Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1717 | 2441 | 14.1 | 63% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1700 | 6150 | HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | HETEROJUNCTION BIPOLAR TRANSISTORS | Author keyword | 51 | 32% | 5% | 129 |
2 | HETEROJUNCTION BIPOLAR TRANSISTOR | Author keyword | 43 | 36% | 4% | 96 |
3 | HBT | Author keyword | 36 | 22% | 6% | 146 |
4 | HETEROJUNCTION BIPOLAR TRANSISTOR HBT | Author keyword | 29 | 30% | 3% | 82 |
5 | HETEROJUNCTION BIPOLAR TRANSISTORS HBTS | Author keyword | 27 | 38% | 2% | 57 |
6 | POTENTIAL SPIKE | Author keyword | 27 | 76% | 1% | 19 |
7 | BASE COLLECTOR CAPACITANCE | Author keyword | 21 | 90% | 0% | 9 |
8 | BIPOLAR DEVICES | Author keyword | 17 | 36% | 2% | 38 |
9 | INP INGAAS | Author keyword | 16 | 54% | 1% | 21 |
10 | OFFSET VOLTAGE | Author keyword | 15 | 35% | 1% | 36 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HETEROJUNCTION BIPOLAR TRANSISTORS | 51 | 32% | 5% | 129 | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS |
2 | HETEROJUNCTION BIPOLAR TRANSISTOR | 43 | 36% | 4% | 96 | Search HETEROJUNCTION+BIPOLAR+TRANSISTOR | Search HETEROJUNCTION+BIPOLAR+TRANSISTOR |
3 | HBT | 36 | 22% | 6% | 146 | Search HBT | Search HBT |
4 | HETEROJUNCTION BIPOLAR TRANSISTOR HBT | 29 | 30% | 3% | 82 | Search HETEROJUNCTION+BIPOLAR+TRANSISTOR+HBT | Search HETEROJUNCTION+BIPOLAR+TRANSISTOR+HBT |
5 | HETEROJUNCTION BIPOLAR TRANSISTORS HBTS | 27 | 38% | 2% | 57 | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS | Search HETEROJUNCTION+BIPOLAR+TRANSISTORS+HBTS |
6 | POTENTIAL SPIKE | 27 | 76% | 1% | 19 | Search POTENTIAL+SPIKE | Search POTENTIAL+SPIKE |
7 | BASE COLLECTOR CAPACITANCE | 21 | 90% | 0% | 9 | Search BASE+COLLECTOR+CAPACITANCE | Search BASE+COLLECTOR+CAPACITANCE |
8 | BIPOLAR DEVICES | 17 | 36% | 2% | 38 | Search BIPOLAR+DEVICES | Search BIPOLAR+DEVICES |
9 | INP INGAAS | 16 | 54% | 1% | 21 | Search INP+INGAAS | Search INP+INGAAS |
10 | OFFSET VOLTAGE | 15 | 35% | 1% | 36 | Search OFFSET+VOLTAGE | Search OFFSET+VOLTAGE |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | HETEROJUNCTION BIPOLAR TRANSISTORS | 147 | 33% | 15% | 366 |
2 | HBTS | 133 | 45% | 9% | 221 |
3 | CURRENT GAIN | 97 | 54% | 5% | 125 |
4 | OFFSET VOLTAGE | 85 | 79% | 2% | 55 |
5 | SURFACE RECOMBINATION CURRENT | 49 | 94% | 1% | 17 |
6 | ALGAAS GAAS HBTS | 28 | 57% | 1% | 33 |
7 | DHBTS | 22 | 66% | 1% | 21 |
8 | HBT | 21 | 38% | 2% | 44 |
9 | DC CHARACTERISTICS | 21 | 73% | 1% | 16 |
10 | ALGAAS GAAS | 19 | 37% | 2% | 42 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
GAAS HBTS FOR MICROWAVE INTEGRATED-CIRCUITS | 1993 | 16 | 50 | 80% |
Performance enhancement of a heterojunction bipolar transistor (HBT) by two-step passivation | 2006 | 0 | 8 | 88% |
Reliability issues in III-V compound semiconductor devices: optical devices and GaAs-based HBTs | 1999 | 20 | 22 | 18% |
Reliability of III-V based heterojunction bipolar transistors | 1998 | 1 | 33 | 67% |
EARLY VOLTAGE IN HETEROJUNCTION BIPOLAR-TRANSISTORS - QUANTUM TUNNELING AND BASE RECOMBINATION EFFECTS | 1995 | 2 | 9 | 56% |
SEMICONDUCTOR HETEROJUNCTION TOPICS - INTRODUCTION AND OVERVIEW | 1986 | 45 | 102 | 11% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | CSDL | 7 | 50% | 0.4% | 10 |
2 | INP IC TEAM | 6 | 100% | 0.2% | 4 |
3 | WIDE BAND G SEMICOND MAT DEVICES CHIN | 4 | 75% | 0.1% | 3 |
4 | NANOTECHNOL RD | 3 | 30% | 0.3% | 7 |
5 | QNERC | 2 | 67% | 0.1% | 2 |
6 | RF OEICS | 2 | 67% | 0.1% | 2 |
7 | ULTRA HIGH SPEED COMMUN IC TEAM | 2 | 67% | 0.1% | 2 |
8 | MICROWAVE PLICAT | 2 | 21% | 0.3% | 8 |
9 | MICROWAVE IC | 2 | 43% | 0.1% | 3 |
10 | MICROELECT IXL | 2 | 33% | 0.2% | 4 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000232954 | CARBON DOPING//CBR4//C DOPED GAAS |
2 | 0.0000201095 | A AMA MICROELECT SCI TECHNOL//SIGEHBT//SIGE HBT |
3 | 0.0000110989 | P INGAN//GAN SIC HETEROJUNCTION//COMMON EMITTER |
4 | 0.0000092761 | HETEROJUNCTION PHOTOTRANSISTOR HPT//HETEROJUNCTION PHOTOTRANSISTOR//OPTICALLY CONTROLLED MESFET |
5 | 0.0000090910 | DECISION CIRCUITS//DEMULTIPLEXING EQUIPMENT//MIKROELEKT ZENTRUM A |
6 | 0.0000075570 | TRANSISTOR LASER//TRANSISTOR LASER TL//MICRONANOSYST TECHNOL |
7 | 0.0000071894 | BACKWARD DIODES//MILLIMETER WAVE DETECTORS//BULK BARRIER DIODES |
8 | 0.0000058938 | OPTOELECTRONIC INTEGRATED DEVICE//OPTICAL FUNCTIONAL DEVICE//LIGHT EMITTING THYRISTOR |
9 | 0.0000048255 | PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF |
10 | 0.0000046518 | CD4GESE6//ELECTRICITY PROPERTIES//ELECTROCHEMICAL C V PROFILING |