Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
18027 | 508 | 21.9 | 76% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | BALLISTIC ELECTRON EMISSION MICROSCOPY | Author keyword | 19 | 64% | 4% | 18 |
2 | BALLISTIC ELECTRON EMISSION MICROSCOPY BEEM | Author keyword | 10 | 73% | 2% | 8 |
3 | BEEM | Author keyword | 6 | 47% | 2% | 9 |
4 | SPIN VALVE TRANSISTOR | Author keyword | 4 | 67% | 1% | 4 |
5 | INFORMAT STORAGE TECHNOL GRP | Address | 4 | 28% | 2% | 11 |
6 | BALLISTIC ELECTRON EMISSION SPECTROSCOPY | Author keyword | 3 | 100% | 1% | 3 |
7 | MAT NANOSCIUMR 6251 | Address | 3 | 100% | 1% | 3 |
8 | MAGNETOCURRENT | Author keyword | 3 | 60% | 1% | 3 |
9 | HOT ELECTRON EMITTER | Author keyword | 2 | 67% | 0% | 2 |
10 | PHYS 0350 | Address | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | EMISSION MICROSCOPY | 33 | 40% | 13% | 66 |
2 | MAGNETOCURRENT | 21 | 90% | 2% | 9 |
3 | ELECTRON EMISSION MICROSCOPY | 19 | 30% | 11% | 55 |
4 | GOLD SILICON INTERFACE | 15 | 82% | 2% | 9 |
5 | MAGNETIC MICROSCOPY | 15 | 88% | 1% | 7 |
6 | SPIN VALVE TRANSISTOR | 14 | 47% | 4% | 22 |
7 | EPITAXIAL COSI2 SI111 | 12 | 86% | 1% | 6 |
8 | CONDUCTION BAND MASS | 6 | 80% | 1% | 4 |
9 | AU GAAS | 6 | 100% | 1% | 4 |
10 | BALLISTIC ELECTRON | 6 | 100% | 1% | 4 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Beem imaging and spectroscopy of buried structures in semiconductors | 2001 | 60 | 185 | 64% |
The spin-valve transistor: a review and outlook | 2003 | 96 | 73 | 42% |
Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures | 2009 | 11 | 119 | 55% |
Ballistic-electron-emission microscopy: A nanometer-scale probe of interfaces and carrier transport | 1996 | 67 | 100 | 74% |
Theory of ballistic electron emission microscopy | 2001 | 28 | 54 | 65% |
Hot electron spectroscopy and microscopy | 2004 | 19 | 138 | 43% |
BALLISTIC-ELECTRON-EMISSION MICROSCOPY (BEEM) - STUDIES OF METAL-SEMICONDUCTOR INTERFACES WITH NANOMETER RESOLUTION | 1995 | 21 | 87 | 68% |
Ballistic-electron-emission microscopy of semiconductor heterostructures | 1998 | 0 | 43 | 93% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | INFORMAT STORAGE TECHNOL GRP | 4 | 28% | 2.2% | 11 |
2 | MAT NANOSCIUMR 6251 | 3 | 100% | 0.6% | 3 |
3 | PHYS 0350 | 2 | 67% | 0.4% | 2 |
4 | GORDON MCKAY PL SCI | 2 | 25% | 1.4% | 7 |
5 | MIKROSTRUKTURZENTRUM | 2 | 25% | 1.2% | 6 |
6 | FESTKORPERELEKT MIKROSTUKTURZENTRUM | 1 | 100% | 0.4% | 2 |
7 | FESTKORPERELEKTRON MIKROSTUKTURZENTRUM | 1 | 100% | 0.4% | 2 |
8 | MIKROSTRUKT ZENTRUM | 1 | 100% | 0.4% | 2 |
9 | MIKROSTUKTURZENTRUM | 1 | 100% | 0.4% | 2 |
10 | FESTKORPERELEKT MIKROSTRUKTURZENTRUM | 1 | 33% | 0.4% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000124864 | NANOMETER SIZED SCHOTTKY CONTACT//METAL DOT ARRAY//NANO DIODE |
2 | 0.0000103137 | SPIN INJECTION//NON LOCAL MEASUREMENT//SPIN ACCUMULATION |
3 | 0.0000101082 | GRP ORGAN OPTOELECT DEVICES//VERTICAL TYPE TRANSISTOR//METAL BASE TRANSISTOR MBT |
4 | 0.0000099587 | VALENCE BAND DENSITY OF STATES//SURFACE MAGNETO OPTIC KERR EFFECT//METAL SEMICONDUCTOR THIN FILM |
5 | 0.0000093412 | SPIN SEM//SP SEM//SPIN POLARIZED HE 4 IONS |
6 | 0.0000089974 | POROUS POLYSILICON//BALLISTIC EMISSION//SENSOR ACTUATOR SYST ISAS |
7 | 0.0000080734 | BACKWARD DIODES//MILLIMETER WAVE DETECTORS//BULK BARRIER DIODES |
8 | 0.0000072591 | LASER MOL BEAM EPITAXY//PTSI//IRIDIUM SILICIDES |
9 | 0.0000068744 | SERIES RESISTANCE//BARRIER INHOMOGENEITY//IDEALITY FACTOR |
10 | 0.0000064036 | MAGNETIC TUNNEL JUNCTION//MAGNETIC TUNNEL JUNCTIONS//TUNNELING MAGNETORESISTANCE |