Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
15299 | 650 | 26.9 | 80% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SIMA | Address | 12 | 45% | 3% | 20 |
2 | HEXAGONAL SURFACES | Author keyword | 8 | 100% | 1% | 5 |
3 | DSMDRECAMSPCSI | Address | 6 | 43% | 2% | 10 |
4 | SIC0001 | Author keyword | 5 | 54% | 1% | 7 |
5 | SIC SURFACES | Author keyword | 4 | 75% | 0% | 3 |
6 | BETA SIC100 SURFACE | Author keyword | 3 | 100% | 0% | 3 |
7 | SILICON CARBIDE SURFACES | Author keyword | 3 | 100% | 0% | 3 |
8 | LEHRSTUHL FESTKORPERPHYS | Address | 2 | 10% | 4% | 23 |
9 | THEORET PHYS FESTKORPERPHYS 2 | Address | 2 | 29% | 1% | 7 |
10 | SPCSISIMA | Address | 2 | 44% | 1% | 4 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HEXAGONAL SURFACES | 8 | 100% | 1% | 5 | Search HEXAGONAL+SURFACES | Search HEXAGONAL+SURFACES |
2 | SIC0001 | 5 | 54% | 1% | 7 | Search SIC0001 | Search SIC0001 |
3 | SIC SURFACES | 4 | 75% | 0% | 3 | Search SIC+SURFACES | Search SIC+SURFACES |
4 | BETA SIC100 SURFACE | 3 | 100% | 0% | 3 | Search BETA+SIC100+SURFACE | Search BETA+SIC100+SURFACE |
5 | SILICON CARBIDE SURFACES | 3 | 100% | 0% | 3 | Search SILICON+CARBIDE+SURFACES | Search SILICON+CARBIDE+SURFACES |
6 | AB INITIO RESULTS | 2 | 67% | 0% | 2 | Search AB+INITIO+RESULTS | Search AB+INITIO+RESULTS |
7 | C RICH RECONSTRUCTED SURFACE | 2 | 67% | 0% | 2 | Search C+RICH+RECONSTRUCTED+SURFACE | Search C+RICH+RECONSTRUCTED+SURFACE |
8 | EPITAXY RELATIONSHIPS | 2 | 67% | 0% | 2 | Search EPITAXY+RELATIONSHIPS | Search EPITAXY+RELATIONSHIPS |
9 | CORE LEVEL PHOTOEMISSION SPECTROSCOPY | 2 | 50% | 0% | 3 | Search CORE+LEVEL+PHOTOEMISSION+SPECTROSCOPY | Search CORE+LEVEL+PHOTOEMISSION+SPECTROSCOPY |
10 | A PLANES | 1 | 100% | 0% | 2 | Search A+PLANES | Search A+PLANES |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | BETA SIC100 SURFACE | 104 | 81% | 10% | 63 |
2 | SIC0001ROOT 3X ROOT 3 SURFACE | 40 | 82% | 4% | 23 |
3 | 6H SIC0001 SURFACES | 36 | 77% | 4% | 24 |
4 | SIC001 SURFACE | 31 | 92% | 2% | 12 |
5 | BETA SIC100 C2X2 | 27 | 83% | 2% | 15 |
6 | ASYMMETRIC DIMER RECONSTRUCTION | 23 | 86% | 2% | 12 |
7 | SIC SURFACES | 23 | 52% | 5% | 32 |
8 | CARBIDE 100 SURFACES | 17 | 100% | 1% | 8 |
9 | SIC0001 SURFACE | 17 | 100% | 1% | 8 |
10 | 3C SIC001 SURFACES | 14 | 100% | 1% | 7 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Passivation of hexagonal SiC surfaces by hydrogen termination | 2004 | 47 | 56 | 77% |
Reconstruction models of cubic SiC surfaces | 2004 | 33 | 109 | 77% |
Electronic properties of SiC surfaces and interfaces: some fundamental and technological aspects | 2006 | 25 | 84 | 55% |
Atomic scale control and understanding of cubic silicon carbide surface reconstructions, nanostructures and nanochemistry | 2004 | 28 | 70 | 76% |
Structure and properties of cubic silicon carbide (100) surfaces: A review | 1997 | 127 | 66 | 70% |
Theoretical studies of silicon carbide surfaces | 2002 | 27 | 112 | 56% |
Functional surface reconstructions of hexagonal SiC | 2004 | 23 | 32 | 75% |
Modifications of cubic SiC surfaces studied by ab initio simulations: from gas adsorption to organic functionalization | 2007 | 10 | 61 | 57% |
Atomic scale study of the chemistry of oxygen, hydrogen and water at SiC surfaces | 2007 | 8 | 58 | 57% |
Electron correlation effects on SiC(111) and SiQ(0001) surfaces | 2004 | 22 | 30 | 53% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SIMA | 12 | 45% | 3.1% | 20 |
2 | DSMDRECAMSPCSI | 6 | 43% | 1.5% | 10 |
3 | LEHRSTUHL FESTKORPERPHYS | 2 | 10% | 3.5% | 23 |
4 | THEORET PHYS FESTKORPERPHYS 2 | 2 | 29% | 1.1% | 7 |
5 | SPCSISIMA | 2 | 44% | 0.6% | 4 |
6 | UMR 7014 | 2 | 25% | 1.2% | 8 |
7 | CEA SNECMA | 2 | 67% | 0.3% | 2 |
8 | SIMA ASSOCIE | 2 | 67% | 0.3% | 2 |
9 | SPCSIDRECAM | 2 | 67% | 0.3% | 2 |
10 | FESTKORPERTHEOR | 2 | 50% | 0.5% | 3 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000215556 | FCT CENT//SURFACE DECOMPOSITION//CENTURY COE PROGRAM NANO TORY 21ST |
2 | 0.0000204208 | OHMIC CONTACT//OHMIC CONTACTS//P TYPE SIC |
3 | 0.0000168306 | 3C SIC//FG NANOTECHNOL//HOLLOW VOID |
4 | 0.0000139336 | MICROPIPE//SUBLIMATION GROWTH//MICROPIPES |
5 | 0.0000124547 | 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS |
6 | 0.0000069697 | TRANSLATIONAL KINETIC ENERGY//POINT DEFECT GENERATION//OXYGEN MOLECULAR BEAM |
7 | 0.0000068828 | HEFEI ADV//CONJUGATED AROMATIC COMPOUND//CLASSICAL MD SIMULATIONS |
8 | 0.0000066219 | DAS STRUCTURE//SN GE111//SI111 7 X 7 |
9 | 0.0000064339 | GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING |
10 | 0.0000062783 | GE001//C4 X 2//C4X2 |