELECTRIC+SEMICONDUCTOR+MATERIALS+DEVICES | Search PIEZOELECTRIC+SEMICONDUCTOR+MATERIALS+DEVICES |
9 | GAASSB GAAS LASER | 1 | 100% | 0% | 2 | Search GAASSB+GAAS+LASER | Search GAASSB+GAAS+LASER |
10 | K P THEORY | 1 | 50% | 0% | 2 | Search K+P+THEORY | Search K+P+THEORY |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | DENSITY OPERATOR THEORY | 13 | 69% | 2% | 11 |
2 | GAAS05SB05 | 13 | 62% | 3% | 13 |
3 | NON MARKOVIAN GAIN | 13 | 71% | 2% | 10 |
4 | STOCHASTIC RESERVOIR | 10 | 58% | 2% | 11 |
5 | GAASSB INGAAS | 7 | 53% | 2% | 10 |
6 | GAASSB | 4 | 28% | 3% | 13 |
7 | INTRABAND RELAXATION TIME | 2 | 44% | 1% | 4 |
8 | BLUE LASER DIODE | 2 | 50% | 1% | 3 |
9 | GAAS1 XSBX | 2 | 29% | 1% | 6 |
10 | II SUPERLATTICE | 1 | 50% | 0% | 2 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Theory of non-Markovian optical gain in quantum-well lasers | 1997 | 123 | 57 | 11% |
Hole scattering and optical transitions in wide-band-gap nitrides: Wurtzite and zinc-blende structures | 1997 | 29 | 68 | 13% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | PHOTON INFORMAT ENGN | 6 | 48% | 2.1% | 10 |
2 | PHYS SEMICOND SCI | 5 | 21% | 4.1% | 20 |
3 | MBE GRP | 4 | 75% | 0.6% | 3 |
4 | OPT INTERCONNECT NEC | 4 | 75% | 0.6% | 3 |
5 | NAT WISSEN AFTL FAK PHYS 2 | 1 | 100% | 0.4% | 2 |
6 | TONGDAIMOON KU | 1 | 40% | 0.4% | 2 |
7 | CSSER | 1 | 50% | 0.2% | 1 |
8 | ELECT MAT PROCESSING | 1 | 50% | 0.2% | 1 |
9 | MAT SCI ENGN CHIKUSA KU | 1 | 50% | 0.2% | 1 |
10 | NANOSIMULAT | 1 | 50% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000179173 | A PLANE GAN//LED TECHNOL//NONPOLAR |
2 | 0.0000164123 | INGAN//EFFICIENCY DROOP//ELECTRON BLOCKING LAYER EBL |
3 | 0.0000126648 | EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS |
4 | 0.0000109952 | GAINNAS//DILUTE NITRIDES//GANAS |
5 | 0.0000096596 | QUANTUM WELL LASERS//ANTI GUIDING FACTOR//MULTIQUANTUM WELL LASERS |
6 | 0.0000090125 | CUBIC GAN//FB PHYS 6//HEXAGONAL GAN |
7 | 0.0000082089 | GASB//GALLIUM ANTIMONIDE//GAINASSB |
8 | 0.0000077572 | NEGATIVE EFFECTIVE MASS//GAASP QUANTUM WELLS//III V SEMICONDUCTOR HETEROJUNCTIONS |
9 | 0.0000074174 | ACT OPTOGAN//INGAAS ALASSB//FESTA S |
10 | 0.0000068972 | AL1 XINXN//ALINN//RESONANT CAVITY LIGHT EMITTING DIODE RCLED |