Class information for:
Level 1: 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
1832 2395 17.9 66%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1001 9900 SILICON CARBIDE//4H SIC//SIC

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 4H SIC Author keyword 45 21% 8% 191
2 SILICON CARBIDE SIC Author keyword 43 29% 5% 123
3 BIPOLAR JUNCTION TRANSISTORS BJTS Author keyword 27 74% 1% 20
4 SIO2 SIC INTERFACE Author keyword 27 66% 1% 25
5 EDGE TERMINATION Author keyword 24 45% 2% 40
6 NEW BRUNSWICK TECHNOL Address 21 85% 0% 11
7 CHANNEL MOBILITY Author keyword 18 33% 2% 44
8 ULTRA LOW LOSS POWER DEVICE TECHNOL BODY Address 14 65% 1% 13
9 JUNCTION TERMINATION EXTENSION JTE Author keyword 13 67% 1% 12
10 JUNCTION BARRIER SCHOTTKY JBS Author keyword 13 69% 0% 11

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 4H SIC 45 21% 8% 191 Search 4H+SIC Search 4H+SIC
2 SILICON CARBIDE SIC 43 29% 5% 123 Search SILICON+CARBIDE+SIC Search SILICON+CARBIDE+SIC
3 BIPOLAR JUNCTION TRANSISTORS BJTS 27 74% 1% 20 Search BIPOLAR+JUNCTION+TRANSISTORS+BJTS Search BIPOLAR+JUNCTION+TRANSISTORS+BJTS
4 SIO2 SIC INTERFACE 27 66% 1% 25 Search SIO2+SIC+INTERFACE Search SIO2+SIC+INTERFACE
5 EDGE TERMINATION 24 45% 2% 40 Search EDGE+TERMINATION Search EDGE+TERMINATION
6 CHANNEL MOBILITY 18 33% 2% 44 Search CHANNEL+MOBILITY Search CHANNEL+MOBILITY
7 JUNCTION TERMINATION EXTENSION JTE 13 67% 1% 12 Search JUNCTION+TERMINATION+EXTENSION+JTE Search JUNCTION+TERMINATION+EXTENSION+JTE
8 JUNCTION BARRIER SCHOTTKY JBS 13 69% 0% 11 Search JUNCTION+BARRIER+SCHOTTKY+JBS Search JUNCTION+BARRIER+SCHOTTKY+JBS
9 JUNCTION BARRIER SCHOTTKY 12 86% 0% 6 Search JUNCTION+BARRIER+SCHOTTKY Search JUNCTION+BARRIER+SCHOTTKY
10 4H SILICON CARBIDE SIC 9 83% 0% 5 Search 4H+SILICON+CARBIDE+SIC Search 4H+SILICON+CARBIDE+SIC

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SIC SIO2 INTERFACE 52 72% 2% 41
2 CHANNEL MOBILITY 43 50% 3% 63
3 BAND EDGES 42 74% 1% 31
4 4H SIC SIO2 INTERFACE 41 81% 1% 25
5 INVERSION CHANNEL MOBILITY 33 77% 1% 23
6 4H SIC MOSFETS 23 53% 1% 31
7 4 H 20 19% 4% 95
8 SIC SIO2 18 61% 1% 19
9 6H SILICON CARBIDE 16 35% 2% 38
10 EDGE TERMINATION 13 47% 1% 20

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Band alignment and defect states at SiC/oxide interfaces 2004 54 72 76%
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review 1996 525 143 33%
Prospects for SiC electronics and sensors 2008 68 53 53%
The mechanism of defect creation and passivation at the SiC/SiO2 interface 2007 56 77 64%
4H-SiC oxynitridation for generation of insulating layers 2004 20 30 97%
Growth of SiO2 on SiC by dry thermal oxidation: mechanisms 2007 30 45 47%
Silicon carbide and diamond for high temperature device applications 2006 87 138 18%
Nanoscale transport properties at silicon carbide interfaces 2010 12 122 43%
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC 2011 4 14 64%
Recent trends in silicon carbide device research 2008 3 35 91%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 NEW BRUNSWICK TECHNOL 21 85% 0.5% 11
2 ULTRA LOW LOSS POWER DEVICE TECHNOL BODY 14 65% 0.5% 13
3 NEW MAT DEVICES RD 12 86% 0.3% 6
4 SIC 11 19% 2.2% 52
5 POWER SEMICOND 10 41% 0.8% 19
6 NEW BRUNSWICK TECH 8 100% 0.2% 5
7 POWER SEMICOND GRP 7 48% 0.5% 11
8 ENERGY EFFICIENT SEMICOND 7 67% 0.3% 6
9 RD ASSOC FED 6 80% 0.2% 4
10 SIEMENS CO 6 80% 0.2% 4

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000212432 OHMIC CONTACT//OHMIC CONTACTS//P TYPE SIC
2 0.0000174859 LEHRSTUHL THEOR FESTKORPERPHYS//SEMI INSULATING SIC//TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION
3 0.0000145880 4H SIC MESFET//MESFET//MESFETS
4 0.0000141209 MICROPIPE//SUBLIMATION GROWTH//MICROPIPES
5 0.0000124547 SIMA//HEXAGONAL SURFACES//DSMDRECAMSPCSI
6 0.0000095703 REVERSELY SWITCHED DYNISTOR RSD//POWER SEMICONDUCTOR DIODE SWITCHES//POWER SEMICOND DEVICES
7 0.0000076343 3C SIC//FG NANOTECHNOL//HOLLOW VOID
8 0.0000069980 BEAM CHANNEL TRANSISTOR//IMPURITY ENHANCED OXIDATION//BIPOLAR MODE FIELD EFFECT TRANSISTORS BMFETS
9 0.0000069404 IN FRANTZEVICH PROBLEMS MAT SCI//GROWTH TECHNIQUES//SEMICOND HETEROSTRUCT
10 0.0000067779 P INGAN//GAN SIC HETEROJUNCTION//COMMON EMITTER