Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1684 | 2456 | 19.7 | 52% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
913 | 10550 | EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | EL2 | Author keyword | 19 | 51% | 1% | 26 |
2 | CARBON ACCEPTOR | Author keyword | 6 | 100% | 0% | 4 |
3 | SEMI INSULATING GALLIUM ARSENIDE | Author keyword | 5 | 60% | 0% | 6 |
4 | LEC | Author keyword | 4 | 22% | 1% | 15 |
5 | LIQUID ENCAPSULATED CZOCHRALSKI METHOD | Author keyword | 3 | 35% | 0% | 8 |
6 | LOW EPD | Author keyword | 3 | 100% | 0% | 3 |
7 | SEMIINSULATING GALLIUM ARSENIDE | Author keyword | 3 | 100% | 0% | 3 |
8 | THERMAL BAFFLE | Author keyword | 3 | 100% | 0% | 3 |
9 | SEMI INSULATING GAAS | Author keyword | 3 | 23% | 0% | 12 |
10 | VCZ | Author keyword | 3 | 45% | 0% | 5 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | EL2 | 19 | 51% | 1% | 26 | Search EL2 | Search EL2 |
2 | CARBON ACCEPTOR | 6 | 100% | 0% | 4 | Search CARBON+ACCEPTOR | Search CARBON+ACCEPTOR |
3 | SEMI INSULATING GALLIUM ARSENIDE | 5 | 60% | 0% | 6 | Search SEMI+INSULATING+GALLIUM+ARSENIDE | Search SEMI+INSULATING+GALLIUM+ARSENIDE |
4 | LEC | 4 | 22% | 1% | 15 | Search LEC | Search LEC |
5 | LIQUID ENCAPSULATED CZOCHRALSKI METHOD | 3 | 35% | 0% | 8 | Search LIQUID+ENCAPSULATED+CZOCHRALSKI+METHOD | Search LIQUID+ENCAPSULATED+CZOCHRALSKI+METHOD |
6 | LOW EPD | 3 | 100% | 0% | 3 | Search LOW+EPD | Search LOW+EPD |
7 | SEMIINSULATING GALLIUM ARSENIDE | 3 | 100% | 0% | 3 | Search SEMIINSULATING+GALLIUM+ARSENIDE | Search SEMIINSULATING+GALLIUM+ARSENIDE |
8 | THERMAL BAFFLE | 3 | 100% | 0% | 3 | Search THERMAL+BAFFLE | Search THERMAL+BAFFLE |
9 | SEMI INSULATING GAAS | 3 | 23% | 0% | 12 | Search SEMI+INSULATING+GAAS | Search SEMI+INSULATING+GAAS |
10 | VCZ | 3 | 45% | 0% | 5 | Search VCZ | Search VCZ |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SEMI INSULATING GAAS | 101 | 52% | 6% | 136 |
2 | ENCAPSULATED CZOCHRALSKI GAAS | 61 | 78% | 2% | 40 |
3 | EL2 | 51 | 39% | 4% | 104 |
4 | LIQUID ENCAPSULATED CZOCHRALSKI | 42 | 94% | 1% | 15 |
5 | ARSENIC ANTISITE DEFECT | 33 | 53% | 2% | 44 |
6 | SEMIINSULATING GAAS | 29 | 25% | 4% | 101 |
7 | LEC GAAS | 29 | 71% | 1% | 24 |
8 | ASGA | 27 | 78% | 1% | 18 |
9 | PULLED GAAS | 23 | 79% | 1% | 15 |
10 | GAAS CRYSTALS | 16 | 36% | 1% | 36 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Growth of semi-insulating GaAs crystals in low temperature gradients by using the Vapour Pressure Controlled Czochralski Method (VCz) | 2001 | 21 | 54 | 72% |
A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide | 1999 | 69 | 99 | 32% |
NATIVE DEFECTS IN GALLIUM-ARSENIDE | 1988 | 215 | 160 | 66% |
EL2 DEFECT IN GAAS | 1993 | 35 | 92 | 87% |
THE LATTICE LOCATIONS OF SILICON IMPURITIES IN GAAS - EFFECTS DUE TO STOICHIOMETRY, THE FERMI ENERGY, THE SOLUBILITY LIMIT AND DX BEHAVIOR | 1994 | 57 | 44 | 23% |
THE EL2 DEFECT IN GAAS - SOME RECENT DEVELOPMENTS | 1989 | 61 | 112 | 74% |
Vapour pressure controlled Czochralski (VCZ) growth - A method to produce electronic materials with low dislocation density | 1997 | 9 | 22 | 77% |
LOCAL VIBRATIONAL-MODE SPECTROSCOPY OF DEFECTS IN III/V COMPOUNDS | 1993 | 44 | 84 | 37% |
STRUCTURE AND METASTABILITY OF THE EL2 DEFECT IN GAAS | 1995 | 9 | 87 | 89% |
GaAs substrates for high-power diode lasers | 2000 | 2 | 27 | 81% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | FHM | 2 | 38% | 0.2% | 5 |
2 | KHERSON BRANCH | 2 | 50% | 0.1% | 3 |
3 | MAT SCI WW VI | 1 | 50% | 0.1% | 2 |
4 | SCI TECHNOL ELECT ENGN ELE | 1 | 50% | 0.1% | 2 |
5 | COMPOUND SEMICOND MAT | 1 | 40% | 0.1% | 2 |
6 | INFORMAT FUNCT | 1 | 40% | 0.1% | 2 |
7 | ELECT 13 | 1 | 50% | 0.0% | 1 |
8 | F NE MET RE STOFFE | 1 | 50% | 0.0% | 1 |
9 | FUNCT DEVICE DEV | 1 | 50% | 0.0% | 1 |
10 | JOINT CENT BUR NUCL MEASUREMENTS | 1 | 50% | 0.0% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000216967 | MAGNET SENSOR//GROUP III V EXCEPT NITRIDES//COPPER VACANCY COMPLEX |
2 | 0.0000125180 | FE DOPED INP//PHOSPHORUS VAPOR PRESSURE//WAFER ANNEALING |
3 | 0.0000107864 | OVAL DEFECTS//SEEIE//GA AS BI SOLUTION |
4 | 0.0000097280 | DRAIN CURRENT TRANSIENT//FUNCT ELEMENTS CONTROL SYST//GATE LAG |
5 | 0.0000091090 | DOT IN A WELL STRUCTURES//EXCITATION POWER DEPENDENCES//RECOMBINATION BARRIER |
6 | 0.0000089777 | LOCAL VIBRATION MODES//DIRECT FAST SCARLET 4BS//GAAS C |
7 | 0.0000086336 | SCI PROD STATE ENTERPRISE//GRADED GAP ALXGA1 XAS STRUCTURES//GAAS RADIATION DETECTOR |
8 | 0.0000082327 | MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS |
9 | 0.0000081850 | MAGNETIC FIELD ASSISTED CZOCHRALSKI METHOD//CZOCHRALSKI METHOD//CZOCHRALSKI CRYSTAL GROWTH |
10 | 0.0000072762 | LT GAAS//LOW TEMPERATURE GROWN GAAS//LOW TEMPERATURE GAAS |