Class information for:
Level 1: DATA RETENTION TIME//VOLTAGE DOWN CONVERTER//FERROELECTRIC MEMORY

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
15174 658 11.6 36%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 DATA RETENTION TIME Author keyword 8 50% 2% 12
2 VOLTAGE DOWN CONVERTER Author keyword 6 80% 1% 4
3 FERROELECTRIC MEMORY Author keyword 4 17% 3% 23
4 EMBEDDED DRAM Author keyword 4 24% 2% 16
5 NEGATIVE WORDLINE Author keyword 4 75% 0% 3
6 DYNAMIC RANDOM ACCESS MEMORY DRAM Author keyword 4 24% 2% 14
7 BIT LINE SENSE AMPLIFIER BLSA Author keyword 3 100% 0% 3
8 LOW POWER DRAM Author keyword 3 100% 0% 3
9 MEMORY CIRCUIT DESIGN Author keyword 3 100% 0% 3
10 OPEN BITLINE Author keyword 3 100% 0% 3

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 DATA RETENTION TIME 8 50% 2% 12 Search DATA+RETENTION+TIME Search DATA+RETENTION+TIME
2 VOLTAGE DOWN CONVERTER 6 80% 1% 4 Search VOLTAGE+DOWN+CONVERTER Search VOLTAGE+DOWN+CONVERTER
3 FERROELECTRIC MEMORY 4 17% 3% 23 Search FERROELECTRIC+MEMORY Search FERROELECTRIC+MEMORY
4 EMBEDDED DRAM 4 24% 2% 16 Search EMBEDDED+DRAM Search EMBEDDED+DRAM
5 NEGATIVE WORDLINE 4 75% 0% 3 Search NEGATIVE+WORDLINE Search NEGATIVE+WORDLINE
6 DYNAMIC RANDOM ACCESS MEMORY DRAM 4 24% 2% 14 Search DYNAMIC+RANDOM+ACCESS+MEMORY+DRAM Search DYNAMIC+RANDOM+ACCESS+MEMORY+DRAM
7 BIT LINE SENSE AMPLIFIER BLSA 3 100% 0% 3 Search BIT+LINE+SENSE+AMPLIFIER+BLSA Search BIT+LINE+SENSE+AMPLIFIER+BLSA
8 LOW POWER DRAM 3 100% 0% 3 Search LOW+POWER+DRAM Search LOW+POWER+DRAM
9 MEMORY CIRCUIT DESIGN 3 100% 0% 3 Search MEMORY+CIRCUIT+DESIGN Search MEMORY+CIRCUIT+DESIGN
10 OPEN BITLINE 3 100% 0% 3 Search OPEN+BITLINE Search OPEN+BITLINE

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 256 MB DRAM 8 75% 1% 6
2 16 MBIT DRAM 6 100% 1% 4
3 64 MB DRAM 5 54% 1% 7
4 1 MBIT 4 75% 0% 3
5 NEGATIVE WORDLINE BIAS 4 75% 0% 3
6 FRAM 4 33% 2% 10
7 CMOS DRAM 3 57% 1% 4
8 DRAM 3 11% 4% 26
9 SYNCHRONOUS DRAM 3 60% 0% 3
10 MEGABIT DRAMS 2 44% 1% 4

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
Chain FeRAMs 2004 0 6 100%
Operation principle and circuit design issues 2004 0 7 43%
SEMICONDUCTOR MEMORY TRENDS 1986 6 5 80%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 SOC DEVICE TEAM 1 2 67% 0.3% 2
2 MEMORY PROD TECHNOL 2 50% 0.5% 3
3 ADV LSI TECHNOL DEV 2 40% 0.6% 4
4 ULSI DEVICE ENGN 2 43% 0.5% 3
5 AS SYST STATE 1 40% 0.3% 2
6 ADV ANALOG DEV 1 50% 0.2% 1
7 COMP ENGN SECT 1 50% 0.2% 1
8 DRAM CORE TECHNOL 1 50% 0.2% 1
9 DRAM DESIGN TEAM 2 1 50% 0.2% 1
10 DRAM DEV GRP 1 50% 0.2% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000162289 SRAM//PROCESS VARIATION//POWER GATING
2 0.0000150177 BACK BIAS EFFECT//VERTICAL MOSFET//SURROUNDING GATE TRANSISTOR
3 0.0000135693 COMPUTER MEMORY SYSTEMS//HIGH DIMENSIONAL PARITY CHECK CODE//PARALLEL DECODING ARCHITECTURE
4 0.0000125317 BUILT IN REDUNDANCY ANALYSIS BIRA//CATASTROPHIC FAULT PATTERNS//CRITICAL AREA
5 0.0000122546 CAPACITORLESS DRAM//1T DRAM//CAPACITORLESS 1T DRAM
6 0.0000098463 CHARGE PUMP//SWITCHED CAPACITOR SC CONVERTER//SWITCHED CAPACITOR SC CONVERTERS
7 0.0000096007 SIDEWALL OXIDATION//COMPUTAT ELECT//MEMORY DEVICE BUSINESS
8 0.0000084658 BEAM CHANNEL TRANSISTOR//IMPURITY ENHANCED OXIDATION//BIPOLAR MODE FIELD EFFECT TRANSISTORS BMFETS
9 0.0000077874 PASSIVATED CONTACT//POLYSILICON EMITTER//CLOCK ACCESS TIME
10 0.0000055398 CODE TRANSFORMATIONS//DUAL RING USAGE//SIMPLIFIED PROTOCOL