Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 16188 | 601 | 13.3 | 42% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 1771 | 5849 | LT GAAS//ULTRAHIGH FREQUENCY SEMICOND ELECT//LOW TEMPERATURE GROWN GAAS |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | ATSUGI ELECT COMMUN S FUNCT DEVICE DEV | Address | 4 | 75% | 0% | 3 |
| 2 | INTEGRATED PROD BUSINESS UNIT | Address | 1 | 33% | 0% | 3 |
| 3 | SINGLE VOLTAGE SUPPLY | Author keyword | 1 | 33% | 0% | 3 |
| 4 | BILAYER PHOTORESIST | Author keyword | 1 | 50% | 0% | 1 |
| 5 | COMPOSITE TRIPLE BEAT CTB | Author keyword | 1 | 50% | 0% | 1 |
| 6 | DCFL CIRCUIT | Author keyword | 1 | 50% | 0% | 1 |
| 7 | ELECT ENGN MICROELE | Address | 1 | 50% | 0% | 1 |
| 8 | GATE ORIENTATION | Author keyword | 1 | 50% | 0% | 1 |
| 9 | KITAITAMI WORKS | Address | 1 | 50% | 0% | 1 |
| 10 | MICROWAVE TRANSISTOR AMPLIFIER | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | DYNAMIC FET LOGIC | 4 | 75% | 0% | 3 |
| 2 | SAINT | 2 | 31% | 1% | 5 |
| 3 | ALIGNED GATE TECHNOLOGY | 1 | 100% | 0% | 2 |
| 4 | SAG PROCESS | 1 | 100% | 0% | 2 |
| 5 | FET LOGIC | 1 | 33% | 0% | 2 |
| 6 | AS TERNARY SYSTEM | 1 | 50% | 0% | 1 |
| 7 | GATE FABRICATION | 1 | 50% | 0% | 1 |
| 8 | PSEUDODYNAMIC LATCHED LOGIC | 1 | 50% | 0% | 1 |
| 9 | SOL SPRAY DEPOSITION | 1 | 50% | 0% | 1 |
| 10 | TIN DIFFUSION BARRIER | 1 | 50% | 0% | 1 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| OPTOELECTRONIC PACKAGING | 1988 | 0 | 5 | 60% |
| THE HISTORICAL DEVELOPMENT OF GAAS-FET DIGITAL IC TECHNOLOGY | 1984 | 8 | 23 | 57% |
| MAKING GAAS INTEGRATED-CIRCUITS | 1988 | 6 | 239 | 14% |
| GIGABIT LOGIC - A REVIEW | 1982 | 3 | 50 | 56% |
| CHEMICAL AND PHYSICAL PROCESSING OF ION-IMPLANTED INTEGRATED-CIRCUITS | 1985 | 0 | 11 | 18% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ATSUGI ELECT COMMUN S FUNCT DEVICE DEV | 4 | 75% | 0.5% | 3 |
| 2 | INTEGRATED PROD BUSINESS UNIT | 1 | 33% | 0.5% | 3 |
| 3 | ELECT ENGN MICROELE | 1 | 50% | 0.2% | 1 |
| 4 | KITAITAMI WORKS | 1 | 50% | 0.2% | 1 |
| 5 | MA COM | 1 | 22% | 0.3% | 2 |
| 6 | RADIO COMMUN SYST S | 0 | 18% | 0.3% | 2 |
| 7 | DISCRETE SEMICOND | 0 | 20% | 0.2% | 1 |
| 8 | AFTY CORP | 0 | 14% | 0.2% | 1 |
| 9 | COMMUN EQUIPMENT WORKS | 0 | 13% | 0.2% | 1 |
| 10 | ATSUGI ELECT COMMUN | 0 | 11% | 0.2% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000189160 | SOLID PHASE REGROWTH//PD GE//OHMIC CONTACTS |
| 2 | 0.0000151908 | DRAIN CURRENT TRANSIENT//FUNCT ELEMENTS CONTROL SYST//GATE LAG |
| 3 | 0.0000099687 | LARGE SIGNAL MODEL//NONLINEAR MEASUREMENTS//MESFETS |
| 4 | 0.0000098849 | MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS |
| 5 | 0.0000092080 | DECISION CIRCUITS//DEMULTIPLEXING EQUIPMENT//MIKROELEKT ZENTRUM A |
| 6 | 0.0000081228 | INT MED ENGN//VLSI CIRCUIT TEST//BIAS NETWORKS |
| 7 | 0.0000081192 | PSEUDOMORPHIC MODFET//DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTOR DG HEMT//AC MOBILITY |
| 8 | 0.0000080630 | DISTRIBUTED AMPLIFIER//DISTRIBUTED AMPLIFIERS//DISTRIBUTED AMPLIFIER DA |
| 9 | 0.0000073383 | 4H SIC MESFET//MESFET//MESFETS |
| 10 | 0.0000072076 | ULTRAHIGH FREQUENCY SEMICOND ELECT//INALAS INGAAS//HIGH ELECTRON MOBILITY TRANSISTORS |