Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
15087 | 663 | 18.2 | 49% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
3081 | 1887 | BELOW GAP EXCITATION//CURRENT DENSITY FILAMENT//GUNN EFFECT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | CURRENT DENSITY FILAMENT | Author keyword | 6 | 71% | 1% | 5 |
2 | HIGH FIELD DOMAIN | Author keyword | 5 | 63% | 1% | 5 |
3 | GUNN EFFECT | Author keyword | 4 | 28% | 2% | 11 |
4 | RECOMBINATION INSTABILITY | Author keyword | 3 | 100% | 0% | 3 |
5 | SEMICONDUCTOR BREAKDOWN | Author keyword | 3 | 100% | 0% | 3 |
6 | FIELD ENHANCED TRAPPING | Author keyword | 1 | 100% | 0% | 2 |
7 | GOLD DOPED N GE | Author keyword | 1 | 100% | 0% | 2 |
8 | GUNN OSCILLATION | Author keyword | 1 | 50% | 0% | 2 |
9 | IMPACT IONIZATION AVALANCHE | Author keyword | 1 | 50% | 0% | 2 |
10 | LOW FREQUENCY CURRENT OSCILLATION | Author keyword | 1 | 100% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ULTRAPURE GE | 23 | 100% | 2% | 10 |
2 | P GERMANIUM | 21 | 90% | 1% | 9 |
3 | BREATHING CURRENT FILAMENTS | 20 | 100% | 1% | 9 |
4 | TEMPERATURE IMPURITY BREAKDOWN | 20 | 100% | 1% | 9 |
5 | CHAOTIC FLUCTUATIONS | 17 | 100% | 1% | 8 |
6 | DRIVEN CURRENT FILAMENT | 11 | 100% | 1% | 6 |
7 | EXTRINSIC GE | 9 | 83% | 1% | 5 |
8 | IMPURITY BREAKDOWN | 9 | 67% | 1% | 8 |
9 | LOCALIZED CURRENT FILAMENTS | 8 | 70% | 1% | 7 |
10 | EXTRINSIC SEMICONDUCTORS | 8 | 60% | 1% | 9 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Slow domains in semi-insulating GaAs | 2001 | 48 | 69 | 39% |
RECOMBINATION AND IONIZATION PROCESSES AT IMPURITY CENTERS IN HOT-ELECTRON SEMICONDUCTOR TRANSPORT | 1989 | 24 | 36 | 33% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | PHYS DIELECT SEMICOND | 1 | 50% | 0.2% | 1 |
2 | PHYS LEHRSTUHL EXPT PHYS 2 | 1 | 50% | 0.2% | 1 |
3 | TELECOMM SYST | 1 | 50% | 0.2% | 1 |
4 | IPN UNIDAD QUERETARO | 0 | 33% | 0.2% | 1 |
5 | COMMUN PROD | 0 | 25% | 0.2% | 1 |
6 | UNIDAD ASOCIADA CIENCIA MAT | 0 | 25% | 0.2% | 1 |
7 | PHOENIX CORP | 0 | 17% | 0.2% | 1 |
8 | COLEGIO TECN AGRICOLA ILDEFONSO BASTOS BORGES | 0 | 100% | 0.2% | 1 |
9 | ENGN ELECT ENGN NADA KU | 0 | 100% | 0.2% | 1 |
10 | EXPTL MED 4 | 0 | 100% | 0.2% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000209943 | DENSITY OF IRRIGATION//MOL CRYST PHYS//WAVES OSCILLATIONS AND INSTABILITIES IN PLASMA |
2 | 0.0000147994 | BELOW GAP EXCITATION//NONRADIATIVE RECOMBINATION//BELOW GAP STATES |
3 | 0.0000133400 | NON EQUILIBRIUM ELECTRONS//DEVICE MODELLING//ENGN STATE |
4 | 0.0000103908 | DRAIN CURRENT TRANSIENT//FUNCT ELEMENTS CONTROL SYST//GATE LAG |
5 | 0.0000071015 | N CDS//ACOUSTIC DOMAIN//BRILLOUIN SCATTERING METHOD |
6 | 0.0000067240 | A STATES//GRP PHOTOELECT THEOR//COMPENSATED SEMICONDUCTORS |
7 | 0.0000064778 | GERMANIUM DOPED WITH GALLIUM//ISO SPACECRAFT//EXTRINSIC SEMICONDUCTOR |
8 | 0.0000062464 | DIELECTRIC BARRIER DISCHARGE//DIELECTRIC BARRIER DISCHARGE DBD//ATMOSPHERIC PRESSURE GLOW PLASMA |
9 | 0.0000061364 | TYPE II INTERMITTENCY//CIRCLE DIFFEOMORPHISM//CIRCLE HOMEOMORPHISM |
10 | 0.0000060413 | PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES PCSSS//PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES//ULTRAFAST PHOTOELECT TECHNOL |