Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1617 | 2484 | 18.1 | 67% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | MICROPIPE | Author keyword | 65 | 67% | 2% | 59 |
2 | SUBLIMATION GROWTH | Author keyword | 52 | 58% | 2% | 61 |
3 | MICROPIPES | Author keyword | 46 | 67% | 2% | 41 |
4 | SEMICONDUCTING SILICON COMPOUNDS | Author keyword | 34 | 38% | 3% | 71 |
5 | SEMICONDUCTING SILICON CARBIDE | Author keyword | 33 | 83% | 1% | 19 |
6 | SIC BULK GROWTH | Author keyword | 28 | 81% | 1% | 17 |
7 | 15R SIC | Author keyword | 24 | 91% | 0% | 10 |
8 | MODIFIED LELY METHOD | Author keyword | 23 | 79% | 1% | 15 |
9 | PHYSICAL VAPOR TRANSPORT | Author keyword | 20 | 44% | 1% | 35 |
10 | GROWTH FROM VAPOR | Author keyword | 20 | 22% | 3% | 78 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | MICROPIPE | 65 | 67% | 2% | 59 | Search MICROPIPE | Search MICROPIPE |
2 | SUBLIMATION GROWTH | 52 | 58% | 2% | 61 | Search SUBLIMATION+GROWTH | Search SUBLIMATION+GROWTH |
3 | MICROPIPES | 46 | 67% | 2% | 41 | Search MICROPIPES | Search MICROPIPES |
4 | SEMICONDUCTING SILICON COMPOUNDS | 34 | 38% | 3% | 71 | Search SEMICONDUCTING+SILICON+COMPOUNDS | Search SEMICONDUCTING+SILICON+COMPOUNDS |
5 | SEMICONDUCTING SILICON CARBIDE | 33 | 83% | 1% | 19 | Search SEMICONDUCTING+SILICON+CARBIDE | Search SEMICONDUCTING+SILICON+CARBIDE |
6 | SIC BULK GROWTH | 28 | 81% | 1% | 17 | Search SIC+BULK+GROWTH | Search SIC+BULK+GROWTH |
7 | 15R SIC | 24 | 91% | 0% | 10 | Search 15R+SIC | Search 15R+SIC |
8 | MODIFIED LELY METHOD | 23 | 79% | 1% | 15 | Search MODIFIED+LELY+METHOD | Search MODIFIED+LELY+METHOD |
9 | PHYSICAL VAPOR TRANSPORT | 20 | 44% | 1% | 35 | Search PHYSICAL+VAPOR+TRANSPORT | Search PHYSICAL+VAPOR+TRANSPORT |
10 | GROWTH FROM VAPOR | 20 | 22% | 3% | 78 | Search GROWTH+FROM+VAPOR | Search GROWTH+FROM+VAPOR |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SUBLIMATION GROWTH | 103 | 59% | 5% | 115 |
2 | SIC POLYTYPES | 58 | 42% | 4% | 105 |
3 | MICROPIPES | 37 | 67% | 1% | 33 |
4 | 6H SIC SINGLE CRYSTALS | 31 | 76% | 1% | 22 |
5 | POLYTYPES | 28 | 25% | 4% | 97 |
6 | 6H | 26 | 29% | 3% | 77 |
7 | CARBIDE SINGLE CRYSTALS | 25 | 65% | 1% | 24 |
8 | MICROPIPE | 22 | 81% | 1% | 13 |
9 | SUBLIMATION EPITAXY | 21 | 61% | 1% | 23 |
10 | INCORPORATION MECHANISM | 21 | 85% | 0% | 11 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Degradation of hexagonal silicon-carbide-based bipolar devices | 2006 | 158 | 119 | 76% |
Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications | 2012 | 21 | 133 | 66% |
Heterojunctions and superlattices based on silicon carbide | 2006 | 66 | 85 | 69% |
Mechanisms of growth and defect properties of epitaxial SiC | 2014 | 2 | 141 | 70% |
Technological breakthroughs in growth control of silicon carbide for high power electronic devices | 2004 | 60 | 64 | 53% |
Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons | 2015 | 2 | 146 | 10% |
Step-controlled epitaxial growth of SiC: high quality homoepitaxy | 1997 | 277 | 97 | 43% |
Status of SiC bulk growth processes | 2007 | 12 | 65 | 91% |
Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties | 2003 | 108 | 254 | 31% |
Vapour phase growth of epitaxial silicon carbide layers | 2003 | 19 | 69 | 93% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MAT SCI 6 | 19 | 33% | 1.9% | 48 |
2 | PHYS MEASUREMENT TECHNOL | 19 | 11% | 6.7% | 167 |
3 | MAT 6 | 15 | 67% | 0.6% | 14 |
4 | UMR 5614LTPCM | 11 | 67% | 0.4% | 10 |
5 | ADV POWER DEVICE | 11 | 54% | 0.6% | 14 |
6 | UPR ULTRA LOW LOSS POWER DEVICE TECHNOL BODY | 7 | 64% | 0.3% | 7 |
7 | RD ASSOC FUTURE ELE ON DEVICES | 7 | 32% | 0.7% | 17 |
8 | ETUD SEMICOND GRP | 6 | 10% | 2.2% | 54 |
9 | LMGP | 4 | 12% | 1.3% | 33 |
10 | UJF 5614 | 4 | 75% | 0.1% | 3 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000225114 | LEHRSTUHL THEOR FESTKORPERPHYS//SEMI INSULATING SIC//TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION |
2 | 0.0000154645 | 3C SIC//FG NANOTECHNOL//HOLLOW VOID |
3 | 0.0000141209 | 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS |
4 | 0.0000139336 | SIMA//HEXAGONAL SURFACES//DSMDRECAMSPCSI |
5 | 0.0000096124 | OHMIC CONTACT//OHMIC CONTACTS//P TYPE SIC |
6 | 0.0000061377 | 4H SIC MESFET//MESFET//MESFETS |
7 | 0.0000057992 | IN FRANTZEVICH PROBLEMS MAT SCI//GROWTH TECHNIQUES//SEMICOND HETEROSTRUCT |
8 | 0.0000053153 | RADIOSITY EQUATION//NONLOCAL INTERFACE CONDITIONS//DIFFUSE GRAY RADIATION |
9 | 0.0000051970 | POROUS INP//LOW DIMENS SEMICOND STRUCT//POROUS SIC |
10 | 0.0000050845 | ISOTHERMAL CHEMICAL VAPOR INFILTRATION//PRESSURE PULSED CHEMICAL VAPOR INFILTRATION//3D IMAGE BASED MODELING |