Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 18368 | 490 | 21.1 | 46% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 372 | 16511 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | CLUSTER OF DEFECTS | Author keyword | 1 | 50% | 0% | 1 |
| 2 | GROUP II ELEMENTS | Author keyword | 1 | 50% | 0% | 1 |
| 3 | SI CD | Author keyword | 1 | 50% | 0% | 1 |
| 4 | UNIAXIAL STRESS SPECTROSCOPY | Author keyword | 1 | 50% | 0% | 1 |
| 5 | W CENTER | Author keyword | 1 | 50% | 0% | 1 |
| 6 | WIRELESS COMM S | Address | 1 | 50% | 0% | 1 |
| 7 | ANNEALING PROCEDURES | Author keyword | 0 | 33% | 0% | 1 |
| 8 | CARBON COMPLEXES | Author keyword | 0 | 33% | 0% | 1 |
| 9 | EFG SILICON | Author keyword | 0 | 33% | 0% | 1 |
| 10 | LOFFE PHYSICOTECH | Address | 0 | 33% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | CLUSTER OF DEFECTS | 1 | 50% | 0% | 1 | Search CLUSTER+OF+DEFECTS | Search CLUSTER+OF+DEFECTS |
| 2 | GROUP II ELEMENTS | 1 | 50% | 0% | 1 | Search GROUP+II+ELEMENTS | Search GROUP+II+ELEMENTS |
| 3 | SI CD | 1 | 50% | 0% | 1 | Search SI++CD | Search SI++CD |
| 4 | UNIAXIAL STRESS SPECTROSCOPY | 1 | 50% | 0% | 1 | Search UNIAXIAL+STRESS+SPECTROSCOPY | Search UNIAXIAL+STRESS+SPECTROSCOPY |
| 5 | W CENTER | 1 | 50% | 0% | 1 | Search W+CENTER | Search W+CENTER |
| 6 | ANNEALING PROCEDURES | 0 | 33% | 0% | 1 | Search ANNEALING+PROCEDURES | Search ANNEALING+PROCEDURES |
| 7 | CARBON COMPLEXES | 0 | 33% | 0% | 1 | Search CARBON+COMPLEXES | Search CARBON+COMPLEXES |
| 8 | EFG SILICON | 0 | 33% | 0% | 1 | Search EFG+SILICON | Search EFG+SILICON |
| 9 | SILICON NANOTIPS | 0 | 33% | 0% | 1 | Search SILICON+NANOTIPS | Search SILICON+NANOTIPS |
| 10 | SPECTROSCOPIC DATA ANALYSIS | 0 | 33% | 0% | 1 | Search SPECTROSCOPIC+DATA+ANALYSIS | Search SPECTROSCOPIC+DATA+ANALYSIS |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | DOPED CRYSTALLINE SILICON | 7 | 53% | 2% | 9 |
| 2 | C LINE DEFECT | 6 | 100% | 1% | 4 |
| 3 | INTERSTITIAL CARBON | 4 | 24% | 3% | 15 |
| 4 | ISOELECTRONIC BOUND EXCITONS | 4 | 56% | 1% | 5 |
| 5 | OXYGEN RICH SILICON | 3 | 57% | 1% | 4 |
| 6 | LUMINESCENCE DECAY TIME | 3 | 50% | 1% | 4 |
| 7 | BERYLLIUM DOPED SILICON | 2 | 67% | 0% | 2 |
| 8 | RADIATION DAMAGE CENTERS | 2 | 50% | 1% | 3 |
| 9 | COMPLEX DEFECTS | 1 | 31% | 1% | 4 |
| 10 | BUILDUP KINETICS | 1 | 100% | 0% | 2 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| THE OPTICAL-PROPERTIES OF LUMINESCENCE-CENTERS IN SILICON | 1989 | 328 | 96 | 55% |
| Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched Si-28 | 2011 | 11 | 116 | 41% |
| Exciton Spectroscopy of Group(III) and Group(V) impurities, of hydrogen-containing defects, and of V-6 vacancy clusters in silicon | 2005 | 1 | 12 | 92% |
| Silicon as an emissive optical medium | 2007 | 23 | 69 | 22% |
| ELECTRONIC-STRUCTURE AND BOUND EXCITONS FOR DEFECTS IN SEMICONDUCTORS FROM OPTICAL SPECTROSCOPY | 1988 | 15 | 44 | 52% |
| Light emission from silicon | 1997 | 36 | 91 | 21% |
| Optical measurements of point defects | 1999 | 3 | 51 | 43% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | WIRELESS COMM S | 1 | 50% | 0.2% | 1 |
| 2 | LOFFE PHYSICOTECH | 0 | 33% | 0.2% | 1 |
| 3 | TECHNOL DEV OFF | 0 | 18% | 0.4% | 2 |
| 4 | ICHHPS | 0 | 17% | 0.4% | 2 |
| 5 | SCI JEROME | 0 | 17% | 0.2% | 1 |
| 6 | POWER DEVICE | 0 | 14% | 0.2% | 1 |
| 7 | HIGH VOLTAGE EQUIPMENT | 0 | 13% | 0.2% | 1 |
| 8 | ULSI DEV DEV S | 0 | 100% | 0.2% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000218208 | LIFETIME CONTROL//SEMI INSULATING MATERIALS//POWER DIODES |
| 2 | 0.0000162449 | GETTERING//GETTERING EFFICIENCY//SI AU |
| 3 | 0.0000146617 | BANDLIKE STATES//DISLOCATION ENGINEERED//RECOMBINATION STRENGTH |
| 4 | 0.0000114413 | ODCR//OPTICALLY DETECTED CYCLOTRON RESONANCE ODCR//CNRS PHYS SOLIDES 154 |
| 5 | 0.0000107301 | HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN IN SI |
| 6 | 0.0000106305 | OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON |
| 7 | 0.0000099912 | GAP N//PICOSECOND TIMING RESOLUTION//SI H BOND DISSOCIATION |
| 8 | 0.0000089178 | OPTIMIZATION OF ANNEALING//ERBIUM RELATED CENTRES//SELF ASSEMBLED SILICON QUANTUM WELLS |
| 9 | 0.0000088111 | ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS |
| 10 | 0.0000086114 | STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI |