Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
18025 | 508 | 25.3 | 82% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | GAN SURFACES | Author keyword | 2 | 67% | 0% | 2 |
2 | INTERDISCIPLINARY MODELLING | Address | 2 | 67% | 0% | 2 |
3 | INTERDISCIPLINARY MAT MODELLING | Address | 2 | 19% | 2% | 8 |
4 | GAN0001 | Author keyword | 2 | 43% | 1% | 3 |
5 | ADV MAT SYNTH | Address | 1 | 38% | 1% | 3 |
6 | HYDROGEN VAPOR PHASE EPITAXY | Author keyword | 1 | 100% | 0% | 2 |
7 | GEMA GRP ESTUDIO MAT | Address | 1 | 33% | 1% | 3 |
8 | LIRE | Author keyword | 1 | 33% | 0% | 2 |
9 | N POLAR | Author keyword | 1 | 16% | 1% | 4 |
10 | ADV MAT SYNTHESIS | Address | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAN SURFACES | 2 | 67% | 0% | 2 | Search GAN+SURFACES | Search GAN+SURFACES |
2 | GAN0001 | 2 | 43% | 1% | 3 | Search GAN0001 | Search GAN0001 |
3 | HYDROGEN VAPOR PHASE EPITAXY | 1 | 100% | 0% | 2 | Search HYDROGEN+VAPOR+PHASE+EPITAXY | Search HYDROGEN+VAPOR+PHASE+EPITAXY |
4 | LIRE | 1 | 33% | 0% | 2 | Search LIRE | Search LIRE |
5 | N POLAR | 1 | 16% | 1% | 4 | Search N+POLAR | Search N+POLAR |
6 | ALN SURFACE | 1 | 50% | 0% | 1 | Search ALN+SURFACE | Search ALN+SURFACE |
7 | ATMOSPHERIC CONDITION OF HYDROGEN | 1 | 50% | 0% | 1 | Search ATMOSPHERIC+CONDITION+OF+HYDROGEN | Search ATMOSPHERIC+CONDITION+OF+HYDROGEN |
8 | DYNAMICAL THEORY OF SCATTERING | 1 | 50% | 0% | 1 | Search DYNAMICAL+THEORY+OF+SCATTERING | Search DYNAMICAL+THEORY+OF+SCATTERING |
9 | GA SURFACES | 1 | 50% | 0% | 1 | Search GA+SURFACES | Search GA+SURFACES |
10 | GA SURFACTANT EFFECT | 1 | 50% | 0% | 1 | Search GA+SURFACTANT+EFFECT | Search GA+SURFACTANT+EFFECT |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | GAN0001 | 26 | 34% | 12% | 62 |
2 | GAN0001 SURFACES | 25 | 75% | 4% | 18 |
3 | GAN0001OVER BAR SURFACE | 10 | 58% | 2% | 11 |
4 | GAN0001 SURFACE | 8 | 56% | 2% | 10 |
5 | GHOST ISLANDS | 6 | 80% | 1% | 4 |
6 | GAN0001OVER BAR | 6 | 71% | 1% | 5 |
7 | SURFACE MORPHOLOGIES | 4 | 28% | 3% | 13 |
8 | P TYPE GAN0001 | 4 | 75% | 1% | 3 |
9 | GAN SURFACES | 4 | 22% | 3% | 15 |
10 | GAN0001 1X1 SURFACE | 3 | 43% | 1% | 6 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Recent progress in metal-organic chemical vapor deposition of (000(1)over-bar) N-polar group-III nitrides | 2014 | 3 | 155 | 27% |
Review of structure of bare and adsorbate-covered GaN(0001) surfaces | 2002 | 39 | 74 | 51% |
Surface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach | 2013 | 3 | 110 | 22% |
Ab initio analysis of surface structure and adatom kinetics of group-III nitrides | 2001 | 34 | 48 | 23% |
Review: GaN growth by ammonia based methods - density functional theory study | 2009 | 5 | 43 | 28% |
Theoretical study of Ni adsorption on the GaN(0001) surface | 2010 | 2 | 24 | 25% |
N-limited versus Ga-limited growth on GaN(0001) by MBE using NH3 | 1998 | 30 | 19 | 26% |
Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth | 2004 | 3 | 82 | 27% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | INTERDISCIPLINARY MODELLING | 2 | 67% | 0.4% | 2 |
2 | INTERDISCIPLINARY MAT MODELLING | 2 | 19% | 1.6% | 8 |
3 | ADV MAT SYNTH | 1 | 38% | 0.6% | 3 |
4 | GEMA GRP ESTUDIO MAT | 1 | 33% | 0.6% | 3 |
5 | ADV MAT SYNTHESIS | 1 | 50% | 0.2% | 1 |
6 | E E ENGN | 1 | 50% | 0.2% | 1 |
7 | FESTKORPERPHYS EW6 1 | 1 | 50% | 0.2% | 1 |
8 | PHY MAT SCI | 1 | 50% | 0.2% | 1 |
9 | SUR E PHYS NANOSTRUCT HETEROEPITAXY | 1 | 50% | 0.2% | 1 |
10 | CORP PHOTON | 1 | 13% | 1.0% | 5 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000264597 | GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH |
2 | 0.0000179231 | CUBIC GAN//FB PHYS 6//HEXAGONAL GAN |
3 | 0.0000165533 | TORAT PROSTHET DENT SECT//NCSU UNC CH JOINT BIOMED ENGN//IMMUNOFET |
4 | 0.0000165493 | SPMM//PHOTON MULTISCALE NANOMAT//BUILT IN FIELDS |
5 | 0.0000158407 | A PLANE GAN//LED TECHNOL//NONPOLAR |
6 | 0.0000157667 | P GAN//OHMIC CONTACT//OHMIC CONTACTS |
7 | 0.0000138910 | INN//INDIUM NITRIDE//INN PROJECT |
8 | 0.0000128502 | OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//YELLOW LUMINESCENCE//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH |
9 | 0.0000119523 | ACT OPTOGAN//INGAAS ALASSB//FESTA S |
10 | 0.0000109796 | SI111 SUBSTRATES//SI111 SUBSTRATE//ALN BUFFER |