Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
18301 | 493 | 15.0 | 55% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | CD4GESE6 | Author keyword | 1 | 100% | 0% | 2 |
2 | ELECTRICITY PROPERTIES | Author keyword | 1 | 100% | 0% | 2 |
3 | ELECTROCHEMICAL C V PROFILING | Author keyword | 1 | 100% | 0% | 2 |
4 | HOT WALL CHEMICAL VAPOR DEPOSITION | Author keyword | 1 | 50% | 0% | 2 |
5 | MEMORY CAPACITOR | Author keyword | 1 | 50% | 0% | 1 |
6 | MOLECULAR AND ATOM BEAM EPITAXY | Author keyword | 1 | 50% | 0% | 1 |
7 | PHYS NOWON KU | Address | 1 | 50% | 0% | 1 |
8 | THREADING DEFECTS | Author keyword | 1 | 50% | 0% | 1 |
9 | ZN PHTALOCYANINE | Author keyword | 1 | 50% | 0% | 1 |
10 | C V PROFILING | Author keyword | 0 | 20% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | PROFILING TECHNIQUE | 5 | 60% | 1% | 6 |
2 | CONDUCTION BAND DISCONTINUITIES | 4 | 67% | 1% | 4 |
3 | ISOTYPE HETEROJUNCTION | 4 | 67% | 1% | 4 |
4 | ISOTYPE HETEROJUNCTIONS | 4 | 67% | 1% | 4 |
5 | CARRIER PROFILE | 4 | 75% | 1% | 3 |
6 | BAND DISCONTINUITY | 2 | 33% | 1% | 6 |
7 | ADMITTANCE SPECTROSCOPY MEASUREMENT | 1 | 50% | 0% | 2 |
8 | C V MEASUREMENTS | 1 | 50% | 0% | 2 |
9 | CONDUCTION BAND DISCONTINUITY | 1 | 30% | 1% | 3 |
10 | CARRIER DISTRIBUTIONS | 1 | 40% | 0% | 2 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers | 1986 | 141 | 12 | 58% |
STUDY OF SEMICONDUCTORS USING ELECTROCHEMICAL TECHNIQUES - FREE CARRIER CONCENTRATION PROFILING | 1992 | 0 | 6 | 100% |
RECENT ADVANCES IN GAAS DYNAMIC MEMORIES | 1993 | 0 | 27 | 48% |
Modeling interplay between regional net ecosystem carbon balance and soil erosion for a crop-pasture region | 2007 | 1 | 77 | 1% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | PHYS NOWON KU | 1 | 50% | 0.2% | 1 |
2 | PHYS SPECT | 0 | 33% | 0.2% | 1 |
3 | GEOWISSEN KRISTALLOG | 0 | 15% | 0.4% | 2 |
4 | PROF DR ADNAN TEKIN HIGH TECHNOL CERAM COMPOSIT | 0 | 25% | 0.2% | 1 |
5 | WUHAN POSTS TELECOMMUN | 0 | 20% | 0.2% | 1 |
6 | PESQUISA DISPOSITIVOS | 0 | 17% | 0.2% | 1 |
7 | TECHNOL FOTON | 0 | 17% | 0.2% | 1 |
8 | NUCL INVEST | 0 | 14% | 0.2% | 1 |
9 | ELE ELE OOPT MAT | 0 | 13% | 0.2% | 1 |
10 | MEMORY DEVICE | 0 | 11% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000160122 | AVERAGE BOND ENERGY THEORY//PHYS IND PHYS//PH ECUBLENS PHYS PL |
2 | 0.0000158221 | POST IMPLANTATION DEFECTS//MULTI INTERFACE SOLAR CELL//PLANAR NANOSTRUCTURE |
3 | 0.0000146663 | INALAS INP//INALAS ALLOYS//INALAS ALASSB |
4 | 0.0000098807 | DX CENTERS//DX CENTER//DX CENTRE |
5 | 0.0000085547 | DELTA DOPING//SELF CONSISTENTLY//DELTA DOPED QUANTUM WELLS |
6 | 0.0000083091 | PSEUDOMORPHIC MODFET//DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTOR DG HEMT//AC MOBILITY |
7 | 0.0000077525 | INASP INP//INASP//QUANTUM PHOTOVOLTA GRP |
8 | 0.0000060242 | ANAL SEMICOND NANOSTRUCT//QUANTUM DOT INFRARED PHOTODETECTOR QDIP//QUANTUM DOT INFRARED PHOTODETECTOR |
9 | 0.0000056563 | FAK PHYS CHEM//INDIUM SEGREGATION//IN DESORPTION |
10 | 0.0000055117 | STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI |