Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 16616 | 579 | 18.4 | 59% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | SCHOTTKY BARRIER SB | Author keyword | 29 | 67% | 4% | 26 |
| 2 | DOPANT SEGREGATION DS | Author keyword | 21 | 78% | 2% | 14 |
| 3 | SCHOTTKY BARRIER SB MOSFET | Author keyword | 18 | 89% | 1% | 8 |
| 4 | DOPANT SEGREGATION | Author keyword | 10 | 34% | 4% | 24 |
| 5 | SCHOTTKY BARRIER SB LOWERING | Author keyword | 8 | 100% | 1% | 5 |
| 6 | SCHOTTKY SOURCE DRAIN MOSFET | Author keyword | 8 | 100% | 1% | 5 |
| 7 | ADV I MEMS TEAM | Address | 6 | 80% | 1% | 4 |
| 8 | SILICON CARBON SIC | Author keyword | 6 | 100% | 1% | 4 |
| 9 | SCHOTTKY BARRIER MOSFET | Author keyword | 5 | 41% | 2% | 9 |
| 10 | PLATINUM SILICIDE PTSI | Author keyword | 4 | 75% | 1% | 3 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | SOURCE DRAIN | 38 | 42% | 12% | 71 |
| 2 | DRAIN STRESSORS | 33 | 100% | 2% | 13 |
| 3 | CHANNEL FINFETS | 15 | 88% | 1% | 7 |
| 4 | SILICON CARBON SOURCE DRAIN | 7 | 53% | 2% | 9 |
| 5 | SOURCE DRAIN REGIONS | 5 | 63% | 1% | 5 |
| 6 | THIN BODY | 4 | 47% | 1% | 7 |
| 7 | SCHOTTKY BARRIER SOURCE DRAIN | 4 | 67% | 1% | 4 |
| 8 | DOPANT SEGREGATED SCHOTTKY | 4 | 75% | 1% | 3 |
| 9 | NISI SI | 4 | 75% | 1% | 3 |
| 10 | DOPANT SEGREGATION | 4 | 28% | 2% | 12 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| Low-Temperature Microwave Annealing Processes for Future IC Fabrication-A Review | 2014 | 3 | 24 | 33% |
| Review Paper: Advanced Source and Drain Technologies for Low Power CMOS at 22/20 nm Node and Below | 2011 | 7 | 23 | 43% |
| Challenges of 22 nm and beyond CMOS technology | 2009 | 13 | 39 | 36% |
| Transistor scaling with novel materials | 2006 | 7 | 12 | 25% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ADV I MEMS TEAM | 6 | 80% | 0.7% | 4 |
| 2 | SILICON NANO DEVICE | 4 | 12% | 5.7% | 33 |
| 3 | U TERMINAL TEAM | 3 | 100% | 0.5% | 3 |
| 4 | DEV MICROSYST RELIABIL | 3 | 42% | 0.9% | 5 |
| 5 | SNDL | 2 | 22% | 1.6% | 9 |
| 6 | BIO NANOSYST IBNI | 2 | 67% | 0.3% | 2 |
| 7 | NANOELECT DEVICE TEAM | 2 | 43% | 0.5% | 3 |
| 8 | TECHNOL FDN GRP | 1 | 100% | 0.3% | 2 |
| 9 | SEMICOND BASIC | 1 | 29% | 0.7% | 4 |
| 10 | NANO BIO ELECT DEVICES TEAM | 1 | 40% | 0.3% | 2 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000139830 | NETWORK COMPUTAT NANOTECHNOL//QUASI BALLISTIC TRANSPORT//JOURNAL OF COMPUTATIONAL ELECTRONICS |
| 2 | 0.0000138914 | RECONFIGURABLE TRANSISTOR//RFET//SILICIDE NANOWIRES |
| 3 | 0.0000135914 | ERBIUM SILICIDE//ERSI2//YTTRIUM SILICIDE |
| 4 | 0.0000133982 | CROSS BRIDGE KELVIN RESISTOR CBKR//CROSS KELVIN RESISTOR CKR//CROSS BRIDGE KELVIN RESISTOR |
| 5 | 0.0000124365 | DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS |
| 6 | 0.0000116667 | TISI2//SALICIDE//NICKEL SILICIDE |
| 7 | 0.0000105984 | NI GERMANIDE//MBE//GERMANIUM GE |
| 8 | 0.0000097376 | STRAINED SI//SIGE//STRAINED SILICON |
| 9 | 0.0000086170 | TUNNELING FIELD EFFECT TRANSISTOR TFET//TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNEL FET TFET |
| 10 | 0.0000084154 | SI1 YCY//SI1 X YGEXCY//SICGE |