Class information for:
Level 1: SOCIOTECHNO SCI TECHNOL//N GAN//GALLIUM HYDROXIDE

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
16686 576 18.1 80%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
33 32935 GAN//NITRIDES//GALLIUM NITRIDE

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SOCIOTECHNO SCI TECHNOL Address 26 87% 2% 13
2 N GAN Author keyword 2 28% 1% 7
3 GALLIUM HYDROXIDE Author keyword 2 67% 0% 2
4 MAT STUDY TESTING Address 2 16% 2% 12
5 NAT MAT STUDY TESTING Address 1 100% 0% 2
6 REACTIVE ION PLASMA Author keyword 1 50% 0% 2
7 SEMICOND TECHNOL SCI Address 1 100% 0% 2
8 SOCIO TECHNO SCI TECHNOL Address 1 100% 0% 2
9 ELECT ENGN NANOTECHNOL Address 1 13% 1% 8
10 PHOTOELECTROCHEMICAL ETCHING Author keyword 1 16% 1% 6

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class		 LCSH search Wikipedia search
1 N GAN 2 28% 1% 7 Search N+GAN Search N+GAN
2 GALLIUM HYDROXIDE 2 67% 0% 2 Search GALLIUM+HYDROXIDE Search GALLIUM+HYDROXIDE
3 REACTIVE ION PLASMA 1 50% 0% 2 Search REACTIVE+ION+PLASMA Search REACTIVE+ION+PLASMA
4 PHOTOELECTROCHEMICAL ETCHING 1 16% 1% 6 Search PHOTOELECTROCHEMICAL+ETCHING Search PHOTOELECTROCHEMICAL+ETCHING
5 TIME OF FLIGHT DISTRIBUTION 1 40% 0% 2 Search TIME+OF+FLIGHT+DISTRIBUTION Search TIME+OF+FLIGHT+DISTRIBUTION
6 REACTIVE ION BEAM ETCHING RIBE 1 33% 0% 2 Search REACTIVE+ION+BEAM+ETCHING+RIBE Search REACTIVE+ION+BEAM+ETCHING+RIBE
7 ICP ETCHING 1 12% 1% 6 Search ICP+ETCHING Search ICP+ETCHING
8 BLACK LIGHT IRRADIATION 1 50% 0% 1 Search BLACK+LIGHT+IRRADIATION Search BLACK+LIGHT+IRRADIATION
9 CL 2 AR BCL3 1 50% 0% 1 Search CL+2+AR+BCL3 Search CL+2+AR+BCL3
10 CL 2 BCL3 1 50% 0% 1 Search CL+2+BCL3 Search CL+2+BCL3

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 CL 2 AR 14 53% 3% 18
2 CL 2 BCL3 PLASMAS 9 83% 1% 5
3 DRY ETCH DAMAGE 8 39% 3% 16
4 BCL3 7 28% 4% 21
5 SURFACE CHARGE LITHOGRAPHY 3 57% 1% 4
6 GAN ETCHING DAMAGE 3 100% 1% 3
7 MAGNESIUM DIFFUSION 3 50% 1% 4
8 BCL3 BASED PLASMAS 2 67% 0% 2
9 N 2 PLASMA 2 40% 1% 4
10 ETCHING DAMAGE 2 29% 1% 5

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Wet etching of GaN, AIN, and SiC: a review 2005 267 161 24%
A review of dry etching of GaN and related materials 2000 35 6 67%
The dry etching of group III nitride wide-bandgap semiconductors 1996 32 42 50%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SOCIOTECHNO SCI TECHNOL 26 87% 2.3% 13
2 MAT STUDY TESTING 2 16% 2.1% 12
3 NAT MAT STUDY TESTING 1 100% 0.3% 2
4 SEMICOND TECHNOL SCI 1 100% 0.3% 2
5 SOCIO TECHNO SCI TECHNOL 1 100% 0.3% 2
6 ELECT ENGN NANOTECHNOL 1 13% 1.4% 8
7 ADV DEVICES GRP 1 40% 0.3% 2
8 COBRA INTERUNIV COMMUN TECHNOL 1 27% 0.5% 3
9 PHOTON SEMICOND 1 27% 0.5% 3
10 JST UCSB GRP 1 33% 0.3% 2

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000242929 P INGAN//GAN SIC HETEROJUNCTION//COMMON EMITTER
2 0.0000231942 ELECTROLYTIC COPPER ADDITION//BCL3 PLASMA//FIS CHIM SUPERFICI INTER E
3 0.0000184553 P GAN//OHMIC CONTACT//OHMIC CONTACTS
4 0.0000179290 FUJIMI KU//GAAS OXIDE//REACTIVE ION BEAM ETCHING
5 0.0000175187 HIGH RESOLUTION X RAY MICROSCOPY//INNER SHELL ELECTRON EXCITATION//INTENSE X RAYS
6 0.0000173752 LIGHT EXTRACTION EFFICIENCY//LIGHT EMITTING DIODE LED//PATTERNED SAPPHIRE SUBSTRATE PSS
7 0.0000163934 OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//YELLOW LUMINESCENCE//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
8 0.0000124360 GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH
9 0.0000122111 TORAT PROSTHET DENT SECT//NCSU UNC CH JOINT BIOMED ENGN//IMMUNOFET
10 0.0000108210 POROUS INP//LOW DIMENS SEMICOND STRUCT//POROUS SIC