Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
16662 | 577 | 19.4 | 55% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | LATERAL CRYSTALLINE GROWTH | Author keyword | 2 | 67% | 0% | 2 |
2 | ACCELERATORS | Address | 1 | 27% | 1% | 3 |
3 | ION INDUCED DEFECTS | Author keyword | 1 | 33% | 0% | 2 |
4 | ALPHA FE FILM | Author keyword | 1 | 50% | 0% | 1 |
5 | BOMBARDMENT EFFECT | Author keyword | 1 | 50% | 0% | 1 |
6 | EPITAXIAL TEMPERATURE | Author keyword | 1 | 50% | 0% | 1 |
7 | HIGH TECHNOL NEW BUSINESS SYST DEV GRP | Address | 1 | 50% | 0% | 1 |
8 | LIMITING THICKNESS | Author keyword | 1 | 50% | 0% | 1 |
9 | N MOS | Author keyword | 1 | 50% | 0% | 1 |
10 | SI EFFUSION CELL | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | LATERAL CRYSTALLINE GROWTH | 2 | 67% | 0% | 2 | Search LATERAL+CRYSTALLINE+GROWTH | Search LATERAL+CRYSTALLINE+GROWTH |
2 | ION INDUCED DEFECTS | 1 | 33% | 0% | 2 | Search ION+INDUCED+DEFECTS | Search ION+INDUCED+DEFECTS |
3 | ALPHA FE FILM | 1 | 50% | 0% | 1 | Search ALPHA+FE+FILM | Search ALPHA+FE+FILM |
4 | BOMBARDMENT EFFECT | 1 | 50% | 0% | 1 | Search BOMBARDMENT+EFFECT | Search BOMBARDMENT+EFFECT |
5 | EPITAXIAL TEMPERATURE | 1 | 50% | 0% | 1 | Search EPITAXIAL+TEMPERATURE | Search EPITAXIAL+TEMPERATURE |
6 | LIMITING THICKNESS | 1 | 50% | 0% | 1 | Search LIMITING+THICKNESS | Search LIMITING+THICKNESS |
7 | N MOS | 1 | 50% | 0% | 1 | Search N+MOS | Search N+MOS |
8 | SI EFFUSION CELL | 1 | 50% | 0% | 1 | Search SI+EFFUSION+CELL | Search SI+EFFUSION+CELL |
9 | SPUTTERING SIMULATION | 1 | 50% | 0% | 1 | Search SPUTTERING+SIMULATION | Search SPUTTERING+SIMULATION |
10 | SYNCHROTRON RADIATION APPLICATION | 1 | 50% | 0% | 1 | Search SYNCHROTRON+RADIATION+APPLICATION | Search SYNCHROTRON+RADIATION+APPLICATION |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SI100 FILMS | 19 | 74% | 2% | 14 |
2 | IN IONS | 10 | 63% | 2% | 10 |
3 | QUASIDYNAMICS SIMULATIONS | 7 | 53% | 2% | 10 |
4 | PHASE CRYSTAL GROWTH | 5 | 43% | 2% | 9 |
5 | STRAIN MODIFICATION | 4 | 75% | 1% | 3 |
6 | ENERGY PARTICLE BOMBARDMENT | 4 | 36% | 1% | 8 |
7 | ATOMS INCIDENT | 3 | 57% | 1% | 4 |
8 | 4W1C | 3 | 100% | 1% | 3 |
9 | LIMITED THICKNESS EPITAXY | 3 | 100% | 1% | 3 |
10 | EV SI | 3 | 60% | 1% | 3 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
DELTA DOPING IN SILICON | 1993 | 58 | 180 | 38% |
RECENT PROGRESS IN SILICON MOLECULAR-BEAM EPITAXY | 1991 | 0 | 13 | 85% |
SILICON MOLECULAR-BEAM EPITAXY | 1983 | 65 | 21 | 48% |
PRESENT STATUS OF SOLID-PHASE EPITAXY OF VACUUM-DEPOSITED SILICON | 1989 | 18 | 52 | 31% |
SILICON MOLECULAR-BEAM EPITAXY | 1986 | 3 | 19 | 37% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ACCELERATORS | 1 | 27% | 0.5% | 3 |
2 | HIGH TECHNOL NEW BUSINESS SYST DEV GRP | 1 | 50% | 0.2% | 1 |
3 | SISC | 0 | 33% | 0.2% | 1 |
4 | HH MANNHEIM | 0 | 25% | 0.2% | 1 |
5 | MAT SCI SUR E ENGN | 0 | 25% | 0.2% | 1 |
6 | ABT SI PHOTOVOLTAIK | 0 | 13% | 0.2% | 1 |
7 | AIST ONRI | 0 | 100% | 0.2% | 1 |
8 | FREDEROCL SEITZ MAT | 0 | 100% | 0.2% | 1 |
9 | INEP IVTAN ASSOC | 0 | 100% | 0.2% | 1 |
10 | LOBACHEVSKI PHYSICOTECH | 0 | 100% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000183530 | NOVOSHAKHTINSK BRANCH//ELE OCHEM HYDROGEN ENERGY//IRON STEEL IND |
2 | 0.0000171485 | ATOMIC LAYER DOPING//SI EPITAXIAL GROWTH//GERMANIUM SILICON COMPOUNDS |
3 | 0.0000166549 | SURFACTANT MEDIATED EPITAXY//BI NANOLINES//SI100 2X1 SB |
4 | 0.0000123452 | STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI |
5 | 0.0000117632 | DELTA DOPING//SELF CONSISTENTLY//DELTA DOPED QUANTUM WELLS |
6 | 0.0000114151 | HYDROGEN SURFACTANT//AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COM//EXCELLENCE QUANTUM COMPUTAT COMMUN TECHNOL |
7 | 0.0000105375 | LANGMUIR SORPTION MODEL//ION CLUSTER BEAM DEPOSITION//IONIZED CLUSTER BEAM TECHNIQUE |
8 | 0.0000077144 | NEGATIVE ION IMPLANTATION//DELTA LAYERED NANOPARTICLES//AB INITIO MOLECULAR ORBITAL METHODS |
9 | 0.0000075570 | DAS STRUCTURE//SN GE111//SI111 7 X 7 |
10 | 0.0000071964 | IBIEC//SOLID PHASE EPITAXIAL GROWTH//LATERAL SOLID PHASE EPITAXY |