Class information for:
Level 1: STRAINED SI//SIGE//STRAINED SILICON

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
1799 2411 20.0 70%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
769 11658 SIGE//GERMANIUM//STRAINED SI

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 STRAINED SI Author keyword 86 48% 6% 133
2 SIGE Author keyword 50 17% 11% 275
3 STRAINED SILICON Author keyword 36 36% 3% 82
4 VIRTUAL SUBSTRATE Author keyword 30 64% 1% 29
5 SILICON NANOSCI Address 29 48% 2% 44
6 SIGE ON INSULATOR Author keyword 23 70% 1% 19
7 GE CONDENSATION Author keyword 23 74% 1% 17
8 STRAINED SI SIGE Author keyword 21 90% 0% 9
9 CRYSTAL SCI TECHNOL Address 20 31% 2% 52
10 SGOI Author keyword 17 59% 1% 19

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 STRAINED SI 86 48% 6% 133 Search STRAINED+SI Search STRAINED+SI
2 SIGE 50 17% 11% 275 Search SIGE Search SIGE
3 STRAINED SILICON 36 36% 3% 82 Search STRAINED+SILICON Search STRAINED+SILICON
4 VIRTUAL SUBSTRATE 30 64% 1% 29 Search VIRTUAL+SUBSTRATE Search VIRTUAL+SUBSTRATE
5 SIGE ON INSULATOR 23 70% 1% 19 Search SIGE+ON+INSULATOR Search SIGE+ON+INSULATOR
6 GE CONDENSATION 23 74% 1% 17 Search GE+CONDENSATION Search GE+CONDENSATION
7 STRAINED SI SIGE 21 90% 0% 9 Search STRAINED+SI+SIGE Search STRAINED+SI+SIGE
8 SGOI 17 59% 1% 19 Search SGOI Search SGOI
9 STRAIN RELAXATION 14 20% 3% 63 Search STRAIN+RELAXATION Search STRAIN+RELAXATION
10 STRAINED GE 11 60% 0% 12 Search STRAINED+GE Search STRAINED+GE

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SI SIGE HETEROSTRUCTURES 92 69% 3% 79
2 STRAINED SI 58 42% 4% 107
3 MODULATION DOPED SI SIGE 53 95% 1% 18
4 GEXSI1 X LAYERS 33 75% 1% 24
5 SIGE 28 23% 4% 104
6 HIGH GE FRACTION 27 78% 1% 18
7 MOBILITY ENHANCEMENT 26 35% 2% 60
8 SI SIGE 23 43% 2% 40
9 GESI STRAINED LAYERS 21 85% 0% 11
10 SI BUFFERS 20 100% 0% 9

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors 2005 443 104 76%
High-mobility Si and Ge structures 1997 524 105 55%
Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys 1996 785 57 49%
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors 2007 132 52 35%
Si/SiGe heterostructures: from material and physics to devices and circuits 2004 244 139 43%
Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs 2009 119 49 20%
Impact strain engineering on gate stack quality and reliability 2008 31 56 52%
Mobility-enhancement technologies 2005 54 35 63%
Silicon-germanium strained layer materials in microelectronics 1999 97 72 44%
Strained-Si heterostructure field effect transistors 1998 70 89 71%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SILICON NANOSCI 29 48% 1.8% 44
2 CRYSTAL SCI TECHNOL 20 31% 2.2% 52
3 ADV S 14 26% 2.0% 48
4 WIDE BAND G SEMICOND MAT DEVICES 8 16% 1.9% 47
5 PALAZ 4 67% 0.2% 4
6 SIGE DEVICE TEAM 4 50% 0.2% 6
7 SILICON NANO SCI 3 57% 0.2% 4
8 ELECT ECE 3 18% 0.6% 14
9 PETER GRUNBERG PGI 9 IT 9 3 60% 0.1% 3
10 DPTS 2 33% 0.2% 6

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000205548 STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI
2 0.0000167727 SI1 YCY//SI1 X YGEXCY//SICGE
3 0.0000162703 MISFIT DISLOCATIONS//GRADED BUFFER LAYER//DISLOCATION COMPENSATION
4 0.0000143091 GESN//L NESS//GERMANIUM TIN
5 0.0000130810 NETWORK COMPUTAT NANOTECHNOL//QUASI BALLISTIC TRANSPORT//JOURNAL OF COMPUTATIONAL ELECTRONICS
6 0.0000125101 CERAM PHYS//RIN//CONCENTRATED STRESS
7 0.0000113825 POLY SIGE//POLY SI1 XGEX//POLYCRYSTALLINE SILICON GERMANIUM
8 0.0000105936 ATOMIC LAYER DOPING//SI EPITAXIAL GROWTH//GERMANIUM SILICON COMPOUNDS
9 0.0000099584 SIGE SINGLE CRYSTAL//GERMANIUM SILICON ALLOYS//AXIAL HEAT PROCESSING
10 0.0000097376 SCHOTTKY BARRIER SB//DOPANT SEGREGATION DS//SCHOTTKY BARRIER SB MOSFET