Class information for:
Level 1: ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
16439 588 18.4 60%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1317 8022 ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//SIO2 ETCHING

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ATOMIC LAYER ETCHING Author keyword 11 69% 2% 9
2 GATE CHARGING Author keyword 6 80% 1% 4
3 NEUTRAL BEAM ETCHING Author keyword 5 44% 1% 8
4 EBEP Author keyword 4 75% 1% 3
5 NEUTRAL BEAM Author keyword 4 17% 4% 21
6 CHARGING DAMAGE Author keyword 3 32% 2% 9
7 NEUTRALIZATION EFFICIENCY Author keyword 2 44% 1% 4
8 CHARGING PROTECTION Author keyword 2 67% 0% 2
9 COMPONENT GRP Address 2 67% 0% 2
10 DEUTERIUM ANNEALING Author keyword 2 67% 0% 2

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 ATOMIC LAYER ETCHING 11 69% 2% 9 Search ATOMIC+LAYER+ETCHING Search ATOMIC+LAYER+ETCHING
2 GATE CHARGING 6 80% 1% 4 Search GATE+CHARGING Search GATE+CHARGING
3 NEUTRAL BEAM ETCHING 5 44% 1% 8 Search NEUTRAL+BEAM+ETCHING Search NEUTRAL+BEAM+ETCHING
4 EBEP 4 75% 1% 3 Search EBEP Search EBEP
5 NEUTRAL BEAM 4 17% 4% 21 Search NEUTRAL+BEAM Search NEUTRAL+BEAM
6 CHARGING DAMAGE 3 32% 2% 9 Search CHARGING+DAMAGE Search CHARGING+DAMAGE
7 NEUTRALIZATION EFFICIENCY 2 44% 1% 4 Search NEUTRALIZATION+EFFICIENCY Search NEUTRALIZATION+EFFICIENCY
8 CHARGING PROTECTION 2 67% 0% 2 Search CHARGING+PROTECTION Search CHARGING+PROTECTION
9 DEUTERIUM ANNEALING 2 67% 0% 2 Search DEUTERIUM+ANNEALING Search DEUTERIUM+ANNEALING
10 ECR ION STREAM 2 67% 0% 2 Search ECR+ION+STREAM Search ECR+ION+STREAM

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 CHARGING DAMAGE 26 58% 5% 30
2 AR NEUTRAL BEAM 15 88% 1% 7
3 ETCHING SYSTEM 15 88% 1% 7
4 TIME MODULATED PLASMA 10 57% 2% 12
5 FAST ATOM BEAM 9 83% 1% 5
6 VUV PHOTONS 7 53% 2% 9
7 LOW ANGLE 6 38% 2% 13
8 GATE OXIDE DAMAGE 6 71% 1% 5
9 ULTRACLEAN ECR PLASMA 6 100% 1% 4
10 DEVICE IMAGE SENSOR 4 42% 1% 8

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
Ultimate top-down etching processes for future nanoscale devices: Advanced neutral-beam etching 2006 55 43 44%
Overview of atomic layer etching in the semiconductor industry 2015 2 90 49%
Thin gate oxide damage due to plasma processing 1996 47 13 77%
The grand challenges of plasma etching: a manufacturing perspective 2014 6 16 19%
Reliability of ultrathin gate oxides for ULSI devices 1999 9 32 41%
Modeling and Simulation of Fast Neutral Beam Sources for Materials Processing 2009 4 58 33%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 COMPONENT GRP 2 67% 0.3% 2
2 INITIAT ADV MAT 2 67% 0.3% 2
3 INTELLIGENT NANO PROC 2 67% 0.3% 2
4 CCD BUSINESS UNITDEV 1 100% 0.3% 2
5 CCD DEV 1 100% 0.3% 2
6 SEMICOND TECHNOL DEV 1 13% 1.4% 8
7 INT MICRONANO MECHATRON 1 27% 0.5% 3
8 BACK END PROC PROGRAM 1 50% 0.2% 1
9 CMOS DESIGN BACKPLANE GRP 1 50% 0.2% 1
10 DEEP SUBMICRON INTEGRATED CIRCUITS 1 50% 0.2% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000208291 ELECT DEVICES MAT TECHNOL//SIO2 ETCHING//PLASMA ETCHING
2 0.0000131876 PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION
3 0.0000116537 VIBRATING CAPACITOR//SEMICOND EQUIPMENT OPERAT//SURFACE VOLTAGE
4 0.0000108447 STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD
5 0.0000108300 CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION
6 0.0000081681 SID4//DEUTERIUM D ANNEALING//TRAP CREATION
7 0.0000071910 FUJIMI KU//GAAS OXIDE//REACTIVE ION BEAM ETCHING
8 0.0000064263 ECR PLASMA//UNIFORM PLASMA//MAGNETIC MULTIPOLE FIELD
9 0.0000061963 PLASMA LENS//PLASMA OPTICS//HALL CURRENT ACCELERATOR
10 0.0000057462 LOW K//SIOC H FILMS//PLASMA PROC TECHNOL