Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
15730 | 625 | 17.3 | 53% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1342 | 7876 | EDGE DEFINED FILM FED GROWTH//MULTICRYSTALLINE SILICON//PROGRESS IN PHOTOVOLTAICS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | BANDLIKE STATES | Author keyword | 2 | 67% | 0% | 2 |
2 | DISLOCATION ENGINEERED | Author keyword | 2 | 67% | 0% | 2 |
3 | RECOMBINATION STRENGTH | Author keyword | 2 | 67% | 0% | 2 |
4 | D BANDS | Author keyword | 2 | 43% | 0% | 3 |
5 | D LINE | Author keyword | 2 | 43% | 0% | 3 |
6 | DISLOCATION ENGINEERING | Author keyword | 1 | 33% | 0% | 3 |
7 | INDIRECT BANDGAP SEMICONDUCTOR | Author keyword | 1 | 40% | 0% | 2 |
8 | SILICON GROWTH | Author keyword | 1 | 40% | 0% | 2 |
9 | JOINT IHP BTU | Address | 1 | 25% | 0% | 3 |
10 | IHP | Address | 1 | 13% | 1% | 6 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | BANDLIKE STATES | 2 | 67% | 0% | 2 | Search BANDLIKE+STATES | Search BANDLIKE+STATES |
2 | DISLOCATION ENGINEERED | 2 | 67% | 0% | 2 | Search DISLOCATION+ENGINEERED | Search DISLOCATION+ENGINEERED |
3 | RECOMBINATION STRENGTH | 2 | 67% | 0% | 2 | Search RECOMBINATION+STRENGTH | Search RECOMBINATION+STRENGTH |
4 | D BANDS | 2 | 43% | 0% | 3 | Search D+BANDS | Search D+BANDS |
5 | D LINE | 2 | 43% | 0% | 3 | Search D+LINE | Search D+LINE |
6 | DISLOCATION ENGINEERING | 1 | 33% | 0% | 3 | Search DISLOCATION+ENGINEERING | Search DISLOCATION+ENGINEERING |
7 | INDIRECT BANDGAP SEMICONDUCTOR | 1 | 40% | 0% | 2 | Search INDIRECT+BANDGAP+SEMICONDUCTOR | Search INDIRECT+BANDGAP+SEMICONDUCTOR |
8 | SILICON GROWTH | 1 | 40% | 0% | 2 | Search SILICON+GROWTH | Search SILICON+GROWTH |
9 | D LINES | 1 | 33% | 0% | 2 | Search D+LINES | Search D+LINES |
10 | A SIH MU C SIH TANDEM SOLAR CELLS | 1 | 50% | 0% | 1 | Search A+SIH+MU+C+SIH+TANDEM+SOLAR+CELLS | Search A+SIH+MU+C+SIH+TANDEM+SOLAR+CELLS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | PLASTICALLY DEFORMED SILICON | 23 | 45% | 6% | 39 |
2 | DISLOCATION RELATED LUMINESCENCE | 5 | 60% | 1% | 6 |
3 | DISLOCATION RELATED PHOTOLUMINESCENCE | 5 | 47% | 1% | 8 |
4 | EXTENDED STRUCTURAL DEFECTS | 4 | 75% | 0% | 3 |
5 | DIPOLE SPIN RESONANCE | 3 | 57% | 1% | 4 |
6 | STABLE SPECTRAL CHARACTERISTICS | 3 | 100% | 0% | 3 |
7 | N DOPED SILICON | 2 | 67% | 0% | 2 |
8 | DISLOCATION LUMINESCENCE | 2 | 43% | 0% | 3 |
9 | EDGE ELECTROLUMINESCENCE | 1 | 100% | 0% | 2 |
10 | SI1 XGEX SI100 | 1 | 100% | 0% | 2 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials | 2009 | 32 | 70 | 31% |
Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence | 2010 | 5 | 63 | 56% |
CHARGED DISLOCATIONS IN SEMICONDUCTORS | 1995 | 7 | 7 | 57% |
THE ELECTRICAL-PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS | 1984 | 14 | 5 | 40% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | JOINT IHP BTU | 1 | 25% | 0.5% | 3 |
2 | IHP | 1 | 13% | 1.0% | 6 |
3 | LEHRSTUHL INTEGRIERTE SYST | 1 | 33% | 0.3% | 2 |
4 | LIONS DSM IRAMIS NIMBE | 1 | 50% | 0.2% | 1 |
5 | MICROELECT CHEM PROBLEM | 1 | 50% | 0.2% | 1 |
6 | STATE MESOSCOP PHYS PHYS | 1 | 50% | 0.2% | 1 |
7 | BTU JOINT | 1 | 29% | 0.3% | 2 |
8 | IHP BTU JOINT | 0 | 20% | 0.3% | 2 |
9 | EDUC NANOSYST MODERN MAT | 0 | 33% | 0.2% | 1 |
10 | IHP MICROELECT | 0 | 33% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000204521 | ELECTRON BEAM INDUCED CURRENT//ELECTRON BEAM APPLICATION//SEMICONDUCTOR MATERIAL MEASUREMENTS |
2 | 0.0000199967 | HEAVY B DOPING//CONCEPTS DISPOSITIFS PHOTON//UMR 6630 |
3 | 0.0000147666 | OPTIMIZATION OF ANNEALING//ERBIUM RELATED CENTRES//SELF ASSEMBLED SILICON QUANTUM WELLS |
4 | 0.0000146617 | CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD |
5 | 0.0000102032 | METALLURGICAL GRADE SILICON//SOLAR GRADE SILICON//MULTICRYSTALLINE SILICON |
6 | 0.0000085133 | CARL EMILY FUCHS MICROELECT//CEFIM//EUROPEAN QUAL |
7 | 0.0000084764 | GETTERING//GETTERING EFFICIENCY//SI AU |
8 | 0.0000078601 | ERBIUM//ERBIUM DOPED SILICON//ERBIUM IMPLANTATION |
9 | 0.0000071660 | OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON |
10 | 0.0000068200 | STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI |