Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
17235 | 546 | 20.8 | 67% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | EPITAXIAL SEMICOND GRP | Address | 2 | 50% | 1% | 3 |
2 | EXP SOLID STATE PHYS 3 | Address | 1 | 50% | 0% | 2 |
3 | RECIPROCAL SPACE ANALYSIS | Author keyword | 1 | 100% | 0% | 2 |
4 | DONOR ACCEPTOR TRANSITIONS | Author keyword | 1 | 50% | 0% | 1 |
5 | ECOLOGICAL GLASS | Author keyword | 1 | 50% | 0% | 1 |
6 | FREE AND BOUND EXCITONS | Author keyword | 1 | 50% | 0% | 1 |
7 | GILDA CRG ESRF | Address | 1 | 50% | 0% | 1 |
8 | LOW DIMENSIONAL SEMICOND STRUCT | Address | 1 | 50% | 0% | 1 |
9 | MAGNETOPOLARON EFFECT | Author keyword | 1 | 50% | 0% | 1 |
10 | MAT ECE | Address | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | HOMOEPITAXIAL GAN | 14 | 41% | 5% | 26 |
2 | SELECTIVE PHOTOLUMINESCENCE | 6 | 80% | 1% | 4 |
3 | YELLOW LUMINESCENCE TRANSITIONS | 6 | 53% | 1% | 8 |
4 | EXCITON REGION | 3 | 50% | 1% | 4 |
5 | DONOR BOUND EXCITON | 3 | 42% | 1% | 5 |
6 | EXCITONIC TRANSITIONS | 2 | 19% | 2% | 11 |
7 | RESOLVED 4 WAVE MIXING TECHNIQUE | 1 | 100% | 0% | 2 |
8 | ZNO BUFFER | 1 | 100% | 0% | 2 |
9 | EXCITON RECOMBINATION DYNAMICS | 1 | 33% | 0% | 2 |
10 | ZEEMAN SPECTROSCOPY | 1 | 12% | 1% | 6 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Recombination of free and bound excitons in GaN | 2008 | 41 | 72 | 51% |
Photoluminescence studies of excitonic transitions in GaN epitaxial layers | 1998 | 79 | 83 | 40% |
Influence of electron-phonon interaction on the optical properties of III nitride semiconductors | 2001 | 75 | 88 | 20% |
Carrier recombination under one-photon and two-photon excitation in GaN epilayers | 2009 | 0 | 8 | 63% |
Stress effects on optical properties | 1999 | 38 | 67 | 25% |
Optical properties of GaN | 1998 | 16 | 84 | 31% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | EPITAXIAL SEMICOND GRP | 2 | 50% | 0.5% | 3 |
2 | EXP SOLID STATE PHYS 3 | 1 | 50% | 0.4% | 2 |
3 | GILDA CRG ESRF | 1 | 50% | 0.2% | 1 |
4 | LOW DIMENSIONAL SEMICOND STRUCT | 1 | 50% | 0.2% | 1 |
5 | MAT ECE | 1 | 50% | 0.2% | 1 |
6 | MLPA | 1 | 50% | 0.2% | 1 |
7 | UTS FIS | 1 | 50% | 0.2% | 1 |
8 | WAFER MFG | 1 | 50% | 0.2% | 1 |
9 | HBEREICH PHYS WISSEN AFTL | 0 | 33% | 0.2% | 1 |
10 | STATE MESOSCOPIC PHYS | 0 | 33% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000258661 | GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH |
2 | 0.0000249795 | OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//YELLOW LUMINESCENCE//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH |
3 | 0.0000154168 | CUBIC GAN//FB PHYS 6//HEXAGONAL GAN |
4 | 0.0000139034 | A PLANE GAN//LED TECHNOL//NONPOLAR |
5 | 0.0000135846 | FLUCTUAT//PLANAR GUNN DIODE//ELLIPSOIDAL VALLEYS |
6 | 0.0000130803 | INGAN//EFFICIENCY DROOP//ELECTRON BLOCKING LAYER EBL |
7 | 0.0000126648 | GAASSB//PHOTON INFORMAT ENGN//NON MARKOVIAN GAIN MODEL |
8 | 0.0000108285 | GAN NANOWIRES//AMMONIATING//GAN NANORODS |
9 | 0.0000105416 | SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN |
10 | 0.0000105394 | LIGAO2//AMORPHOUS GAN//NON POLAR NITRIDES |