Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
16258 | 598 | 26.9 | 70% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
666 | 12577 | SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | CEA SERV RECH SUR ES IRRADIAT MAT | Address | 1 | 100% | 0% | 2 |
2 | CHIM ORGAN THEORIQUE | Address | 1 | 50% | 0% | 1 |
3 | DISPLAY DEVICE CO | Address | 1 | 50% | 0% | 1 |
4 | ELECT ELE ENGN TEMPA KU | Address | 1 | 50% | 0% | 1 |
5 | HYDROGEN AND OXYGEN TERMINATION | Author keyword | 1 | 50% | 0% | 1 |
6 | INITIAL STAGE OF ADSORPTION | Author keyword | 1 | 50% | 0% | 1 |
7 | LOW ENERGY DIFFRACTION LEED | Author keyword | 1 | 50% | 0% | 1 |
8 | NEW DISPLAY DEVICE | Address | 1 | 50% | 0% | 1 |
9 | PHOTOEMISSION INTENSITY | Author keyword | 1 | 50% | 0% | 1 |
10 | SATURATION COVERAGE | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SI0012X1 K SURFACE | 82 | 85% | 7% | 44 |
2 | 2X1 K SURFACE | 34 | 93% | 2% | 13 |
3 | POTASSIUM OVERLAYER | 23 | 100% | 2% | 10 |
4 | SI001 2X1 SURFACE | 18 | 53% | 4% | 24 |
5 | HELIUM METASTABLES | 18 | 89% | 1% | 8 |
6 | K ADSORPTION | 18 | 89% | 1% | 8 |
7 | POTASSIUM DOUBLE LAYER | 17 | 100% | 1% | 8 |
8 | PROMOTED OXIDATION | 16 | 45% | 5% | 27 |
9 | NA ADSORPTION | 13 | 69% | 2% | 11 |
10 | METAL PROMOTED OXIDATION | 11 | 56% | 2% | 14 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
ELECTRONIC-STRUCTURE OF SILICON SURFACES - CLEAN AND WITH ORDERED OVERLAYERS | 1991 | 85 | 188 | 21% |
THEORY OF SCHOTTKY-BARRIER AND METALLIZATION | 1991 | 16 | 80 | 41% |
FIELD ION-SCANNING TUNNELING MICROSCOPY | 1990 | 29 | 66 | 24% |
INTERACTION OF ALKALI-METALS WITH SEMICONDUCTORS | 1987 | 22 | 32 | 22% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | CEA SERV RECH SUR ES IRRADIAT MAT | 1 | 100% | 0.3% | 2 |
2 | CHIM ORGAN THEORIQUE | 1 | 50% | 0.2% | 1 |
3 | DISPLAY DEVICE CO | 1 | 50% | 0.2% | 1 |
4 | ELECT ELE ENGN TEMPA KU | 1 | 50% | 0.2% | 1 |
5 | NEW DISPLAY DEVICE | 1 | 50% | 0.2% | 1 |
6 | SOLID STATE PHYS SYNCHROTRON RADIAT | 0 | 17% | 0.3% | 2 |
7 | CAVENDISH PHYS | 0 | 25% | 0.2% | 1 |
8 | NANOSILICON GRP | 0 | 25% | 0.2% | 1 |
9 | CATALYSE CHIM SUR ES | 0 | 20% | 0.2% | 1 |
10 | STANFORD ELE S | 0 | 20% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000287378 | SUBSTITUTIONAL ADSORPTION//CU001//CHEMISORPTION OF CO |
2 | 0.0000158993 | GE001//C4 X 2//C4X2 |
3 | 0.0000155418 | INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM |
4 | 0.0000154380 | WEBSTER//ADIABATIC BOND CHARGE MODEL//INAS110 |
5 | 0.0000135437 | ATOM WI LAYERS//SI335//AU SI INTERFACE |
6 | 0.0000126619 | EPITAXIAL OXIDES//S UNICAT//SI001 SUBSTRATES |
7 | 0.0000124971 | TRANSLATIONAL KINETIC ENERGY//POINT DEFECT GENERATION//OXYGEN MOLECULAR BEAM |
8 | 0.0000121066 | ELECT ENGN OPTOELECT TECHNOL//GAN PHOTOCATHODE//GAAS PHOTOCATHODE |
9 | 0.0000110141 | DAS STRUCTURE//SN GE111//SI111 7 X 7 |
10 | 0.0000100848 | NANOMAT CHARACTERIZAT SCI PROC TECHNOL//AG CUINSE2//C T NANOMAT CHARACTERIZAT SCI PROC TECHNO |