Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
179 | 3953 | 26.1 | 77% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1948 | 5188 | RESISTIVE SWITCHING//RESISTIVE RANDOM ACCESS MEMORY RRAM//MEMRISTOR |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | Author keyword | 690 | 75% | 13% | 497 |
2 | RESISTIVE RANDOM ACCESS MEMORY RRAM | Author keyword | 297 | 92% | 3% | 120 |
3 | MEMRISTOR | Author keyword | 245 | 52% | 8% | 329 |
4 | RRAM | Author keyword | 164 | 60% | 5% | 180 |
5 | RERAM | Author keyword | 105 | 63% | 3% | 104 |
6 | RESISTANCE SWITCHING | Author keyword | 103 | 65% | 3% | 99 |
7 | RESISTIVE SWITCHING RS | Author keyword | 99 | 97% | 1% | 29 |
8 | RESISTIVE RANDOM ACCESS MEMORY | Author keyword | 82 | 82% | 1% | 47 |
9 | RESISTIVE MEMORY | Author keyword | 62 | 67% | 1% | 56 |
10 | RESISTIVE RANDOM ACCESS MEMORY RERAM | Author keyword | 59 | 84% | 1% | 32 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | 690 | 75% | 13% | 497 | Search RESISTIVE+SWITCHING | Search RESISTIVE+SWITCHING |
2 | RESISTIVE RANDOM ACCESS MEMORY RRAM | 297 | 92% | 3% | 120 | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM |
3 | MEMRISTOR | 245 | 52% | 8% | 329 | Search MEMRISTOR | Search MEMRISTOR |
4 | RRAM | 164 | 60% | 5% | 180 | Search RRAM | Search RRAM |
5 | RERAM | 105 | 63% | 3% | 104 | Search RERAM | Search RERAM |
6 | RESISTANCE SWITCHING | 103 | 65% | 3% | 99 | Search RESISTANCE+SWITCHING | Search RESISTANCE+SWITCHING |
7 | RESISTIVE SWITCHING RS | 99 | 97% | 1% | 29 | Search RESISTIVE+SWITCHING+RS | Search RESISTIVE+SWITCHING+RS |
8 | RESISTIVE RANDOM ACCESS MEMORY | 82 | 82% | 1% | 47 | Search RESISTIVE+RANDOM+ACCESS+MEMORY | Search RESISTIVE+RANDOM+ACCESS+MEMORY |
9 | RESISTIVE MEMORY | 62 | 67% | 1% | 56 | Search RESISTIVE+MEMORY | Search RESISTIVE+MEMORY |
10 | RESISTIVE RANDOM ACCESS MEMORY RERAM | 59 | 84% | 1% | 32 | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RERAM | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RERAM |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | RRAM | 428 | 87% | 5% | 211 |
2 | RERAM | 171 | 95% | 1% | 57 |
3 | RESISTIVE SWITCHING MEMORIES | 132 | 66% | 3% | 124 |
4 | MEMRISTOR | 108 | 49% | 4% | 161 |
5 | ELECTROLYTE BASED RERAM | 82 | 92% | 1% | 33 |
6 | NANOFILAMENTS | 76 | 67% | 2% | 68 |
7 | NON VOLATILE MEMORY | 75 | 29% | 6% | 218 |
8 | NIO FILMS | 71 | 57% | 2% | 83 |
9 | SWITCHING MEMORIES | 70 | 82% | 1% | 41 |
10 | RESISTIVE SWITCHING MEMORY | 65 | 84% | 1% | 36 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Memristive devices for computing | 2013 | 317 | 125 | 82% |
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance | 2014 | 51 | 384 | 73% |
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges | 2009 | 1369 | 115 | 55% |
Nanoionics-based resistive switching memories | 2007 | 1806 | 54 | 52% |
Resistive switching in transition metal oxides | 2008 | 1007 | 35 | 77% |
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook | 2011 | 167 | 103 | 82% |
Emerging memories: resistive switching mechanisms and current status | 2012 | 124 | 160 | 61% |
Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale | 2014 | 12 | 91 | 78% |
Electrochemical metallization memories-fundamentals, applications, prospects | 2011 | 139 | 53 | 68% |
Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers | 2012 | 69 | 65 | 74% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | PETER GRUNBERG 7 | 35 | 81% | 0.5% | 21 |
2 | ELECT OPTOELECT | 30 | 53% | 1.0% | 40 |
3 | NANOFABRICAT NOVEL DEVICES INTEGRATED TECHN | 24 | 46% | 1.0% | 39 |
4 | WERKSTOFFE ELEKTROTECH 2 | 22 | 42% | 1.0% | 40 |
5 | PL NANOION | 21 | 90% | 0.2% | 9 |
6 | NANOFABRICAT NOVEL DEVICE INTEGRAT | 20 | 59% | 0.6% | 23 |
7 | NANOELECT TECHNOL | 18 | 83% | 0.3% | 10 |
8 | THIN FILM NANO TECH | 17 | 79% | 0.3% | 11 |
9 | THIN FILM NANO TECHNOL | 15 | 88% | 0.2% | 7 |
10 | TECH FAK KIEL | 12 | 75% | 0.2% | 9 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000091799 | ORGANIC MEMORY//ELECTRICAL BISTABILITY//POLYMER MEMORY |
2 | 0.0000083442 | NEUROMORPHIC NETWORKS//ELECTRONIC NANOTECHNOLOGY//CMOL |
3 | 0.0000048811 | LACUNAR SPINEL//GAV4S8//METAL CLUSTER COMPOUND |
4 | 0.0000043155 | ANTIFUSE//SOURCE GATED TRANSISTOR SGT//MULTITIME PROGRAMMABLE MTP |
5 | 0.0000040436 | ADV MAT PHOTOELECT//PHOTOCARRIER INJECTION//LASER INDUCED VOLTAGE |
6 | 0.0000033979 | FERROELECTRIC TUNNEL JUNCTION//TUNNELING ELECTRORESISTANCE//FERROELECTRIC TUNNEL JUNCTIONS |
7 | 0.0000032851 | AG CLUSTER FILM//METAL ISLANDS FILMS//ILLUMINATION SENSORS |
8 | 0.0000029238 | ELECTRORESISTANCE//ELECTRORESISTANCE EFFECT//PROV PIEZOELECT CERAM MAT PARATUS |
9 | 0.0000027195 | ADDRESS EVENT REPRESENTATION AER//NEUROMORPHIC ENGINEERING//EVENT BASED VISION |
10 | 0.0000026230 | GE2SB2TE5//PHASE CHANGE MEMORY PCM//PHASE CHANGE MEMORY |